Method for manufacturing mirrors with semiconductor saturable absorber

Patent metadata

Field	Value
Publication number	US-10162246-B2
Application number	US-201515112567-A
Country	US
Kind code	B2
Filing date	Jan 19, 2015
Priority date	Jan 20, 2014
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

The invention relates to a method for manufacturing mirrors with saturable semiconducting absorptive material, which includes: depositing a saturable semiconducting absorptive material ( 205 ) onto a growth substrate ( 200 ) in order to form a structure; depositing at least one metal layer onto the structure such as to form a first mirror ( 211 ); and depositing a heat-conductive substrate ( 212 ) onto the metal layer by electrodeposition through an electrically insulating mask ( 312 ), allowing the selective deposition of the thermally conductive substrate, in order to predefine the perimeter of the mirrors with saturable semiconducting absorptive material.

First claim

The invention claimed is:

1. A method for manufacturing mirrors with semiconductor saturable absorber comprising:
the deposition onto a substrate for growth of a semiconductor saturable absorptive material so as to form a structure;
the deposition of at least one metal layer onto the structure in order to form a first mirror;
the deposition by electro-deposition through an electrically-insulating mask of a thermally-conductive substrate onto the metal layer, allowing the selective deposition of the thermally-conductive substrate, in order for the mask to predefine the perimeter of the mirrors with semiconductor saturable absorber.

2. The method as claimed in claim 1 , comprising a step for introduction of crystal defects into the semiconductor saturable absorptive material in order to limit the lifetime of the carriers in the semiconductor saturable absorptive material to 100 ps.

3. The method as claimed in claim 2 , wherein the step for introduction of crystal defects comprises a step for ion irradiation in the saturable absorptive material.

4. The method as claimed in claim 1 , wherein the first mirror is used as a cathode for the electro-deposition.

5. The method as claimed in claim 1 , wherein the electrically-insulating mask has structure-forming patterns comprising insulating regions and open areas, in order to predefine the perimeter of the mirrors with semiconductor saturable absorber.

6. The method as claimed in claim 1 , further comprising a step for deposition of a second mirror onto the saturable absorptive material.

7. The method as claimed in claim 6 , further comprising a step for deposition of a first phase layer between the first mirror and the saturable absorptive material and a step for deposition of a second phase layer between the second mirror and the saturable absorptive material.

8. The method as claimed in claim 1 , further comprising a step for separation of the mirrors with semiconductor saturable absorber predefined by the mask.

Assignees

• Centre National De La Rech Scientifique—Cnrs

Inventors

• Oudar Jean-Louis
• Bouchoule Sophie

Classifications

• G02F2202/102

  In×P and alloy · CPC title

• H01S3/0405

  Conductive cooling, e.g. by heat sinks or thermo-electric elements · CPC title

• H01S3/113

  using intracavity saturable absorbers · CPC title

• G02F1/3556 Primary

  Semiconductor materials, e.g. quantum wells · CPC title

• G02F2202/101

  Ga×As and alloy · CPC title