Vanadium oxide for infrared coatings and methods thereof

US10160660B1 · US · B1

Patent metadata
FieldValue
Publication numberUS-10160660-B1
Application numberUS-201514723334-A
CountryUS
Kind codeB1
Filing dateMay 27, 2015
Priority dateMay 28, 2014
Publication dateDec 25, 2018
Grant dateDec 25, 2018

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  1. Title

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention relates to vanadium oxide and methods of controlling reaction processes for making such materials (e.g., powders). In particular embodiments, the method includes control of oxygen partial pressure in order to kinetically control the oxidation species of the crystalline vanadium oxide material. Other methods, uses, systems, protocols, and coatings are also described.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method of preparing crystalline vanadium oxide, the method comprising: (i) providing a vanadium oxide precursor comprising vanadium oxide particles; and (ii) annealing the vanadium oxide particles at a first O 2 partial pressure of from about 2 ppm to about 500 ppm, thereby preparing the crystalline vanadium oxide in tetragonal form. 2. The method of claim 1 , wherein step (ii) is performed at a first temperature of from about 200° C. to about 500° C. 3. The method of claim 2 , wherein step (ii) is performed for about 5 minutes or more. 4. The method of claim 2 , wherein step (ii) is performed by using a rapid annealing rate from an initial temperature to the first temperature, wherein the annealing rate is of from about 1° C. per minute to about 200° C. per minute. 5. The method of claim 1 , further comprising: (iii) obtaining one or more spectroscopy measurements of one or more vanadium oxide form(s) prepared in step (ii); and (iv) optionally adjusting to a second O 2 partial pressure, wherein the second O 2 partial pressure is less than the first O 2 partial pressure, thereby further isolating the crystalline vanadium oxide in tetragonal form. 6. The method of claim 5 , further comprising (iv) adjusting to a second O 2 partial pressure, wherein the second O 2 partial pressure is less than the first O 2 partial pressure, thereby further isolating the crystalline vanadium oxide in tetragonal form. 7. The method of claim 1 , wherein the crystalline vanadium oxide is VO 2 . 8. The method of claim 1 , wherein the vanadium oxide particles comprises nanoparticles and/or microparticles. 9. The method of claim 1 , wherein the crystalline vanadium oxide has substantially the same morphology as the vanadium oxide particles. 10. The method of claim 9 , wherein the vanadium oxide particles comprise vanadium pentoxide V 2 O 5 . 11. The method of claim 2 , wherein step (ii) is performed at a first temperature of from about 300° C. to about 450° C. 12. The method of claim 11 , wherein step (ii) is performed for about 5 minutes to about 6 hours. 13. The method of claim 1 , wherein the vanadium oxide particles comprises spherical particles. 14. The method of claim 1 , wherein the vanadium oxide particles comprises a dopant. 15. The method of claim 14 , wherein the dopant comprises tungsten. 16. The method of claim 1 , wherein the crystalline vanadium oxide comprises a 20 peak at about 27.6°, 27.8°, 37.0°, and/or 37.2°. 17. The method of claim 1 , wherein step (ii) is performed at the first O 2 partial pressure of about 50 ppm. 18. The method of claim 1 , wherein step (ii) is performed with O 2 and in the presence of a second gas selected from the group consisting of N 2 , He, and Ar. 19. A method of preparing crystalline vanadium oxide, the method comprising: providing a vanadium oxide precursor comprising vanadium oxide particles; (ii) annealing the vanadium oxide particles at a first O 2 partial pressure of from about 2 ppm to about 500 ppm, thereby preparing the crystalline vanadium oxide in tetragonal form; and (iii) obtaining one or more spectroscopy measurements of one or more vanadium oxide form(s) prepared in step (ii). 20. The method of claim 19 , wherein the crystalline vanadium oxide has substantially the same morphology as the vanadium oxide particles. 21. A method of preparing crystalline vanadium oxide, the method comprising: (i) providing a vanadium oxide precursor comprising vanadium oxide nanoparticles; and (ii) annealing the vanadium oxide nanoparticles at a first O 2 partial pressure of from about 2 ppm to about 500 ppm, thereby preparing the crystalline vanadium oxide in tetragonal form. 22. The method of claim 21 , wherein the vanadium oxide nanoparticles comprises spherical particles. 23. The method of claim 21 , wherein the vanadium oxide nanoparticles comprises a dopant.

Assignees

Inventors

Classifications

  • Heat treatments such as} Calcining; Fusing {; Pyrolysis (furnaces F27D) · CPC title

  • controlling the flow · CPC title

  • C01G31/02Primary

    Oxides · CPC title

  • Controlling or regulating processes (controlling or regulating in general G05) · CPC title

  • by d-values or two theta-values, e.g. as X-ray diagram · CPC title

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What does patent US10160660B1 cover?
The present invention relates to vanadium oxide and methods of controlling reaction processes for making such materials (e.g., powders). In particular embodiments, the method includes control of oxygen partial pressure in order to kinetically control the oxidation species of the crystalline vanadium oxide material. Other methods, uses, systems, protocols, and coatings are also described.
Who is the assignee on this patent?
Nat Tech & Eng Solutions Sandia Llc
What technology area does this patent fall under?
Primary CPC classification C01G31/02. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 25 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B1). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).