Masked cation exchange lithography

Patent metadata

Field	Value
Publication number	US-10160906-B2
Application number	US-201514630645-A
Country	US
Kind code	B2
Filing date	Feb 24, 2015
Priority date	Feb 24, 2015
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

We describe a method for patterning of colloidal nanocrystals films that combines a high energy beam treatment with a step of cation exchange. The high energy irradiation causes cross-linking of the ligand molecules present at the nanocrystal surface, and the cross-linked molecules act as a mask for the subsequent cation exchange reaction. Consequently, in the following step of cation exchange, the regions that have not been exposed to beam irradiation are chemically transformed, while the exposed ones remain unchanged. This selective protection allows the design of patterns that are formed by chemically different nanocrystals, yet in a homogeneous nanocrystal film.

First claim

We claim:

1. A method for preparing a patterned homogeneous nanocrystal film comprising the steps:
providing a homogeneous film of organic surfactant ligand coated nanocrystals deposited on a solid support, said nanocrystals comprising a first cation;
crosslinking the organic ligand on the surface of the nanocrystals by exposing the film to high energy irradiation beam along a predefined pattern; and
subjecting the so treated film to a cation-exchange reaction with a solution of a chemical species releasing a second cation different from the first cation;

thereby obtaining a homogeneous film of nanocrystals comprising said second cation, with patterns of nanocrystals comprising said first cation.

2. The method according to claim 1 , wherein the nanocrystals comprising the first cation are nanocrystals of a material selected from the group consisting of crystalline metal chalcogenides, oxides, halides, nitrides, or phosphides, and arsenides.

3. The method according to claim 2 , wherein the nanocrystals comprising the first cation are nanocrystals of a material selected from the group consisting of a group III-V semiconductor, a IV-VI semiconductor, a II-VI semiconductor, and one material not comprised in the above groups selected from the group consisting of Cu 2 Se, Cu 2−x Se, Cu 2−x Se 1−y S y , Cu 2 S, Cu 2.86 Te, Ag 2 Se, AgSe, Ag 2 S, Ag 2 Te, CoSe, CoSe 2 , CoS 2 , CoTe 2 , Co 3 Se 4 , Co 9 S 8 , ZnSO 4 , SeS, MnSe, MnSe 2 , MnS, MnSe 2 , MnTe 2 , MnS 1−y Se y , MnSe 1—y Te y , SiC (3C), SiGe, CuIn 1—x Ga x Se 2 , Zn 3 As 2 , Li 3 NbO 4 , La 2 CuO 4 , Ga 4 Se 8 , Ga 1.33 Se 2 , Mn x In 1−x As, CdxMn 1−x Te, Mn 0.4 Pb 3.6 Te 4 , CuIn x Ga 1−x Se 2 , CuInSe 2 , Ag 0.28 Ga 2.56 S 4 , and YF 3 .

4. The method according to claim 1 , wherein the nanocrystals comprising said first cation are selected from the group consisting of group II-VI semiconductors CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, from copper chalcogenides, Cu 2−x S, Cu 2−x Se, and Cu 2−x Te.

5. The method according to claim 1 wherein the organic surfactant ligand coating the nanocrystals surface is selected from the group consisting of alkylphosphines, alkylphosphine-oxides, alkylphosphonic acids, alkylamines, alkylthiols, fatty carboxylic acids or fatty alkanes, arenethiols, fatty alkenes, aromatic compounds, and ethers or mixture thereof.

6. The method according to claim 5 , wherein the organic surfactant ligand is selected from the group consisting of trioctylphosphine (TOP), trioctylphosphine oxide (TOPO), octadecylphosphonic acid (ODPA), hexylphosphonic acid (HPA), oleylamine (OLAM), oleic acid (OLAC) hexadecylamine, 1-dodecanethiol, 1-hexadecane thiol, cathecol, oleic acid (OLAC), stearic acid, and arenethiolates.

7. The method according to claim 1 , wherein the high energy irradiation is an electron-beam or an X-ray beam or a UV or deep-UV light source.

8. The method according to claim 1 , wherein said second cation is selected from the group consisting of elements belonging to group III, group IV, and the transition metal group of the periodic system.

9. The method according to claim 8 , wherein said second cation is selected from the group consisting of cationic forms of Cu, Ag, Co, Zn, Se, Mn, Si, Li, La, Cd, Ga, Pb, and Y.

10. The method according to claim 1 further comprising preparing the homogeneous film of nanocrystals, said preparing comprising the step of depositing colloidal nanocrystals on a solid support through spin coating deposition, layer-by-layer deposition, solvent evaporation, Langmuir-Blodgett, capillary-jet deposition, ink-jet printing, dip-pen lithography, drop-casting, doctor-blading, or nanocrystal film self-assembly at liquid subphases.

Assignees

• Fondazione St Italiano Tecnologia

Inventors

• Krahne Roman
• Miszta Karol
• Toma Andrea
• Greullet Fanny
• Marras Sergio
• Prato Mirko
• Arciniegas Milena
• Manna Liberato

Classifications

• C09K11/881 Primary

  Chalcogenides · CPC title

• G03F7/265

  Selective reaction with inorganic or organometallic reagents after image-wise exposure, e.g. silylation · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• G03F7/038

  Macromolecular compounds which are rendered insoluble or differentially wettable (G03F7/075 takes precedence; macromolecular azides G03F7/012; macromolecular diazonium compounds G03F7/021) · CPC title

• G03F7/0047

  characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing · CPC title