Method for manufacturing light-emitting device

Patent metadata

Field	Value
Publication number	US-10153410-B2
Application number	US-201815899304-A
Country	US
Kind code	B2
Filing date	Feb 19, 2018
Priority date	Apr 6, 2016
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

A method of manufacturing a light-emitting device includes flip-chip mounting a plurality of light-emitting elements on a substrate separately from each other. A light-transmissive member is bonded on the plurality of light-emitting elements. The light-transmissive member includes a matrix and a manganese-activated fluoride fluorescent material that functions as a wavelength conversion member. A lateral surface of the light-transmissive member is exposed between at least one pair of the plurality of light-emitting elements that are adjacent with each other. A light-reflective covering member is provided on the substrate to cover the lateral surface and a top surface of the light-transmissive member. A portion of the light-reflective covering member that is located on a top surface of the light-reflective covering member is removed to expose the light-transmissive member. The substrate and the light-reflective covering member are cut to yield individual pieces of light-emitting devices.

First claim

What is claimed is:

1. A method of manufacturing a light-emitting device, the method comprising:
flip-chip mounting a plurality of light-emitting elements on a substrate separately from each other;
bonding a light-transmissive member on the plurality of light-emitting elements, the light-transmissive member comprising a matrix and a manganese-activated fluoride fluorescent material that functions as a wavelength conversion member;
exposing a lateral surface of the light-transmissive member between at least one pair of the plurality of light-emitting elements that are adjacent with each other;
providing a light-reflective covering member on the substrate to cover the lateral surface and a top surface of the light-transmissive member;
removing a portion of the light-reflective covering member that is located on a top surface of the light-reflective covering member to expose the light-transmissive member; and
cutting the substrate and the light-reflective covering member to yield individual pieces of light-emitting devices.

2. The method according to claim 1 , wherein the light-transmissive member further comprises a β-SiAlON fluorescent material.

3. The method according to claim 1 , wherein the light-transmissive member includes a layer of the matrix and the β-SiAlON fluorescent material, a layer of the matrix and the manganese-activated fluoride fluorescent material, and a layer of the matrix that are stacked with each other.

4. The method according to claim 1 , wherein the matrix is a silicone resin or a modified silicone resin.

5. The method according to claim 1 , wherein when the portion of the light-reflective covering member that is located on the top surface of the light-reflective covering member is removed, a portion of the light-transmissive member is also removed.

6. The method according to claim 1 , wherein each of the light-emitting devices includes two or more of the plurality of light-emitting elements.

7. The method according to claim 1 , wherein an emission peak wavelength of each light-emitting element is equal to or more than 400 nm and equal to or less than 530 nm.

Assignees

• Nichia Corp

Inventors

• Hashimoto Toru

Classifications

• H10W90/00

  Package configurations · CPC title

• H10W72/0198

  batch processes · CPC title

• H01L33/505

  Electricity · mapped topic

• H01L33/50

  Electricity · mapped topic

• C09K11/617

  Silicates · CPC title