CMOS and bipolar device integration including a tunable capacitor

Patent metadata

Field	Value
Publication number	US-10158030-B2
Application number	US-201715431623-A
Country	US
Kind code	B2
Filing date	Feb 13, 2017
Priority date	Feb 13, 2017
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

A tunable capacitor may include a first terminal having a first semiconductor component with a first polarity. The tunable capacitor may also include a second terminal having a second semiconductor component with a second polarity. The second component may be adjacent to the first semiconductor component. The tunable capacitor may further include a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component.

First claim

What is claimed is:

1. A tunable capacitor, comprising:
a first terminal comprising a first semiconductor component with a first polarity;
a second terminal comprising a second semiconductor component with a second polarity, adjacent to the first semiconductor component; and
a first conductive material electrically coupled to a first depletion region, the first depletion region proximate a first sidewall of the first semiconductor component.

2. The tunable capacitor of claim 1 , further comprising a second conductive material electrically coupled to a second depletion region at a second sidewall of the first semiconductor component.

3. The tunable capacitor of claim 2 , in which the second depletion region extends onto a surface of the second conductive material that faces the second semiconductor component.

4. The tunable capacitor of claim 1 , in which the first semiconductor component comprises a compound semiconductor.

5. The tunable capacitor of claim 4 , in which the first semiconductor component comprises a III-V compound semiconductor material or a II-VI compound semiconductor material.

6. The tunable capacitor of claim 1 , in which the first conductive material comprises a metal stack.

7. The tunable capacitor of claim 1 , in which the first conductive material comprises a Schottky contact.

8. The tunable capacitor of claim 1 , in which the first depletion region extends onto a surface of the first conductive material that faces the second semiconductor component.

9. The tunable capacitor of claim 1 , in which the first semiconductor component comprises an N-type collector, and the second semiconductor component comprises a P-type doped base.

10. The tunable capacitor of claim 1 , integrated into a radio frequency (RF) front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer.

11. A method of integrating a semiconductor device with a complementary metal-oxide-semiconductor (CMOS) structure, comprising:
forming a collector layer, a base layer, and an emitter layer on a semiconductor substrate;
patterning the emitter layer;
fabricating metallization to access the emitter layer;
bonding the CMOS structure to the semiconductor substrate;
patterning the collector layer and the base layer to form the semiconductor device;
forming vias to access the CMOS structure; and
electrically coupling the CMOS structure to the semiconductor device.

12. The method of claim 11 , in which the CMOS structure comprises a CMOS capacitor and the semiconductor device comprises a heterojunction bipolar transistor (HBT) and/or a tunable capacitor.

13. The method of claim 11 , in which the semiconductor device comprises a III-V compound semiconductor material or a II-VI compound semiconductor material.

14. The method of claim 11 , in which the CMOS structure comprises at least one CMOS device.

15. The method of claim 11 , further comprising fabricating at least one conductive bump.

16. The method of claim 11 , in which the semiconductor substrate comprises silicon, gallium arsenide (GaAs), or indium phosphide.

17. The method of claim 11 , further comprising integrating the semiconductor device into a radio frequency (RF) front end module, the RF front end module incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer.

18. A radio frequency (RF) front end module, comprising:
a filter, comprising a die, a substrate supporting the die, a molding compound surrounding the die, a tunable capacitor comprising a first terminal comprising a first semiconductor component with a first polarity, a second terminal comprising a second semiconductor component with a second polarity, adjacent to the first semiconductor component, and a first conductive material electrically coupled to a first depletion region at a first sidewall of the first semiconductor component;
a diplexer coupled to the filter; and
an antenna coupled to an output of the diplexer.

19. The RF front end module of claim 18 , in which the first semiconductor component comprises an N-type collector, and the second semiconductor component comprises a P-type doped base.

20. The RF front end module of claim 18 , incorporated into at least one of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a mobile phone, and a portable computer.

Assignees

• Qualcomm Inc

Inventors

• Gu Shiqun
• Tao Gengming
• Hammond Richard
• Dutta Ranadeep
• Nowak Matthew Michael
• Carobolante Francesco

Classifications

• H10W44/248

  for antennas · CPC title

• H10W72/252

  comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/222

  Multilayered bumps, e.g. a coating on top and side surfaces of a bump core · CPC title

• H10W72/244

  relative to underlying supporting features, e.g. bond pads, RDLs or vias · CPC title

• H10W44/601

  Capacitive arrangements (H10W44/20 takes precedence) · CPC title