Low vapor pressure aerosol-assisted CVD

Patent metadata

Field	Value
Publication number	US-10163629-B2
Application number	US-201615045081-A
Country	US
Kind code	B2
Filing date	Feb 16, 2016
Priority date	Nov 16, 2015
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

Systems and methods for processing films on the surface of a substrate are described. The systems possess aerosol generators which form droplets from a condensed matter (liquid or solid) of one or more precursors. A carrier gas is flowed through the condensed matter and push the droplets toward a substrate placed in a substrate processing region. An inline pump connected with the aerosol generator can also be used to push the droplets towards the substrate. A direct current (DC) electric field is applied between two conducting plates configured to pass the droplets in-between. The size of the droplets is desirably reduced by application of the DC electric field. After passing through the DC electric field, the droplets pass into the substrate processing region and chemically react with the substrate to deposit or etch films.

First claim

The invention claimed is:

1. A method of forming a layer on a substrate, the method comprising:
placing the substrate into a substrate processing region of a substrate processing chamber;
placing a liquid precursor into an aerosol generator;
flowing a carrier gas into the aerosol generator to produce aerosol droplets;
passing the aerosol droplets downward through perforations in a top electrode, through an electric field beneath the top electrode, and then towards perforations in a bottom electrode, wherein the aerosol droplets are uncharged;
applying the electric field to the aerosol droplets by applying a voltage between the top electrode and the bottom electrode;
flowing the aerosol droplets through perforations in the bottom electrode into the substrate processing region; and
forming the layer on the substrate from the aerosol droplets.

2. The method of claim 1 , wherein the layer is a self-assembled monolayer (SAM).

3. The method of claim 2 , the self-assembled monolayer is selectively formed on exposed copper portions of the substrate but not on exposed dielectric portions of the substrate and the method further comprises forming a selectively deposited dielectric on the exposed dielectric portions but not on the exposed copper portions which are blocked by the self-assembled monolayer.

4. The method of claim 3 , wherein the selectively deposited dielectric is one of silicon oxide, hafnium oxide, zirconium oxide, titanium oxide or titanium-doped silicon oxide.

5. The method of claim 1 , wherein the liquid precursor includes one or more of octylphosphonic acid (CH 3 (CH 2 ) 6 CH 2 —P(O)(OH) 2 ), perfluorooctylphosphonic acid (CF 3 (CF 2 ) 5 CH 2 —CH 2 —P(O)(OH) 2 ), octadecylphosphonic acid (CH 3 (CH 2 ) 16 CH 2 —P(O)(OH) 2 ), decyl phosphonic acid, mesityl phosphonic acid, cyclohexyl phosphonic acid, hexyl phosphonic acid or butyl phosphonic acid.

6. The method of claim 1 , wherein the layer is one of a II-VI or a III-V semiconductor.

7. The method of claim 1 , wherein the layer is one of boron nitride, aluminum nitride, gallium arsenide, gallium phosphide, indium arsenide or indium antimonide.

8. The method of claim 1 , wherein the layer is a metal-oxide.

9. The method of claim 1 , wherein the layer consists of oxygen and a metal element.

10. The method of claim 1 wherein the electric field is a DC electric field having an electric field which points towards the substrate.

11. The method of claim 1 , further comprising flowing a second precursor into the substrate processing region to form a monolayer on the layer.

12. A method of processing a layer on a substrate, the method comprising:
placing the substrate into a substrate processing region of a substrate processing chamber;
dissolving a solid precursor into a solvent to form a precursor solution within an aerosol generator;
flowing a carrier gas into the aerosol generator to produce aerosol droplets;
passing the aerosol droplets downward through perforations in a top electrode, through an electric field beneath the top electrode, and then towards perforations in a bottom electrode, wherein the aerosol droplets are uncharged;
applying the electric field to the aerosol droplets by applying a voltage between the top electrode and the bottom electrode;
flowing the aerosol droplets through perforations in the bottom electrode into the substrate processing region; and
etching the layer on the substrate by chemical reaction with the aerosol droplets.

13. The method of claim 12 , wherein the layer consists of two elements.

14. The method of claim 12 , further comprising flowing a second precursor into the substrate processing region to remove one monolayer from the layer.

15. The method of claim 12 , wherein the electric field is a DC electric field having an electric field which points towards the substrate.

16. The method of claim 12 , wherein the electric field has a magnitude between 500 V/cm and 20,000 V/cm.

17. The method of claim 12 , wherein the aerosol droplets have a diameter between 3 nm and 75 nm.

Assignees

• Applied Materials Inc

Inventors

• Arnepalli Ranga Rao
• Bagul Nilesh Chimanrao
• Goradia Prerna Sonthalia
• Visser Robert Jan

Classifications

• H10P14/3402

  characterised by the chemical composition · CPC title

• H10P95/70

  Chemical treatments · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P50/246

  of Group III-V materials · CPC title

• H10P50/20

  Dry etching; Plasma etching; Reactive-ion etching · CPC title