OLED device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-10163580-B2
Application number	US-201715574333-A
Country	US
Kind code	B2
Filing date	Jun 22, 2017
Priority date	May 8, 2017
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

An OLED device and a method for manufacturing the OLED device are provided. The OLED device includes a substrate, a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode layer, which are sequentially disposed on the substrate. The photoactive layer includes an exciton control layer and an active material layer, the active material layer includes a perovskite material and a small molecule luminescent material, and a doping molar ratio of the small molecular luminescent material ranges from 0.1% to 15%.

First claim

What is claimed is:

1. An organic light emitting diode (OLED) device, comprising:
a substrate, a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode layer, which are sequentially disposed on the substrate;
wherein the photoactive layer includes an exciton control layer and an active material layer, the active material layer includes a perovskite material and a small molecule luminescent material, and a doping molar ratio of the small molecular luminescent material ranges from 0.1% to 15%;
wherein the perovskite material is a material of Formula I: ABX 3
wherein A is an organic ammonium group, B is a Group IV metal or a transition metal, and X is a halogen element or a combination of a plurality of halogen elements; and
wherein the small molecule luminescent material is a fluorescent material or a phosphorescent material.

2. The OLED device as claimed in claim 1 , wherein a material of the exciton control layer is an electron transport type material, an energy level of the electron transport type material is between an energy level of a material of the electron transport layer and an energy level of a material of the active material layer, and the exciton control layer is located between the electron transport layer and the active material layer.

3. The OLED device as claimed claim 1 , wherein a material of the exciton control layer is a hole transport type material, an energy level of the hole transport type material is between an energy level of a material of the hole transport layer and an energy level of a material of the active material layer, and the exciton control layer is located between the hole transport layer and the active material layer.

4. An organic light emitting diode (OLED) device, comprising:
a substrate, a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode layer, which are sequentially disposed on the substrate;
wherein the photoactive layer includes an exciton control layer and an active material layer, the active material layer includes a perovskite material and a small molecule luminescent material, and a doping molar ratio of the small molecular luminescent material ranges from 0.1% to 15%.

5. The OLED device as claimed in claim 4 , wherein a material of the exciton control layer is an electron transport type material, an energy level of the electron transport type material is between an energy level of a material of the electron transport layer and an energy level of a material of the active material layer, and the exciton control layer is located between the electron transport layer and the active material layer.

6. The OLED device as claimed claim 4 , wherein a material of the exciton control layer is a hole transport type material, an energy level of the hole transport type material is between an energy level of a material of the hole transport layer and an energy level of a material of the active material layer, and the exciton control layer is located between the hole transport layer and the active material layer.

7. The OLED device as claimed claim 4 , wherein the perovskite material is a material of Formula I: ABX 3
wherein A is an organic ammonium group, B is a Group IV metal or a transition metal, and X is a halogen element or a combination of a plurality of halogen elements.

8. The OLED device as claimed claim 4 , wherein the small molecule luminescent material is a fluorescent material or a phosphorescent material.

9. A method for manufacturing an organic light emitting diode (OLED) device comprising steps of:
providing a substrate;
forming a first electrode layer, an electron injection layer, an electron transport layer, a photoactive layer, a hole transport layer, and a second electrode layer sequentially on the substrate;
wherein the photoactive layer includes an exciton control layer and an active material layer, the active material layer includes a perovskite material and a small molecule luminescent material, and a doping molar ratio of the small molecular luminescent material ranges from 0.1% to 15%.

10. The method for manufacturing the OLED device as claimed in claim 9 , wherein when a material of the exciton control layer is an electron transport type material, an energy level of the electron transport type material is between an energy level of a material of the electron transport layer and an energy level of a material of the active material layer, and the step of forming the photoactive layer includes following steps of:
forming the exiton control layer on the electron transport layer; and
forming the active material layer on the exiton control layer.

11. The method for manufacturing the OLED device as claimed in claim 9 , wherein when a material of the exciton control layer is a hole transport type material, an energy level of the hole transport type material is between an energy level of a material of the hole transport layer and an energy level of a material of the active material layer, and the step of forming the photoactive layer includes steps of:
forming the active material layer on the electron transport layer; and
forming the exiton control layer on the active material layer.

12. The method for manufacturing the OLED device as claimed in claim 9 , wherein the perovskite material is a material of Formula I: ABX 3
wherein A is an organic ammonium group, B is a Group IV metal or a transition metal, and X is a halogen element or a combination of a plurality of halogen elements.

13. The method for manufacturing the OLED device as claimed in claim 9 , wherein the small molecule luminescent material is a fluorescent material or a phosphorescent material.

Assignees

• Wuhan China Star Optoelectronics Technology Co Ltd

Inventors

• Wang Xu

Classifications

• H01L51/0072

  Electricity · mapped topic

• H01L51/5004

  Electricity · mapped topic

• H01L51/5012

  Electricity · mapped topic

• H01L51/0059

  Electricity · mapped topic

• H01G9/2059

  comprising an organic dye as the active light absorbing material, e.g. adsorbed on an electrode or dissolved in solution · CPC title