Anneal techniques for chalcogenide semiconductors
US-9472709-B2 · Oct 18, 2016 · US
US10156739B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10156739-B2 |
| Application number | US-201715431867-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 14, 2017 |
| Priority date | Feb 14, 2017 |
| Publication date | Dec 18, 2018 |
| Grant date | Dec 18, 2018 |
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Techniques for integrating photovoltaics into wearables, such as eyewear, are provided. In one aspect, a method of forming a lens for photovoltaic eyewear includes: forming a semitransparent photovoltaic film on at least a portion of a viewable area of the lens, wherein the semitransparent photovoltaic film includes an inorganic absorber material having a band gap of from about 1.4 eV to about 2.2 eV, and ranges therebetween. The semitransparent photovoltaic film can be configured to block greater than about 99.9% UVA, UVB, and UVC light rays, and from about 95% to about 99%, and ranges therebetween, of HEV light rays from passing therethrough. Photovoltaic eyewear formed by the present techniques is also provided.
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What is claimed is: 1. A method of forming a lens for photovoltaic eyewear, the method comprising the step of: forming a semitransparent photovoltaic film on at least a portion of a viewable area of the lens, wherein the semitransparent photovoltaic film comprises an inorganic absorber material having a band gap of from about 1.4 eV to about 2.2 eV, and ranges therebetween. 2. The method of claim 1 , wherein the semitransparent photovoltaic film is configured to block greater than about 99.9%, and ranges therebetween, of ultraviolet (UV) UVA, UVB, and UVC light rays, and from about 95% to about 99%, and ranges therebetween, of HEV light rays from passing therethrough. 3. The method of claim 1 , wherein the inorganic absorber material comprises a material selected from the group consisting of: a chalcogen, amorphous silicon, amorphous silicon carbide, a chalcopyrite, a kesterite, a perovskite, a III-V material, and combinations thereof. 4. The method of claim 1 , wherein the inorganic absorber material comprises from about 90% to about 99.999%, and ranges therebetween, of selenium (Se). 5. The method of claim 1 , wherein the inorganic absorber material comprises a chalcopyrite selected from the group consisting of: CuGa(S x ,Se 1-x ) 2 wherein 0.15<x<1, CuIn(S y ,Se 1-y ) 2 wherein 0.8<y<1, and combinations thereof. 6. The method of claim 1 , wherein the inorganic absorber material comprises a kesterite Cu 2 ZnSn(S z ,Se 1-z ) 4 wherein 0.8<z<1. 7. The method of claim 1 , wherein the inorganic absorber material comprises a III-V material selected from the group consisting of: gallium phosphide (GaP), gallium arsenide (GaAs), aluminum arsenide (AlAs), aluminum antimonide (AlSb), indium phosphide (InP), and combinations thereof. 8. The method of claim 1 , wherein the step of forming the semitransparent photovoltaic film on the lens comprises the steps of: depositing a first transparent conducting oxide on the lens; forming a photovoltaic absorber layer comprising the inorganic absorber material on the first transparent conducting oxide; forming an n-type layer on the photovoltaic absorber layer; and depositing a second transparent conducting oxide on the n-type layer. 9. The method of claim 8 , further comprising the steps of: forming first metal contacts on the lens prior to depositing the first transparent conducting oxide; and forming second metal contacts on the second transparent conducting oxide, wherein the first metal contacts and the second metal contacts are each formed from a metal selected from the group consisting of: aluminum (Al), gold (Au), silver (Ag), molybdenum (Mo), and combinations thereof. 10. The method of claim 8 , further comprising the step of: forming a back-surface field layer on the first transparent conducting oxide, wherein the back-surface field layer has a workfunction of greater than about 5.2 eV. 11. The method of claim 8 , further comprising the step of: forming a buffer layer on the n-type layer. 12. The method of claim 1 , wherein the step of forming the semitransparent photovoltaic film on the lens comprises the steps of: depositing a first transparent conducting oxide on the lens; forming an n-type layer on the first transparent conducting oxide; forming a photovoltaic absorber layer comprising the inorganic absorber material on the n-type layer; and depositing a second transparent conducting oxide on the photovoltaic absorber layer. 13. The method of claim 12 , further comprising the steps of: forming first metal contacts on the lens prior to depositing the first transparent conducting oxide; and forming second metal contacts on the second transparent conducting oxide, wherein the first metal contacts and the second metal contacts are each formed from a metal selected from the group consisting of: Al, Au, Ag, Mo, and combinations thereof. 14. The method of claim 12 , further comprising the step of: forming a back-surface field layer on the photovoltaic absorber layer, wherein the back-surface field layer has a workfunction of greater than about 5.2 eV. 15. Photovoltaic eyewear, comprising: at least one lens; and a semitransparent photovoltaic film on at least a portion of a viewable area of the at least one lens, wherein the semitransparent photovoltaic film comprises an inorganic absorber material having a band gap of from about 1.4 eV to about 2.2 eV, and ranges therebetween. 16. The photovoltaic eyewear of claim 15 , wherein the semitransparent photovoltaic film is configured to block greater than about 99.9% UVA, UVB, and UVC light rays, and from about 95% to about 99%, and ranges therebetween, of HEV light rays from passing therethrough. 17. The photovoltaic eyewear of claim 15 , wherein the inorganic absorber material comprises a material selected from the group consisting of: a chalcogen, amorphous silicon, amorphous silicon carbide, a chalcopyrite, a kesterite, a perovskite, a III-V material, and combinations thereof. 18. The photovoltaic eyewear of claim 15 , wherein the semitransparent photovoltaic film is formed on an inside of the lens so as to face a user of the photovoltaic eyewear. 19. The photovoltaic eyewear of claim 15 , wherein the semitransparent photovoltaic film is formed on an outside of the lens so as to face away from a user of the photovoltaic eyewear. 20. The photovoltaic eyewear of claim 15 , wherein the semitransparent photovoltaic film comprises: a first transparent conducting oxide disposed on the lens; a photovoltaic absorber layer comprising the inorganic absorber material disposed on the first transparent conducting oxide; an n-type layer disposed on the photovoltaic absorber layer; and a second transparent conducting oxide disposed on the n-type layer. 21. The photovoltaic eyewear of claim 15 , wherein the semitransparent photovoltaic film comprises: a first transparent conducting oxide disposed on the lens; an n-type layer disposed on the first transparent conducting oxide; a photovoltaic absorber layer comprising the inorganic absorber material disposed on the n-type layer; and a second transparent conducting oxide disposed on the photovoltaic absorber layer. 22. The photovoltaic eyewear of claim 15 , further comprising: a neck strap attached to the eyewear; and the semitransparent photovoltaic film affixed to the neck strap.
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