Ion beam system

US10163602B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10163602-B2
Application numberUS-201715635500-A
CountryUS
Kind codeB2
Filing dateJun 28, 2017
Priority dateJul 5, 2016
Publication dateDec 25, 2018
Grant dateDec 25, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder. The cold transfer member has its surface covered with a heat insulating material in order to prevent the gas condensation.

First claim

Opening claim text (preview).

What is claimed is: 1. An ion beam system comprising: a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder, wherein a heat insulating material covers an outer surface of the cold transfer member in order to prevent condensation of the gas. 2. The ion beam system according to claim 1 , wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof. 3. The ion beam system according to claim 1 , wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics. 4. The ion beam system according to claim 1 , wherein the gas is a gas containing any one of neon, argon, krypton and xenon. 5. The ion beam system according to claim 1 , wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen. 6. The ion beam system according to claim 1 , wherein the gas supply portion supplies a gas mixture of krypton gas and other gas or supplies the krypton gas and the other gas by switching between these gases, and the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 60K. 7. The ion beam system according to claim 1 , wherein the gas supply portion supplies a gas mixture of argon gas and helium gas or a gas mixture of argon gas and hydrogen gas, and the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 45K. 8. An ion beam system comprising: a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder, the system further comprising: an adhesion member covering an outer surface of the cold transfer member; and a heat insulating material adhered to the outer surface of the cold transfer member via the adhesion member, and covering the adhesion member. 9. The ion beam system according to claim 8 , wherein the cold transfer member is a metal thin film or a braided metal wire and has a heat insulating layer adhered to the surface thereof. 10. The ion beam system according to claim 8 , wherein the cold transfer member comprises a metal and the heat insulating material comprises a fluorine resin or ceramics. 11. The ion beam system according to claim 8 , wherein the gas is a gas containing any one of neon, argon, krypton and xenon. 12. The ion beam system according to claim 8 , wherein the gas is a gas containing any one of carbon monoxide, oxygen and nitrogen. 13. The ion beam system according to claim 8 , wherein the gas supply portion supplies a gas mixture of krypton gas and other gas or supplies the krypton gas and the other gas by switching between these gases, and the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 60K. 14. The ion beam system according to claim 8 , wherein the gas supply portion supplies a gas mixture of argon gas and helium gas or a gas mixture of argon gas and hydrogen gas, and the emitter tip is maintained at a substantially constant temperature higher than the condensation temperatures of the gases and equal to or less than 45K. 15. An ion beam system comprising: a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode opposed to the emitter tip; a gas supply portion for supplying a gas to the emitter tip; and a cold transfer member disposed in the vacuum vessel and transferring cold energy to the emitter tip holder, the system further comprising: a heat insulating material covering an outer surface of the cold transfer member; a metal material covering an outer surface of the heat insulating material; and a heating mechanism for heating the metal material.

Assignees

Inventors

Classifications

  • with scanning beams {(H01J37/268, H01J37/292, H01J37/2955 take precedence)} · CPC title

  • Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube · CPC title

  • Gas field ion sources [GFIS] · CPC title

  • Vacuum locks {; Means for obtaining or maintaining the desired pressure within the vessel} · CPC title

  • Details · CPC title

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Frequently asked questions

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What does patent US10163602B2 cover?
Provided is an ion beam system including a gas field ionization ion source which can obtain a high current sufficient for processing and stabilize an ion beam current. The ion beam system includes a gas field ionization ion source which includes: a vacuum vessel; an emitter tip holder disposed in the vacuum vessel; an emitter tip connected to the emitter tip holder; an extraction electrode oppo…
Who is the assignee on this patent?
Hitachi High Tech Science Corp
What technology area does this patent fall under?
Primary CPC classification H01J37/08. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).