Plasma enhanced atomic layer deposition with pulsed plasma exposure
US-9076646-B2 · Jul 7, 2015 · US
US10157729B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10157729-B2 |
| Application number | US-201414260051-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 23, 2014 |
| Priority date | Feb 22, 2012 |
| Publication date | Dec 18, 2018 |
| Grant date | Dec 18, 2018 |
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Systems and methods for soft pulsing are described. One of the systems includes a master radiofrequency (RF) generator for generating a first portion of a master RF signal during a first state and a second portion of the master RF signal during a second state. The master RF signal is a sinusoidal signal. The system further includes an impedance matching circuit coupled to the master RF generator via an RF cable to modify the master RF signal to generate a modified RF signal and a plasma chamber coupled to the impedance matching circuit via an RF transmission line. The plasma chamber is used for generating plasma based on the modified RF signal. A statistical measure of the first portion has a positive or a negative slope.
Opening claim text (preview).
The invention claimed is: 1. A plasma system comprising: a master radiofrequency (RF) generator for generating a first portion of a master RF signal during a first state of a digital pulsed signal, a second portion of the master RF signal during a second state of the digital pulsed signal, and a third portion of the master RF signal during a third state of the digital pulsed signal, wherein the master RF signal is a sinusoidal signal; a slave RF generator for generating a slave RF signal in synchronization with the master RF generator, wherein the slave RF generator is configured to generate a first portion of the slave RF signal during the first state of the digital pulsed signal, a second portion of the slave RF signal during the second state of the digital pulsed signal, and a third portion of the slave RF signal during the third state of the digital pulsed signal, wherein during the first state, the digital pulsed signal has a first horizontal level, during the second state, the digital pulsed signal has a second horizontal level, and during the third state, the digital pulsed signal has a third horizontal level, wherein the third horizontal level is different from the first horizontal level and from the second horizontal level and the second horizontal level is different from the first horizontal level, wherein the digital pulsed signal transitions from an instance of the first horizontal level to an instance of the second horizontal level, transitions from the instance of the second horizontal level to an instance of the third horizontal level, and transitions from the instance of the third horizontal level to another instance of the first horizontal level to repeat the first, second, and third horizontal levels periodically; an impedance matching circuit coupled to the master RF generator via an RF cable, wherein the impedance matching circuit is coupled to the slave RF generator via another RF cable, wherein the impedance matching circuit is configured to modify the master RF signal and the slave RF signal to generate a modified RF signal; and a plasma chamber having an electrode coupled to the impedance matching circuit via an RF transmission line, the plasma chamber is configured to generate plasma based on the modified RF signal received by the electrode, wherein an envelope of the first portion of the master RF signal has a positive slope, wherein an envelope of the second portion of the master RF signal has a slope different from the positive slope of the envelope of the first portion of the master RF signal, and wherein an envelope of the third portion of the master RF signal has a slope of zero and the slope of zero is different from the slope of the envelope of the second portion of the master RF signal. 2. The plasma system of claim 1 , wherein the slave RF generator is coupled to the master RF generator for receiving a first portion of the digital pulsed signal during the first state from the master RF generator and a second portion of the digital pulsed signal during the second state from the master RF generator, wherein the slave signal is a sinusoidal signal, wherein an envelope of the first portion of the slave RF signal has a positive slope. 3. The plasma system of claim 2 , wherein the envelope of the first portion of the slave RF signal has the positive slope during at least a portion of a time in which the envelope of the first portion of the master RF signal has the positive slope. 4. The plasma system of claim 1 , wherein the master RF signal has frequency and power. 5. The plasma system of claim 1 , wherein the electrode is included within a chuck, the plasma system further comprising: a gap control system coupled to the master RF generator for generating a first portion of a gap signal and a second portion of the gap signal, wherein the plasma chamber includes an upper electrode facing the chuck, the gap control system further coupled to the upper electrode of the plasma chamber via a motor for changing a gap between the upper electrode and the chuck, wherein the first portion of the gap signal has a positive slope. 6. The plasma system of claim 1 , wherein the electrode is included within a chuck, the plasma system further including an upper electrode and a gap sensor for determining an amount of gap between the upper electrode and the chuck. 7. The plasma system of claim 1 , wherein the plasma chamber has a chuck and an upper electrode, the plasma system further comprising: a host system for generating the digital pulsed signal; and a phase delay circuit coupled to the host system for delaying a phase of the digital pulsed signal based on an amount of gap between the upper electrode and the chuck, the host system coupled to the master RF generator via the phase delay circuit. 8. The plasma system of claim 1 , wherein the impedance matching circuit modifies the master RF signal and the slave RF signal by matching an impedance of a load coupled to the impedance matching circuit with that of a source coupled to the impedance matching circuit. 9. The plasma system of claim 1 , wherein the positive slope is non-zero and finite. 10. The plasma system of claim 1 , wherein RF values of the third portion of the master RF signal are zero. 11. The plasma system of claim 1 , wherein each of the first state, the second state, and the third state occupies an amount of time during a clock cycle, wherein the envelope of the first portion of the master RF signal has the positive slope during one of the amounts of time of the clock cycle, wherein during another one of the amounts of time of the clock cycle, the envelope of the second portion of the master RF signal has the different slope, wherein during an additional one of the amounts of time of the clock cycle, the envelope of the third portion of the master RF signal has the slope of zero. 12. The plasma system of claim 1 , wherein the envelope of the first portion of the master RF signal is an amplitude of the first portion of the master RF signal, wherein the envelope of the second portion of the master RF signal is an amplitude of the second portion of the master RF signal, and wherein the envelope of the third portion of the master RF signal is an amplitude of the third portion of the master RF signal. 13. The plasma system of claim 1 , wherein the digital pulsed signal is generated by a logic circuit. 14. The plasma system of claim 1 , wherein during the first state, an envelope of a first portion of the slave RF signal has a positive slope, during the second state, an envelope of the second portion of the master RF signal has a negative slope, and during the second state, an envelope of a second portion of the slave RF signal has a negative slope. 15. A plasma system comprising: a first radiofrequency (RF) generator for generating a first portion of a first RF signal during a first state of a digital pulsed signal, a second portion of the first RF signal during a second state of the digital pulsed signal, and a third portion of the first RF signal during a third state of the digital pulsed signal, wherein the first RF signal is a sinusoidal signal, a second RF generator for generating a second RF signal in synchronization with the first RF generator, wherein the second RF generator is configured to generate a first portion of the second RF signal during the first state of the digital pulsed signal, a second portion of the second RF signal during the second state of the digital pulsed signal, and a third portion of the second RF signal during the third state of the digital pulsed signal, wherein during the first state, the digital pulsed
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