Construction of integrated circuitry and a method of forming an elevationally-extending conductor laterally between a pair of structures

Patent metadata

Field	Value
Publication number	US-10157841-B2
Application number	US-201715489311-A
Country	US
Kind code	B2
Filing date	Apr 17, 2017
Priority date	Apr 17, 2017
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

A method includes forming insulative material along the opposing sides of a conductive via and a conductive line in a vertical cross-section comprising forming a laterally-inner-insulator material comprising silicon, oxygen, and carbon laterally-outward of the opposing sides of the conductive via and the conductive line in the vertical cross-section. A laterally-intervening-insulator material comprising silicon and oxygen is formed laterally-outward of opposing sides of the laterally-inner-insulator material in the vertical cross-section. The laterally-intervening-insulator material comprises less carbon, if any, than the laterally-inner-insulator material. A laterally-outer-insulator material comprising silicon, oxygen, and carbon is formed laterally-outward of opposing sides of the laterally-intervening-insulator material in the vertical cross-section. The laterally-outer-insulator material comprises more carbon than the laterally-inner-insulator material. Elevationally-extending-conductor material is formed laterally between and along the insulative material in the vertical cross-section. Additional method aspects, including structure independent of method of fabrication, are disclosed.

First claim

The invention claimed is:

1. A method of forming an elevationally-extending conductor laterally between a pair of structures, comprising:
forming a pair of structures individually comprising an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the elevationally-extending-conductive via, the conductive line and the elevationally-extending-conductive via respectively having opposing sides in a vertical cross-section;
after forming said pair of structures, forming elevationally-extending-insulative material along the opposing sides of the elevationally-extending-conductive via and the conductive line in the vertical cross-section, the forming of the elevationally-extending-insulative material comprising:
forming a laterally-inner-insulator material comprising silicon, oxygen, and carbon laterally-outward of the opposing sides of the elevationally-extending-conductive via and the conductive line in the vertical cross-section;
forming a laterally-intervening-insulator material laterally outward of and laterally along the laterally-inner-insulator material, the laterally-intervening-insulator material comprising silicon and oxygen laterally-outward of opposing sides of the laterally-inner-insulator material in the vertical cross-section;
the laterally-intervening-insulator material comprising from 0 atomic percent carbon to greater than 0 atomic percent carbon and if greater than 0 atomic percent carbon being less than an amount of atomic percent carbon in the laterally-inner-insulator material; and
forming a laterally-outer-insulator material laterally outward of and laterally along the laterally-intervening-insulator material, the laterally-outer-insulator material comprising silicon, oxygen, and carbon laterally-outward of opposing sides of the laterally-intervening-insulator material in the vertical cross-section; the laterally-outer-insulator material comprising more carbon than the laterally-inner-insulator material; and
forming elevationally-extending-conductor material laterally between and laterally along the elevationally-extending-insulative material in the vertical cross-section.

2. The method of claim 1 wherein the laterally-intervening-insulator material has 0 atomic percent carbon therein.

3. The method of claim 1 wherein the laterally-intervening-insulator material comprises carbon.

4. The method of claim 3 wherein the laterally-intervening-insulator material comprises at least 1.0 atomic percent carbon.

5. The method of claim 1 wherein the laterally-inner-insulator material comprises greater than 4.0 atomic percent carbon and less than 9.0 atomic percent carbon, the laterally-intervening-insulator material comprises no more than 4.0 atomic percent carbon, and the laterally-outer-insulator material comprises at least 9.0 atomic percent carbon.

6. The method of claim 5 wherein the laterally-intervening-insulator material comprises carbon.

7. The method of claim 5 wherein the laterally-outer-insulator material comprises no more than 25 atomic percent carbon.

8. The method of claim 7 wherein the laterally-outer-insulator material comprises no more than 15 atomic percent carbon.

9. The method of claim 1 wherein the laterally-inner-insulator material has k greater than 4.2 and less than 4.5, the laterally-intervening-insulator material has k no greater than 4.1, and the laterally-outer-insulator material has k of at least 4.5.

10. The method of claim 1 comprising forming the elevationally-extending-insulative material onto a substrate comprising the pair of structures; the forming of the elevationally-extending-insulative material comprising sequentially forming the laterally-inner-insulator material, the laterally-intervening-insulator material, and the laterally-outer-insulator material in situ in a deposition chamber without removing the substrate from the deposition chamber between starting to form the laterally-inner-insulator material to starting to form the laterally-outer-insulator material.

11. The method of claim 1 comprising forming the laterally-outer-insulator material directly against the laterally-intervening-insulator material.

12. The method of claim 1 comprising forming the laterally-intervening-insulator material directly against the laterally-inner-insulator material.

13. The method of claim 12 comprising forming the laterally-outer-insulator material directly against the laterally-intervening-insulator material.

14. The method of claim 1 comprising reducing lateral thickness of the laterally-outer-insulator material before forming the elevationally-extending-conductor material.

15. The method of claim 1 comprising removing the laterally-intervening-insulator material from being laterally between the pair of structures to form a pair of void spaces that individually are laterally between the laterally-inner-insulator material and the laterally-outer-insulator material in a finished circuit construction.

16. The method of claim 15 wherein at least a majority of the removing occurs after forming the conductor material.

17. The method of claim 1 comprising leaving the laterally-intervening-insulator material in a finished circuit construction.

18. The method of claim 1 wherein each of the laterally-inner-insulator material and the laterally-outer-insulator material at least as initially formed consists essentially of silicon, oxygen, carbon.

19. A construction of integrated circuitry, comprising:
a pair of structures individually comprising an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the elevationally-extending-conductive via, the conductive line and the elevationally-extending-conductive via respectively having opposing sides in a vertical cross-section;
elevationally-extending-insulative material along the opposing sides of the elevationally-extending-conductive via and the conductive line in the vertical cross-section, the elevationally-extending-insulative material comprising:
a laterally-inner-insulator material comprising silicon, oxygen, and carbon laterally-outward of the opposing sides of the elevationally-extending-conductive via and the conductive line in the vertical cross-section;
a laterally-intervening-insulator material laterally outward of and laterally along the laterally-inner-insulator material, the laterally-intervening-insulator material comprising silicon and oxygen laterally-outward of opposing sides of the laterally-inner-insulator material in the vertical cross-section;
the laterally-intervening-insulator material comprising from 0 atomic percent carbon to greater than 0 atomic percent carbon and if greater than 0 atomic percent carbon being less than an amount of atomic percent carbon in the laterally-inner-insulator material; and
a laterally-outer-insulator material laterally outward of and laterally along the laterally-intervening-insulator material, the laterally-outer-insulator material comprising silicon, oxygen, and carbon laterally-outward of opposing sides of the laterally-intervening-insulator material in the vertical cross-section, the laterally-outer-insulator material comprising more carbon than the laterally-inner-insulator material; and
elevationally-extending-conductor material laterally between and laterally along the elevationally-extending-insulative material in the vertical cross-section.

20. A construction of integrated circuitry, comprising:
a pair of structures individually comprising an elevationally-extending-co

Assignees

• Micron Technology Inc

Inventors

• Borsari Silvia

Classifications

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6922 Primary

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10W20/42

  Vias, e.g. via plugs · CPC title