TFT array substrate structure based on OLED

Patent metadata

Field	Value
Publication number	US-10163998-B2
Application number	US-201415524071-A
Country	US
Kind code	B2
Filing date	Nov 14, 2014
Priority date	Nov 14, 2014
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A thin film transistor (TFT) array substrate structure based on organic light-emitting diodes (OLEDs) may include multiple sets of TFT components, capacitors, common electrodes, and data signal lines, all of which are formed on a substrate. Each set of TFT components includes a driving TFT, and the driving TFT has a gate, a source, and a drain. A drain frame extends from the drain and surrounds a pixel block of the TFT array substrate structure, and a transparent conductive film is arranged in a region surrounded by the drain frame and is in contact with the drain frame.

First claim

What is claimed is:

1. A thin film transistor (TFT) array substrate structure based on organic light-emitting diodes (OLEDs), comprising:
a plurality of sets of TFT components;
capacitors;
common electrodes; and
data signal lines, wherein the plurality of sets of the TFT components, the capacitors, the common electrodes, and the data signal lines are formed on a substrate, each of the plurality of sets of the TFT components comprises a driving TFT, and the driving TFT comprises a gate, a source, and a drain;
wherein a drain frame extends from the drain and surrounds a pixel block of the TFT array substrate structure; and a transparent conductive film is arranged in a region surrounded by the drain frame and is in contact with the drain frame;
wherein each of the plurality of sets of the TFT components further comprises a switch TFT, the switch TFT comprises a gate, a source, and a drain, the source of the switch TFT is coupled to the data signal line, and the drain of the switch TFT is coupled to the gate of the driving TFT; and
wherein the capacitor comprises a first sheet electrode and a second sheet electrode that are disposed opposite to each other and in parallel, the gate of the switch TFT, the gate of the driving TFT, the common electrode, and the first sheet electrode are arranged in a first layer on a surface of the substrate, the source and the drain of the switch TFT, the source and the drain of the driving TFT, the data signal line, and the second sheet electrode are arranged in a second layer, and separated from the first layer by an insulation layer.

2. The TFT array substrate structure of claim 1 , wherein the data signal line is coupled to the source of the switch TFT to form an integral whole.

3. The TFT array substrate structure of claim 1 , wherein the common electrode is coupled to the first sheet electrode to form an integral whole, and the drain of the switch TFT is coupled to the second sheet electrode to form an integral whole.

4. A thin film transistor (TFT) array substrate based on organic light-emitting diodes (OLEDs), comprising:
a plurality of driving TFTs, wherein each of the plurality of the driving TFTs comprises a gate, a source, and a drain, and a drain frame extends from the drain; and
a transparent conductive film, wherein the transparent conductive film is arranged in a region surrounded by the drain frame and is in contact with the drain frame, the drain frame and the transparent conductive film form a pixel electrode;
wherein the transparent conductive film has a thickness within a range from 10 nm to 300 nm.

5. A thin film transistor (TFT) array substrate based on organic light-emitting diodes (OLEDs), comprising:
a plurality of driving TFTs, wherein each of the plurality of the driving TFTs comprises a gate, a source, and a drain, and a drain frame extends from the drain; and
a transparent conductive film, wherein the transparent conductive film is arranged in a region surrounded by the drain frame and is in contact with the drain frame, the drain frame and the transparent conductive film form a pixel electrode;
wherein the drain frame has a width within a range from 1 μm to 30 μm.

Assignees

• Shenzhen Royole Technologies Co Ltd
• Shenzhen Royole Technologies Co Ltd

Inventors

• Zhao Jigang
• Wei Peng
• Yu Xiaojun

Classifications

• H01L51/5221

  Electricity · mapped topic

• H01L27/3279

  Electricity · mapped topic

• H01L29/41733

  Electricity · mapped topic

• H01L27/3276

  Electricity · mapped topic

• H01L51/5212

  Electricity · mapped topic