Organic surface treatments for display glasses to reduce ESD

Patent metadata

Field	Value
Publication number	US-10153268-B2
Application number	US-201515502535-A
Country	US
Kind code	B2
Filing date	Aug 7, 2015
Priority date	Aug 12, 2014
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

Glass substrates comprising an A-side upon which silicon thin film transistor devices can be fabricated and a B-side having a substantially homogeneous organic film thereon are described. The organic film includes a moiety that reduces voltage generation by contact electrification or triboelectrification. Methods of manufacturing the glass substrates and example devices incorporating the glass substrates are also described.

First claim

What is claimed is:

1. A glass substrate comprising:
an A-side upon which silicon thin film transistor devices can be fabricated;
a B-side comprising a substantially homogeneous organic film thereon, the organic film including a moiety that reduces voltage generation by contact electrification or triboelectrification; and
wherein the glass substrate comprises boroaluminosilicate and has a density less than 2.45 g/cm 3 and wherein the organic film is deposited onto the B-side of the glass during an aqueous washing process.

2. The glass substrate of claim 1 , wherein the organic film comprises a compound selected from the group consisting of an organic compound that substantially reduces the hydrophilic character of the B-side, an organic compound containing an amine group or other cationic group that can be protonated, an organic compound that reduces the glass substrate B-side surface coefficient of friction, an organic compound that comprising an organosilane that increases an amount of surface electron mobility, and combinations thereof.

3. The glass substrate of claim 1 , wherein the organic film contains one or more of a long chain alkyl group having at least two carbons, an amine or an aromatic ring that provides mobile electrons.

4. The glass substrate of claim 1 , wherein the organic film comprises one or more of an alkyl ammonium-terminated silane coupling agent having an alkyl group with a length greater than or equal to two carbons, an aromatic compound or a long chain alkyl group with a length greater than or equal to two carbons.

5. The glass substrate of claim 4 , wherein the alkyl group length is in a range of about 16 to about 20 carbons.

6. The glass substrate of claim 1 , wherein the organic film comprises one or more of 3-aminopropyltriethoxysilane (GAPS), poly(allylamine) or octadecyldimethyl(3-trimethoxysilylpropyl)ammonium chloride.

7. The glass substrate of claim 1 , wherein the log of surface resistivity is less than about 16.5 Ohm/square at all relative humidities greater than or equal to about 10%.

8. The glass substrate of claim 1 , wherein the B-side has a zeta potential measured with a 20 mM KCl electrode in a range from about −30 mV to about 40 mV at neutral pH at room temperature.

9. The glass substrate of claim 1 , wherein the B-side has a coefficient of friction at least about 10% less than an equivalent glass substrate without the organic film measured using a sapphire ball at a normal force of 25 nN at room temperature.

10. The glass substrate of claim 1 , wherein the B-side has a water contact angle greater than about 25 degrees.

11. A method of manufacturing a glass article, the method comprising:
forming a glass substrate comprising an A-side and a B-side, the A-side upon which electronic devices can be fabricated, the glass substrate comprising boroaluminosilicate and having a density less than 2.45 g/cm 3 ; and
forming a substantially homogeneous organic film on the B-side of the glass substrate while washing the B-side of the glass using a wet chemical process, the organic film including a moiety that reduces voltage generation by contact electrification or triboelectrification.

12. A method of making top gated thin film transistors directly onto boroaluminosilicate glass substrates, the method comprising:
providing a glass substrate comprising an A-side upon which the transistors can be formed and a B-side opposite the A-side, the B-side including an organic film deposited thereon during an aqueous washing step, the organic film including a moiety that reduces voltage generation by contact electrification or triboelectrification;
forming a silicon coating directly onto the A-side;
patterning the silicon coating to form a base of the thin film transistor; and
continuing fabrication steps necessary to fabricate the thin film transistor.

13. The method of claim 12 , wherein the organic film comprises a compound selected from the group consisting of an organic compound that substantially reduces the hydrophilic character of the B-side, an organic compound containing an amine group or other cationic group that can be protonated, an organic compound that reduces the display glass substrate B-side surface coefficient of friction, an organic compound that comprises an organosilane that increases an amount of surface electron mobility, and combinations thereof.

14. The method of claim 12 , wherein the organic film contains one or more of a long chain alkyl group having at least two carbons, an amine or an aromatic ring that provides mobile electrons.

15. The method of claim 12 , wherein the organic film comprises one or more of an alkyl ammonium-terminated silane coupling agent having an alkyl group with a length greater than or equal to two carbons, an aromatic compound or a long chain alkyl group with a length greater than or equal to two carbons.

16. The method of claim 12 , wherein the organic film comprises one or more of 3-aminopropyltriethoxysilane (GAPS), poly(allylamine) or octadecyldimethyl(3-trimethoxysilylpropyl)ammonium chloride.

17. The method of claim 12 , wherein the B-side of the glass substrate has a zeta potential in a range from about −30 mV to about 40 mV at neutral pH.

Assignees

• Corning Inc

Inventors

• Hamilton James Patrick
• Manley Robert George
• Mis Jonathan Michael
• Walczak Wanda Janina

Classifications

• C03C2218/365

  Coating different sides of a glass substrate · CPC title

• C03C17/30 Primary

  with silicon-containing compounds · CPC title

• C03C17/28 Primary

  with organic material (C03C17/34, C03C17/44 take precedence) · CPC title

• C03C2218/111

  by dipping, immersion · CPC title

• H10P14/683

  carbon-based polymeric organic materials, e.g. polyimides, poly cyclobutene or PVC · CPC title