Monolithic heterogeneous single crystals with multiple regimes for solid state laser applications

Patent metadata

Field	Value
Publication number	US-10156025-B2
Application number	US-201615146080-A
Country	US
Kind code	B2
Filing date	May 4, 2016
Priority date	May 4, 2015
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

Heterogeneous monolithic crystals that can include multiple regimes in a complex geometry are described. The crystals can be advantageously utilized in laser applications. The heterogeneous crystals can be created through growth of different regimes in interior voids formed in a seed crystal, which can in turn be homogeneous or heterogeneous. In one particular embodiment, a regime can be grown within a void of a seed crystal by use of a hydrothermal growth process. Formed crystals can be utilized in lasing and waveguiding applications, among others.

First claim

What is claimed is:

1. A method for forming a monolithic heterogeneous crystal comprising:
forming a void within a crystal, the crystal comprising a first composition that includes a host material, the void extending from a surface of the crystal to an interior location within the crystal, the void defining a depth from the surface to the interior location and defining a cross-sectional area within the crystal;
depositing a second composition within the void, the second composition comprising the host material, the first and second compositions differing from one another by the presence and/or quantity of one or more dopants.

2. The method of claim 1 , wherein the second composition is deposited according to a hydrothermal growth method.

3. The method of claim 1 , wherein the void extends from multiple surfaces of the crystal.

4. The method of claim 1 , wherein the second composition completely fills the void.

5. The method of claim 1 , further comprising forming one or more additional voids in the crystal and depositing compositions within the one or more additional voids, the compositions deposited within the one or more voids being the same or different from one another.

6. The method of claim 5 , wherein at least one of the one or more additional voids is surrounded by the deposited second composition.

7. The method of claim 5 , wherein the composition(s) deposited in the one or more additional voids is identical to the first composition or the second composition.

8. The method of claim 1 , further comprising cutting the crystal along a plane.

Assignees

• Univ Clemson
• Univ South Carolina

Inventors

• Kolis Joseph W
• Mcmillen Colin D

Classifications

• H01S3/0632

  Thin film lasers in which light propagates in the plane of the thin film · CPC title

• H01S2301/02

  ASE (amplified spontaneous emission), noise; Reduction thereof · CPC title

• H01S3/0612

  Non-homogeneous structure (H01S3/07 takes precedence) · CPC title

• C30B7/10

  by application of pressure, e.g. hydrothermal processes · CPC title

• H01S3/1611

  neodymium · CPC title