Composition for insulator of thin film transistor, insulator and organic thin film transistor prepared thereby

US10158078B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10158078-B2
Application numberUS-201715581413-A
CountryUS
Kind codeB2
Filing dateApr 28, 2017
Priority dateMay 12, 2016
Publication dateDec 18, 2018
Grant dateDec 18, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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Abstract

Official abstract text for this publication.

The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.

First claim

Opening claim text (preview).

What is claimed is: 1. A composition for a thin film transistor insulator comprising poly(ethylene-alt-maleic anhydride) (PEMA) in an amount of 73 weight %-92 weight %, a cross-linking agent in an amount of 5 weight %-20 weight %, and a polymer compound comprising the repeating unit represented by formula 1 below in an amount of 1 weight %-10 weight %: wherein, in the formula 1, R 1 is a C 1 ˜C 22 straight or branched alkyl. 2. The composition for a thin film transistor insulator according to claim 1 , wherein the R 1 of formula 1 is a C 6 ˜C 18 straight or branched alkyl. 3. The composition for a thin film transistor insulator according to claim 1 , wherein the weight average molecular weight (M W ) of the poly(ethylene-alt-maleic anhydride) is 100,000˜500,000 and the number average molecular weight (M n ) of the polymer compound is 30,000˜50,000. 4. The composition for a thin film transistor insulator according to claim 1 , wherein the cross-linking agent is represented by formula 2 below: NH 2 -A-NH 2   [Formula 2] wherein, in the formula 2, A is a substance selected from the group consisting of a C 6 ˜C 14 arylene, C 2 ˜C 8 straight alkylene, and C 5 ˜C 7 cycloalkylene. 5. An insulator for a thin film transistor formed from the composition of claim 1 . 6. The insulator for a thin film transistor according to claim 5 , wherein the insulator contains the R 1 functional group of the polymer compound on a part of a surface of the insulator. 7. The insulator for a thin film transistor according to claim 5 , wherein the thickness of the insulator is 10 nm˜400 nm. 8. A method for preparing an insulator for a thin film transistor comprising the step of spreading the composition of claim 1 on a substrate, followed by heat-treatment (step 1). 9. An organic thin film transistor comprising: a gate electrode formed on a substrate; a gate insulator comprising the insulator of claim 5 formed on the gate electrode; an organic semiconductor formed on the gate insulator; a source electrode formed on the organic semiconductor; and a drain electrode. 10. The organic thin film transistor according to claim 9 , wherein the organic semiconductor is one or more semiconductors selected from the group consisting of DNTT (dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene), pentacene, tetracene, oligo thiophene, polythiophene, metal phthalocyanine, polyphenylene, polyvinylenephenylene, polyfluorene, and fullerene (C 60 ).

Assignees

Inventors

Classifications

  • Amines; Quaternary ammonium compounds · CPC title

  • Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen (of cyclic esters of polyfunctional acids C08L31/00; of cyclic anhydrides of unsaturated acids C08L35/00); Compositions of derivatives of such polymers · CPC title

  • use in electrical or conductive gadgets · CPC title

  • containing two or more polymers of the same hierarchy C08L, and differing only in parameters such as density, comonomer content, molecular weight, structure · CPC title

  • C08F22/12Primary

    of phenols or saturated alcohols {(C08F22/1006 takes precedence)} · CPC title

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What does patent US10158078B2 cover?
The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an impr…
Who is the assignee on this patent?
Korea Res Inst Chemical Tech
What technology area does this patent fall under?
Primary CPC classification C08F22/12. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Dec 18 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).