Colloidal semiconductor metal chalcogenide nanostructures

Patent metadata

Field	Value
Publication number	US-10160648-B2
Application number	US-201414898564-A
Country	US
Kind code	B2
Filing date	Jul 1, 2014
Priority date	Jul 1, 2013
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

This invention generally relates to metal chalcogenide nanostructures, methods for their preparation and methods of use. A method is disclosed that transforms zinc chalcogenide nanowires into nanorods or quadrilateral nanostructures in an anneal step. Particular embodiments comprise ZnO nanostructures.

First claim

The invention claimed is:

1. A process for the preparation of zinc chalcogenide nanostructures, the process comprising gradually annealing zinc chalcogenide nanowires at a rate of from 0.1° C./minute to 30° C./minute to transform said zinc chalcogenide nanowires into said zinc chalcogenide nanostructures, wherein said zinc chalcogenide nanostructures being selected from zinc chalcogenide nanorods and quadrilateral zinc chalcogenide nanostructures.

2. The process according to claim 1 , wherein said zinc chalcogenide nanowires being prepared by reacting zinc chalcogenide monomers under conditions permitting formation of said nanowires.

3. The process according to claim 1 , wherein the zinc chalcogenide nanowires being in the form of a solution of zinc chalcogenide nanowires further comprising zinc chalcogenide monomers.

4. The process according to claim 1 , wherein the zinc chalcogenide nanowires being in the form of a solution of zinc chalcogenide nanowires being substantially free of zinc chalcogenide monomers.

5. The process according to claim 4 , comprising a step of purifying the zinc chalcogenide nanowire solution to afford a solution free or substantially free of monomers.

6. The process according to claim 4 , the process being for the preparation of zinc chalcogenide nanorods, the process comprising gradually annealing the solution comprising zinc chalcogenide nanowires under conditions allowing mass redistribution or mass diffusion to thereby form said zinc chalcogenide nanorods.

7. The process according to claim 6 , comprising:
gradually annealing the solution of zinc chalcogenide nanowires in a medium at a minimum rate of 0.1° C./minute, said medium being free or substantially free of zinc chalcogenide monomers;
to thereby transform the nanowires in the medium into said nanorods.

8. The process according to claim 7 , the process comprising a step of obtaining a solution of nanowires in a medium and purifying the solution prior to affecting gradual annealing.

9. The process according to claim 7 , the process comprising:
obtaining nanowires in a medium,
purifying said medium to render said medium free of zinc chalcogenide monomers or to reduce the concentration of the monomers to below 10% of the original monomers concentration; and
gradually annealing said medium;
to thereby cause transformation of the nanowires in the medium into the nanorods.

10. The process according to claim 7 , the process comprising:
obtaining a solution consisting zinc chalcogenide nanowires, and at least one amine compound in a liquid medium; and
gradually annealing said solution under conditions permitting material diffusion/mass redistribution in the nanowire solution;
to thereby cause transformation of the nanowires in the solution into the nanorods.

11. The process according to claim 3 , the process comprising:
treating the medium comprising zinc chalcogenide nanowires with an amount of zinc chalcogenide monomers; said monomers being selected from single source monomers containing both zinc and a chalcogen; and a mixture of zinc precursors and chalcogen precursors; and
gradually annealing the medium comprising the nanowires and monomers;
to thereby transform the nanowires in the medium into quadrilateral zinc chalcogenide nanostructures.

12. The process according to claim 11 , wherein said quadrilateral zinc chalcogenide nanostructure having a frame-like structure wherein each of the four sides are joined or fused at the corners so as to surround a metal free space.

13. The process according to claim 12 , wherein the quadrilateral zinc chalcogenide nanostructure is selected amongst four-sided substantially 2D nanostructures.

14. The process according to claim 13 , wherein the quadrilateral zinc chalcogenide nanostructure is selected from a square, a rhombus, a rectangle, a parallelogram, a trapezoid and a kite.

15. The process according to claim 13 , wherein the quadrilateral zinc chalcogenide nanostructure is in the form of a rectangle wherein at least two opposite faces being parallel and/or have substantially the same length, width and/or aspect ratio.

Assignees

• Yissum Res Dev Co Of Hebrew Univ Jerusalem Ltd
• Qlight Nanotech Ltd
• Qlight Nanotech Ltd

Inventors

• Banin Uri
• Jia Guohua

Classifications

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• B82Y30/00

  Nanotechnology for materials or surface science, e.g. nanocomposites · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• C01B19/007 Primary

  Tellurides or selenides of metals (C01B19/002 takes precedence) · CPC title

• Y10S977/762

  Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less · CPC title