Methods of removing residual polymers formed during a boron-doped amorphous carbon layer etch process
US-2016005602-A1 · Jan 7, 2016 · US
Plasma processing method and plasma processing apparatus
US10157750B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10157750-B2 |
| Application number | US-201715558045-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 31, 2017 |
| Priority date | Mar 28, 2016 |
| Publication date | Dec 18, 2018 |
| Grant date | Dec 18, 2018 |
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Abstract
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The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shape controllability of vertical processing. In the present invention, in a plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film containing boron, the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.
First claim
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The invention claimed is: 1. A plasma processing method for forming a mask by plasma etching a laminated film having an amorphous carbon film containing boron, wherein the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas. 2. The plasma processing method according to claim 1 , wherein the fluorine-containing gas is CHF 3 gas, CH 2 F 2 gas, CH 3 F gas, NF 3 gas, CF 4 gas, or SF 6 gas, and the halogen gas is Cl 2 gas, HBr gas, or HI gas. 3. The plasma processing method according to claim 1 , wherein a flow rate ratio of the halogen gas with respect to the mixed gas is higher than a flow rate ratio of the fluorine-containing gas with respect to the mixed gas. 4. The plasma processing method according to claim 1 , wherein the boron-containing amorphous carbon film is plasma-etched by supplying a radio frequency power of 1000 W or more to a sample stand on which a sample on which the laminated film is formed is placed or by applying a radio frequency peak-to-peak voltage of 1350 V or more to the sample stand. 5. The plasma processing method according to claim 1 , wherein a pressure is set to 4 Pa or more to plasma-etch the boron-containing amorphous carbon film. 6. The plasma processing method according to claim 1 , wherein the boron-containing amorphous carbon film is plasma-etched by using a mixed gas of O 2 gas, CHF 3 gas, Cl 2 gas, and SiCl 4 gas. 7. A plasma processing method for forming a mask by plasma-etching a laminated film including an amorphous carbon film, wherein the amorphous carbon film is plasma-etched by using a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrafluoride gas, or a mixed gas of an oxygen gas, a fluorine-containing gas, a halogen gas, and a silicon tetrachloride gas.
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using an anti-reflective coating · CPC title
of materials not containing Si, e.g. PZT or Al2O3 · CPC title
using masks for insulating materials · CPC title
the material being a silicon oxynitride, e.g. SiON or SiON:H · CPC title
the material being boron or phosphorus doped silicon oxides, e.g. BPSG, BSG or PSG · CPC title
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- What does patent US10157750B2 cover?
- The present invention provides a plasma processing method and a plasma processing apparatus. The plasma processing method enables consistent processing by realizing a high selectivity and a high etching rate when etching a laminated film using a boron-containing amorphous carbon film, realizes high throughput including prior and post processes by simplifying a mask forming process, and has shap…
- Who is the assignee on this patent?
- Hitachi High Tech Corp
- What technology area does this patent fall under?
- Primary CPC classification H10P50/242. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 18 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).