Semiconductor device and method for forming a semiconductor device

Patent metadata

Field	Value
Publication number	US-10153339-B2
Application number	US-201715708209-A
Country	US
Kind code	B2
Filing date	Sep 19, 2017
Priority date	Sep 23, 2016
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

A semiconductor device includes a common doping region located within a semiconductor substrate of the semiconductor device. The common doping region includes a first portion. A maximal doping concentration within the first portion is higher than 1·1015 cm−3. The common doping region includes a second portion. A minimal doping concentration within the second portion is lower than 50% of the maximal doping concentration within the first portion of the common doping region. The common doping region includes a third portion. A minimal doping concentration within the third portion is more than 30% higher than the minimal doping concentration within the second portion. The second portion of the common doping region is located vertically between the first portion of the common doping region and the third portion of the common doping region.

First claim

What is claimed is:

1. A semiconductor device, comprising:
a common doping region located within a semiconductor substrate of the semiconductor device, the common doping region comprising a first portion, a second portion and a third portion,
wherein a maximal doping concentration within the first portion is higher than 1·10 15 cm −3 ,
wherein a minimal doping concentration within the second portion is lower than 50% of the maximal doping concentration within the first portion of the common doping region,
wherein a minimal doping concentration within the third portion is more than 30% higher than the minimal doping concentration within the second portion,
wherein at least a part of the second portion of the common doping region is located vertically between the first portion of the common doping region and the third portion of the common doping region,
wherein a doping concentration within the second portion increases vertically towards a back side of the semiconductor substrate,
wherein donors causing the vertical increase of the doping concentration within the second portion are hydrogen-related donors.

2. The semiconductor device of claim 1 , wherein the first portion of the common doping region is located at a front side surface of the semiconductor substrate.

3. The semiconductor device of claim 1 , wherein the first portion of the common doping region has a thickness of more than 400 nm.

4. The semiconductor device of claim 1 , wherein the first portion of the common doping region has a thickness of less than 5 μm.

5. The semiconductor device of claim 1 , wherein the first portion vertically extends from a front-side surface of the semiconductor substrate to a local minimum doping concentration within the common doping region, wherein the second portion vertically extends from the local minimal doping concentration to the third portion, wherein a doping concentration at the border between the second portion and the third portion is 30% higher than the local minimum doping concentration, and wherein the third portion vertically extends from the border between the second portion and the third portion towards a back-side surface of the semiconductor substrate.

6. The semiconductor device of claim 1 , wherein the first portion of the common doping region has a lateral width of at least 5 μm.

7. The semiconductor device of claim 1 , wherein the first portion of the common doping region is at least partially located in an edge termination region of the semiconductor device.

8. The semiconductor device of claim 1 , wherein the first portion laterally extends over more than 50% of an edge termination region of the semiconductor device.

9. The semiconductor device of claim 1 , wherein an edge termination region of the semiconductor device comprises a channel stopper region laterally located between the first portion of the common region and an edge of the semiconductor device.

10. The semiconductor device of claim 1 , wherein the first portion laterally surrounds an active area of the semiconductor device.

11. The semiconductor device of claim 1 , wherein the minimal doping concentration within the second portion is lower than 3·10 14 cm −3 .

12. The semiconductor device of claim 1 , wherein a doping concentration within the third portion of the common doping region is larger than 4·10 12 cm −3 .

13. The semiconductor device of claim 1 , wherein a doping concentration within the third portion of the common doping region is smaller than 1·10 15 cm −3 .

14. The semiconductor device of claim 1 , wherein the common doping region comprises a drift region of an electrical element arrangement of the semiconductor device.

15. The semiconductor device of claim 14 , wherein a vertical doping profile of the third portion differs from a vertical doping profile within a vertical part of the drift region located at the same depth range within a cell region of the semiconductor substrate as the third portion of the common doping region by less than 20% of a maximal doping concentration within the third portion of the common doping region.

16. The semiconductor device of claim 1 , further comprising a transistor arrangement comprising a body region, wherein the body region extends at least 20% further into the semiconductor substrate than the first portion of the common doping region, and wherein a doping concentration within the body region is at least 20% higher than a doping concentration within the first portion.

17. The semiconductor device of claim 1 , wherein an electrical element arrangement of the semiconductor device has a breakdown voltage of more than 10V.

18. A method for forming a semiconductor device, the method comprising:
forming a first portion of a common doping region located within a semiconductor substrate of the semiconductor device, a maximal doping concentration within the first portion being higher than 1·10 15 cm −3 ;
forming a second portion of the common doping region, a minimal doping concentration within the second portion being lower than 50% of the maximal doping concentration within the first portion of the common doping region;
forming a third portion of the common doping region, a minimal doping concentration within the third portion being more than 30% higher than the minimal doping concentration within the second portion, at least a part of the second portion of the common doping region being located vertically between the first portion of the common doping region and the third portion of the common doping region; and
forming a doping region of an elegy element arrangement in the semiconductor substrate,
wherein a doping concentration within the second portion increases vertically towards a back side of the semiconductor substrate,
wherein donors causing the vertical increase of the doping concentration within the second portion are hydrogen-related donors.

Assignees

• Infineon Technologies Ag

Inventors

• Voss Stephan
• Breymesser Alexander
• Schulze Hans-Joachim
• Gawlina-Schmidl Yvonne

Classifications

• H10P95/90

  Thermal treatments, e.g. annealing or sintering · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title

• H10P30/208

  of electrically inactive species · CPC title

• H10P30/206

  into Group III-V semiconductors · CPC title

• H10P30/204

  into Group IV semiconductors · CPC title