Alignment pattern for package singulation

Patent metadata

Field	Value
Publication number	US-10163807-B2
Application number	US-201715640975-A
Country	US
Kind code	B2
Filing date	Jul 3, 2017
Priority date	Nov 29, 2016
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A method includes forming an alignment pattern over an insulating layer formed over a carrier. A die is mounted over the carrier and encapsulated. Connectors are formed and the structure is attached to a debond tape. The carrier is removed. A cutting device is aligned to a backside of the insulating layer using the alignment pattern. The first insulating layer and encapsulant are cut from the backside of the insulating layer. Another method includes scanning a backside of a packages structure for an alignment pattern in a first package area of the packages structure. A cutting device is aligned to a cut-line in a non-package area of the packages structure based on the alignment pattern and packages are singulated. An InFO package includes an insulating layer on the backside, the insulating layer having a laser marking thereon. The InFO package also includes an alignment pattern proximate to the insulating layer.

First claim

What is claimed is:

1. A method, comprising:
forming a first insulating layer over a front side of a carrier;
forming an alignment pattern proximate a front side of the first insulating layer, the alignment pattern disposed in a corner of a design area of a package, wherein the design area is interposed between two parallel adjacent dicing lanes;
forming a seal ring around the design area, the seal ring being laterally separated from the alignment pattern;
mounting a die over the front side of the first insulating layer;
encapsulating the die with an encapsulant;
forming connectors over the die, the connectors coupled to die connectors;
attaching a dicing tape to the connectors;
removing the carrier;
aligning a cutting device to a backside of the first insulating layer using the alignment pattern; and
cutting the first insulating layer and the encapsulant from the backside of the first insulating layer.

2. The method of claim 1 , further comprising:
forming a conductive feature over the front side of the carrier, wherein a distance between the conductive feature and the alignment pattern is less than about 30 μm.

3. The method of claim 1 , wherein the alignment pattern is embedded in the first insulating layer.

4. The method of claim 1 , wherein the encapsulant extends along sidewalls of the alignment pattern.

5. The method of claim 1 , further comprising:
prior to forming the connectors, forming a redistribution structure over the die and the encapsulant, wherein the connectors are disposed over the redistribution structure.

6. The method of claim 1 , wherein the alignment pattern has a width less than about 40 μm in at least the x-direction or the y-direction in plan view.

7. The method of claim 1 , further comprising forming an informational mark with a laser on a back side of the first insulating layer.

8. A method, comprising:
attaching a first side of a packages structure to a dicing tape by connectors disposed on the first side of the packages structure;
scanning a second side of the packages structure for an alignment pattern;
detecting the alignment pattern in a first package area of the packages structure, the first package area comprising an embedded die and a redistribution structure disposed between the embedded die and the connectors, the alignment pattern overlapping a metal feature of the redistribution structure;
aligning a cutting device to a cut-line in a non-package area of the packages structure based on a predetermined distance from the alignment pattern; and
singulating one or more packages from the packages structure, wherein a first package of the one or more packages includes the first package area and the alignment pattern.

9. The method of claim 8 , further comprising:
prior to singulating the one or more packages, scribing the backside of the packages structure with an initial cut.

10. The method of claim 8 , wherein the alignment pattern is less than about 30 μm in plan view from any visible conductive feature.

11. The method of claim 8 , wherein the alignment pattern has a dimension less than about 40 μm in at least one direction in plan view.

12. The method of claim 8 , wherein the alignment pattern has a shape of a cross, el, diamond, bulls-eye, or box, in plan view.

13. A integrated fan-out (InFO) package comprising:
a first insulating layer having a first laser marking;
an alignment pattern proximate to a front side of the first insulating layer;
an encapsulated die over the front side of the first insulating layer and encapsulated by an encapsulant;
a redistribution structure over the die, the redistribution structure including a metal feature, wherein the alignment pattern overlaps with the metal feature of the redistribution structure, and wherein the encapsulant is interposed between the alignment pattern and the redistribution structure; and
a plurality of connectors disposed over the redistribution structure on a top of the package, a first connector of the plurality of connectors being electrically coupled to the encapsulated die.

14. The InFO package of claim 13 , wherein the alignment pattern is embedded in the first insulating layer.

15. The InFO package of claim 13 , wherein the alignment pattern is embedded in the encapsulant of the encapsulated die.

16. The InFO package of claim 13 , further comprising:
a conductive trace in a same layer as the alignment pattern, the conductive trace electrically coupled to a second connector of the plurality of connectors.

17. The InFO package of claim 16 , further comprising a via extending through the encapsulant, the via electrically coupling the redistribution structure to the conductive trace.

18. The InFO package of claim 13 , further comprising:
a seal ring around a periphery of the package, wherein the alignment pattern is within the seal ring.

19. The InFO package of claim 13 , wherein the alignment pattern is laterally separated from the die.

20. The InFO package of claim 13 , further comprising:
a plurality of conductive features adjacent to the alignment pattern, wherein the alignment pattern is at least about 30 μm laterally from each of the plurality of conductive features, and wherein the alignment pattern is at least about 40 μm in a horizontal dimension and at least about 40 μm in a vertical dimension in top down view.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Ying-Ju
• Yeh Der-Chyang
• Chen Hsien-Wei
• Tai Shih-Peng

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W70/099

  Connecting interconnections to insulating or insulated package substrates, interposers or redistribution layers · CPC title

• H10W72/073

  of die-attach connectors · CPC title

• H10W72/874

  On different surfaces · CPC title

• H10W72/9413

  on encapsulations · CPC title