Semiconductor processing apparatus with protective coating including amorphous phase

US10157731B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10157731-B2
Application numberUS-201514545042-A
CountryUS
Kind codeB2
Filing dateMar 19, 2015
Priority dateNov 12, 2008
Publication dateDec 18, 2018
Grant dateDec 18, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal base, or an oxyfluoride amorphous phase, or a combination of those materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a surface of substrates having a melting point which is higher than about 1600°, substrates such as aluminum oxide, aluminum nitride, quartz, silicon carbide and silicon nitride, by way of example.

First claim

Opening claim text (preview).

We claim: 1. A substrate protected by a coating which is resistant to a halogen-comprising plasma, comprising: a sintered composition comprising: an amorphous oxyfluoride; and at least one of a yttrium-based fluoride, or a yttrium-based oxyfluoride, wherein the substrate has a melting point of higher than about 1600° C., and wherein the coating comprises 5 ppm or less Ni impurity. 2. The substrate protected by a coating in accordance with claim 1 , wherein a portion of said yttrium-based oxyfluoride or said yttrium-based fluoride is present as a crystalline phase. 3. The protective coating composition in accordance with claim 2 , wherein said crystalline portion of said coating composition ranges from about 70% by weight to about 100% by weight. 4. The substrate protected by a coating in accordance with claim 2 , wherein additional crystalline phase compounds are present, and wherein said additional crystalline phase compounds were formed during sintering of said composition due to the presence of a dopant selected from the group consisting of an oxide, fluoride or oxyfluoride of neodymium, cerium, samarium, erbium, aluminum, scandium, lanthanum, hafnium, niobium, zirconium, ytterbium, and combinations thereof. 5. The protective coating composition in accordance with claim 4 , wherein said crystalline portion of said coating composition ranges from about 70% by weight to about 100% by weight. 6. The substrate protected by a coating in accordance with claim 1 , wherein the yttrium-based fluoride comprises YF 3 or the yttrium-based oxyfluoride comprises YOF. 7. The substrate protected by a coating in accordance with claim 1 , wherein the sintered composition comprises a transition layer between said substrate and a surface layer of said sintered composition, wherein said transition layer comprises aluminum fluoride. 8. The substrate protected by a coating in accordance with claim 1 , wherein the substrate comprises a surface of a component selected from the group consisting of a shower head, a process chamber lid, a process chamber liner and an electrostatic chuck. 9. The substrate protected by a coating in accordance with claim 1 , wherein the sintered composition was cooled at a rate of about 310° C./h, or about 325° C./h. 10. The substrate protected by a coating in accordance with claim 1 or claim 9 , wherein the sintered composition comprises about 22 mol % Y—Al—O—F amorphous phase. 11. The substrate protected by a coating in accordance with claim 1 or claim 9 , wherein the sintered composition comprises a YF 3 crystalline phase having a grain size of greater than 100 nm. 12. The substrate protected by a coating in accordance with claim 1 or claim 9 , wherein the sintered composition comprises a Y—Nd—Al—O—F amorphous phase.

Assignees

Inventors

Classifications

  • Ceramics · CPC title

  • characterised by the material treated · CPC title

  • Specific sintering techniques, e.g. centrifugal sintering · CPC title

  • Fluorides · CPC title

  • Means for protecting the vessel against plasma · CPC title

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Frequently asked questions

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What does patent US10157731B2 cover?
Embodiments of the invention relate to compositions including a yttrium-based fluoride crystal phase, or a yttrium-based oxyfluoride crystal base, or an oxyfluoride amorphous phase, or a combination of those materials. The compositions may be used to form a solid substrate for use as a semiconductor processing apparatus, or the compositions may be used to form a coating which is present upon a …
Who is the assignee on this patent?
Applied Materials Inc
What technology area does this patent fall under?
Primary CPC classification H01J37/32495. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 18 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).