Method for functionalizing transition metal dichalcogenides

Patent metadata

Field	Value
Publication number	US-10155782-B2
Application number	US-201615288952-A
Country	US
Kind code	B2
Filing date	Oct 7, 2016
Priority date	Oct 7, 2015
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

Embodiments of the invention provide a lithium-free metal dichalcogenides functionalization method where a metal dichalcogenide including a surface of predominantly semiconducting 2H phase is reacted with an aryl diazonium salt by exposing at least a portion of transition metal dichalcogenide to the aryl diazonium salt in the absence of alkyl lithium or alkyl lithium. A substantial portion of the reaction of the at least one aryl diazonium salt with the at least one transition metal dichalcogenide occurs with the semiconducting 2H phase. The aryl diazonium salt can be 4-nitrobenzenediazonium tetrafluoroborate or 4-carboxybenzene diazonium tetrafluoroborate, and the metal dichalcogenide can be MoS2. The semiconducting 2H phase of the transition metal dichalcogenide is derived directly from mechanical exfoliation such as mechanical cleaving and/or sonication.

First claim

The invention claimed is:

1. A method comprising:
providing at least one bulk transition metal dichalcogenide crystal;
in the absence of chemical exfoliation, mechanically exfoliating the at least one bulk transition metal dichalcogenide crystal to produce
at least one transition metal dichalcogenide with exfoliated surfaces of entirely semiconducting 2H phase;
without first converting the semiconducting 2H phase to a metallic 1T phase by exposure to an alkyl lithium compound, reacting at least a portion of the semiconducting 2H phase of the at least one transition metal dichalcogenide with the at least one aryl diazonium salt by exposing at least a portion of the at least one transition metal dichalcogenide to at least one aryl diazonium salt in the absence of an alkyl lithium; and
wherein the reaction of the at least one aryl diazonium salt with the at least one transition metal dichalcogenide occurs with the semiconducting 2H phase to produce at least one aryl diazonium functionalized transition metal dichalcogenide.

2. The method of claim 1 , wherein the at least one aryl diazonium salt is 4-nitrobenzenediazonium tetrafluoroborate.

3. The method of claim 1 , wherein the at least one aryl diazonium salt is 4-carboxybenzenediazonium tetrafluoroborate.

4. The method of claim 1 , wherein the semiconducting 2H phase of the at least one transition metal dichalcogenide is derived directly using sonication of a solution of the at least one transition metal dichalcogenide.

5. The method of claim 1 , wherein the at least one transition metal dichalcogenide is MoS 2 .

6. The method of claim 5 , wherein the MoS 2 reacts with the at least one aryl diazonium salt without prior conversion of the semiconducting 2H phase to metallic 1T phase.

7. The method of claim 1 , wherein the at least one aryl diazonium salt comprises an aqueous solution of the aryl diazonium salt.

8. The method of claim 7 , wherein the at least one transition metal dichalcogenide is dispersed in the aqueous solution.

9. The method of claim 8 , wherein the at least one transition metal dichalcogenide is dispersed with at least one surfactant.

10. The method of claim 9 , wherein the at least one surfactant is sodium dodecyl sulfate.

Assignees

• Univ Arizona State

Inventors

• Wang Qing Hua
• Chu Ximo
• Green Alexander
• Yousaf Ahmed

Classifications

• C07F11/005 Primary

  compounds without a metal-carbon linkage · CPC title

• C09K11/02

  Use of particular materials as binders, particle coatings or suspension media therefor · CPC title

• C09K11/06

  containing organic luminescent materials · CPC title

• C09K11/681

  Chalcogenides · CPC title

• C09K2211/183

  of the refractory metals, i.e. Ti, V, Cr, Zr, Nb, Mo, Hf, Ta or W · CPC title