Semiconductor device

Patent metadata

Field	Value
Publication number	US-10163890-B2
Application number	US-201815868527-A
Country	US
Kind code	B2
Filing date	Jan 11, 2018
Priority date	Feb 23, 2017
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A semiconductor device provided herein includes: a semiconductor substrate; an upper main electrode located above the semiconductor substrate; a sense anode electrode located above the semiconductor substrate; a first resistance layer located above the semiconductor substrate, having resistivity higher than resistivities of the upper main electrode and the sense anode electrode, and connecting the upper main electrode and the sense anode electrode; and a lower main electrode located below the semiconductor substrate. The semiconductor substrate includes a switching element and a sense diode. The switching element is connected between the upper main electrode and the lower main electrode. The sense diode includes a p-type first anode region connected to the sense anode electrode and an n-type first cathode region connected to the lower main electrode.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a semiconductor substrate;
an upper main electrode located above the semiconductor substrate;
a sense anode electrode located above the semiconductor substrate;
a first resistance layer located above the semiconductor substrate, having resistivity higher than resistivities of the upper main electrode and the sense anode electrode, and connecting the upper main electrode and the sense anode electrode; and
a lower main electrode located below the semiconductor substrate,
wherein
the semiconductor substrate comprises a switching element and a sense diode,
the switching element is connected between the upper main electrode and the lower main electrode, and
the sense diode comprises a p-type first anode region connected to the sense anode electrode and an n-type first cathode region connected to the lower main electrode.

2. The semiconductor device of claim 1 , wherein
the switching element comprises a p-type body region connected to the upper main electrode,
the semiconductor substrate comprises an n-type separation region separating the body region from the first anode region, and
the resistivity of the first resistance layer is lower than resistivity of the separation region.

3. The semiconductor device of claim 1 , wherein the first resistance layer covers a part of an upper surface of the upper main electrode and a part of an upper surface of the sense anode electrode.

4. The semiconductor device of claim 1 , wherein
the upper main electrode covers a part of an upper surface of the first resistance layer, and
the sense anode electrode covers a part of the upper surface of the first resistance layer.

5. The semiconductor device of claim 1 , wherein the first resistance layer is constituted of polysilicon.

6. The semiconductor device of claim 1 , further comprising a second resistance layer located above the semiconductor substrate and having resistivity higher than the resistivity of the sense anode electrode,
wherein the first anode region is connected to the sense anode electrode via the second resistance layer.

7. The semiconductor device of claim 6 , wherein
the sense anode electrode comprises a bonding pad configured so that a wire is bonded to the bonding pad,
the second resistance layer comprises a first portion connected to the sense anode electrode under the bonding pad and a second portion extending outward from the bonding pad, and
the first anode region is not located under the bonding pad, and is connected to the sense anode electrode via the second portion.

8. The semiconductor device of claim 7 , wherein the second resistance layer is constituted of polysilicon.

9. The semiconductor device of claim 6 , further comprising a wiring layer located above the semiconductor substrate, being in contact with the first anode region, and having resistivity lower than the resistivity of the second resistance layer,
wherein the first anode region is connected to the second resistance layer via the wiring layer.

10. The semiconductor device of claim 6 , wherein the first anode region is in contact with the second resistance layer.

11. The semiconductor device of claim 10 , wherein the second resistance layer is constituted of polysilicon.

12. The semiconductor device of claim 6 , wherein
the semiconductor substrate comprises an n-type drift region located between the first anode region and the first cathode region and having an n-type impurity concentration lower than an n-type impurity concentration of the first cathode region, and
the resistivity of the second resistance layer is higher than resistivity of the drift region.

13. The semiconductor device of claim 1 , wherein
the semiconductor substrate further comprises a freewheel diode, and
the freewheel diode comprises a p-type second anode region connected to the upper main electrode and n-type second cathode region connected to the lower main electrode.

Assignees

• Toyota Motor Co Ltd

Inventors

• Senoo Masaru
• Miyata Masanori

Classifications

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/59

  Bond pads specially adapted therefor · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/923

  Bond pads having multiple stacked layers · CPC title

• H10W72/50

  Bond wires · CPC title