Polaritonic hot electron infrared photodetector

Patent metadata

Field	Value
Publication number	US-10158040-B2
Application number	US-201715644216-A
Country	US
Kind code	B2
Filing date	Jul 7, 2017
Priority date	Jul 8, 2016
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

Polaritonic hot electron infrared photodetector that detect infrared radiation. In one implementation, the polaritonic hot electron infrared photodetector includes a first contact layer, a second contact layer, a first dielectric layer, a second dielectric layer, and a conductor layer. The first dielectric layer is coupled between the first contact layer and the second contact layer. The second dielectric layer is coupled between the first dielectric layer and the second contact layer. The conductor layer is coupled between the first dielectric layer and the second dielectric layer. Infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer.

First claim

What is claimed is:

1. A detector for detecting infrared radiation, the detector comprising:
a first contact layer;
a second contact layer;
a first dielectric layer coupled between the first contact layer and the second contact layer;
a second dielectric layer coupled between the first dielectric layer and the second contact layer; and
a conductor layer coupled between the first dielectric layer and the second dielectric layer,
wherein infrared radiation incident upon the conductor layer is operable to create hot carriers that are injected from a conduction band of the conductor layer to a conduction band of the second contact layer,
wherein the conductor layer is formed of a conducting metal oxide.

2. The detector of claim 1 , wherein a dielectric constant of the conductor layer is approximately zero at a working wavelength of the detector.

3. The detector of claim 1 , wherein the detector is configured to operate in an epsilon near zero mode.

4. The detector of claim 1 , wherein the first contact layer and the second contact layer apply a voltage bias between the first dielectric layer and the second dielectric layer.

5. The detector of claim 1 , wherein the conducting metal oxide is cadmium oxide.

6. The detector of claim 5 , wherein the cadmium oxide is doped with dysprosium.

7. The detector of claim 5 , wherein the first dielectric layer and the second dielectric layer are formed of magnesium oxide.

8. The detector of claim 7 , wherein the first contact layer is formed of the cadmium oxide doped with dysprosium.

9. The detector of claim 8 , wherein the second contact layer is formed of gallium nitride.

10. A detector for detecting infrared radiation, the detector comprising:
a first contact layer;
a second contact layer;
a first dielectric layer coupled between the first contact layer and the second contact layer;
a second dielectric layer coupled between the first dielectric layer and the second contact layer;
a first conductor layer coupled between the first dielectric layer and the second dielectric layer;
a third dielectric layer coupled between the second dielectric layer and the second contact layer; and
a second conductor layer coupled between the second dielectric layer and the third dielectric layer,
wherein infrared radiation incident upon the first conductor layer is operable to create hot carriers that are injected from a conduction band of the first conductor layer to a conduction band of the second dielectric layer,
wherein a first carrier concentration of the first conductor layer is different than a second carrier concentration of the second conductor layer.

11. The detector of claim 10 , wherein a first carrier concentration of the first conductor layer is substantially equal to a second carrier concentration of the second conductor layer.

12. The detector of claim 10 , wherein a first dielectric constant of the first conductor layer is approximately zero at a working wavelength of the detector, and wherein a second dielectric constant of the second conductor layer is approximately zero at the working wavelength of the detector.

13. The detector of claim 10 , wherein a first dielectric constant of the first conductor layer is approximately zero at a first working wavelength of the detector, wherein a second dielectric constant of the second conductor layer is approximately zero at a second working wavelength of the detector, wherein the second working wavelength of the detector is different than the first working wavelength of the detector.

14. The detector of claim 10 , wherein the detector is configured to operate in an epsilon near zero mode.

15. A detector for detecting infrared radiation, the detector comprising:
a first contact layer;
a second contact layer;
a first dielectric layer coupled between the first contact layer and the second contact layer;
a second dielectric layer coupled between the first dielectric layer and the second contact layer;
a first conductor layer coupled between the first dielectric layer and the second dielectric layer;
a third dielectric layer coupled between the second dielectric layer and the second contact layer; and
a second conductor layer coupled between the second dielectric layer and the third dielectric layer,
wherein infrared radiation incident upon the first conductor layer is operable to create hot carriers that are injected from a conduction band of the first conductor layer to a conduction band of the second dielectric layer,
wherein the first conductor layer and the second conductor layer are formed of a conducting metal oxide.

16. The detector of claim 15 , wherein the conducting metal oxide is cadmium oxide doped with dysprosium.

17. The detector of claim 15 , wherein the conducting metal oxide is cadmium oxide, and wherein the first dielectric layer, the second dielectric layer, and the third dielectric layer are formed of magnesium oxide.

18. The detector of claim 17 , wherein the first contact layer is formed of the cadmium oxide doped with dysprosium, and wherein the second contact layer is formed of gallium nitride.

Assignees

• Univ North Carolina State

Inventors

• Sachet Edward
• Maria Jon-Paul
• Shelton Christopher

Classifications

• G02B5/008

  Surface plasmon devices (diffractive gratings with a pitch less than or comparable to the wavelength G02B5/1809; surface plasmons in integrated optics G02B6/1226; optical analysis of materials by means of surface plasmons G01N21/553) · CPC title

• G01J1/44

  Electric circuits {(for command of an exposure part G03B7/02)} · CPC title

• G01J1/044

  using shutters · CPC title

• H01L31/112 Primary

  Electricity · mapped topic

• G01J5/10

  using electric radiation detectors · CPC title