Silver copper indium gallium selenide reactive sputtering method and apparatus, and photovoltaic cell containing same

Patent metadata

Field	Value
Publication number	US-10156009-B2
Application number	US-201715403434-A
Country	US
Kind code	B2
Filing date	Jan 11, 2017
Priority date	Dec 5, 2016
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

A method of making a semiconductor structure includes a step of sputtering silver, copper, indium, and gallium on a substrate in an ambient including at least one chalcogen to deposit an alloy of silver, copper, indium, gallium, and at least one chalcogen. A film of the alloy can be deposited on a continuously moving substrate with a high throughput to form a p-type semiconductor absorber layer of a photovoltaic cell.

First claim

What is claimed is:

1. A method of making a semiconductor structure comprising a compositionally graded silver, copper, indium, gallium chalcogenide film on a substrate, the method comprising sequentially performing:
a first deposition process that deposits a first layer comprising copper, indium, gallium, and at least one chalcogen element on the substrate in a first sputtering zone;
a second deposition process that deposits a second layer by sputtering silver, copper, indium, and gallium over the first layer in a first chalcogen-containing ambient in a second sputtering zone, wherein a combination of the first layer and the second layer comprises a first compositionally graded alloy layer of silver, copper, indium, gallium, and the at least one chalcogen element; and
a third deposition process that deposits a third layer by reactively sputtering copper, indium, and gallium from a silver-free target over the second layer in a second chalcogen-containing ambient while inducing diffusion of silver atoms from the second layer into the third layer toward a growth surface in a third sputtering zone,
wherein the compositionally graded silver, copper, indium, gallium chalcogenide film is formed on the substrate by an end of the third deposition process;
the first layer is in a solid state in the first sputtering zone;
the second layer is in a semi-solid state containing a liquid phase and a solid phase in the second sputtering zone;
reactively sputtering the copper indium gallium selenide over the second layer during the third deposition process recrystallizes the second layer to convert the second layer into a solid layer;
the second deposition process is performed while the substrate is at an elevated temperature in a range from 550 degrees Celsius to 900 degrees Celsius;
the second layer is deposited at a deposition rate in a range from 200 nm per minute to 1 micron per minute;
the compositionally graded silver, copper, indium, gallium chalcogenide film is deposited as a polycrystalline material having an average grain size in a range from 1 micron to 4 microns;
a ratio of a total flux of copper atoms that impinge on the substrate to a total flux of indium atoms and gallium atoms that impinge on the substrate in the first sputtering zone is in a range from 0.5 to 1;
a ratio of a total flux of gallium atoms that impinge on the substrate to the total flux of indium atoms and gallium atoms that impinge on the substrate in the first sputtering zone is in a range from 0.5 to 0.9;
a ratio of a total flux of silver atoms that impinge on the substrate to a total flux of silver atoms and copper atoms that impinge on the substrate in the second sputtering zone is in a range from 0.05 to 0.5;
a ratio of the total flux of silver atoms and copper atoms that impinge on the substrate to a total flux of indium atoms and gallium atoms that impinge on the substrate in the second sputtering zone is in a range from 0.98 to 1.15;
a ratio of a total flux of gallium atoms that impinge on the substrate to the total flux of indium atoms and gallium atoms that impinge on the substrate in the second sputtering zone is in a range from 0.2 to 0.5;
a ratio of a total flux of copper atoms that impinge on the substrate to a total flux of indium atoms and gallium atoms that impinge on the substrate in the third sputtering zone is in a range from 0.1 to 0.97; and
a ratio of a total flux of gallium atoms that impinge on the substrate to the total flux of indium atoms and gallium atoms that impinge on the substrate in the third sputtering zone is in a range from 0.2 to 0.6.

2. The method of claim 1 , wherein each of the first chalcogen-containing ambient and the second chalcogen-containing ambient comprises a selenium-containing ambient and the compositionally graded silver, copper, indium, gallium chalcogenide film comprises a compositionally graded silver copper indium gallium selenide (ACIGS) layer.

3. The method of claim 2 , wherein the first deposition process reactively sputters a copper indium gallium selenide (CIGS) layer as the first layer over the substrate in the first sputtering zone using at least one first copper indium gallium target in a selenium containing ambient.

4. The method of claim 3 , wherein the second deposition process reactively sputters silver, copper, indium, and gallium over the first layer to form the second layer in the second sputtering zone using at least one second silver copper indium gallium target in a selenium containing ambient.

5. The method of claim 4 , wherein the at least one first copper indium gallium target located in the first sputtering zone is silver free.

6. The method of claim 4 , wherein the third deposition process reactively sputters copper indium gallium selenide over the second layer in the third sputtering zone using one or more silver free copper indium gallium targets as the silver free target in a selenium containing ambient.

7. The method of claim 6 , wherein the first, second and third sputtering zones are located in an enclosed chamber, and the substrate is continuously fed into the enclosed chamber and is continuously extracted out of the enclosed chamber.

8. The method of claim 7 , wherein:
the liquid phase permeates as a wave through grain boundaries of solid portions of the second layer and coalesces smaller grains into larger grains while reducing a number of lattice defects during the second deposition process; and
reactively sputtering the copper indium gallium selenide during the third deposition process comprises sputtering copper indium gallium selenide having a lower copper to Group III atomic ratio than that of the second layer as provided by the second deposition process to solidify liquid phase portions in the second layer as provided by the second deposition process during the third deposition process.

9. The method of claim 2 , wherein the compositionally graded silver, copper, indium, gallium chalcogenide film comprises a p-type semiconductor absorber layer of a photovoltaic cell.

10. The method of claim 9 , further comprising:
depositing a first electrode on the substrate prior to depositing the compositionally graded silver, copper, indium, gallium chalcogenide film;
depositing an n-type semiconductor material layer on the compositionally graded silver, copper, indium, gallium chalcogenide film; and
depositing a second electrode on the n-type semiconductor material layer to form the photovoltaic cell.

11. The method of claim 9 , wherein a copper plus silver to Group III atomic ratio is lower in a bottom portion and in a middle portion of the compositionally graded silver, copper, indium, gallium chalcogenide film than in a top portion of the compositionally graded silver, copper, indium, gallium chalcogenide film.

Assignees

• Beijing Apollo Ding Rong Solar Tech Co Ltd

Inventors

• Farshchi Rouin
• Mackie Neil

Classifications

• H01L31/18

  Electricity · mapped topic

• C23C14/562

  for coating elongated substrates · CPC title

• C23C14/568

  Transferring the substrates through a series of coating stations (C23C14/562 takes precedence) · CPC title

• H01L31/022425

  Electricity · mapped topic

• C23C14/541

  Heating or cooling of the substrates · CPC title