Hardmask composition and method of forming patterning by using the hardmask composition

Patent metadata

Field	Value
Publication number	US-10153163-B2
Application number	US-201715611935-A
Country	US
Kind code	B2
Filing date	Jun 2, 2017
Priority date	Jul 25, 2014
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

Example embodiments relate to a hardmask composition and/or a method of forming a fine pattern by using the hardmask composition, wherein the hardmask composition includes at least one of a two-dimensional layered nanostructure and a precursor thereof, and a solvent, and an amount of the at least one of a two-dimensional layered nanostructure and the precursor is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition.

First claim

What is claimed is:

1. A method of forming a pattern, the method comprising:
forming a to-be-etched layer on a substrate;
forming a hardmask composition on the to-be-etched layer, the hardmask composition including at least one of a two-dimensional layered nanostructure and a precursor thereof and a solvent, wherein an amount of the at least one of the two-dimensional layered nanostructure and the precursor thereof is about 0.01 part to about 40 parts by weight based on 100 parts by weight of the hardmask composition;
forming a photoresist layer on the hardmask composition;
forming a hardmask pattern having a two-dimensional layered nanostructure on the to-be-etched layer by etching the two-dimensional layered nanostructure using the photoresist layer as an etching mask; and
etching the to-be-etched layer by using the hardmask pattern as an etching mask; wherein:
the two-dimensional layered nanostructure is at least one of a hexagonal boron nitride derivative, a metal chalcogenide-based material, and a metal oxide,
the hexagonal boron nitride derivative including at least one of a hexagonal boron nitride (h-BN) and a hexagonal boron carbonitride (h-BxCyNz), where x+y+z=3,
the metal chalcogenide-based material including one metal element from tungsten sulfide (WS 2 ) and molybdenum sulfide (MoS 2 ), and
the metal oxide including at least one of MoO 3 , WO 3 , and V 2 O 5 .

2. The method of claim 1 , wherein forming the hardmask comprises coating a top of the to-be-etched layer with the hardmask composition.

3. The method of claim 2 , wherein heat-treating is performed during or after the coating of the to-be-etched layer with the hardmask composition.

4. The method of claim 1 , wherein forming the hardmask comprises depositing a precursor of the two-dimensional layered nanostructure.

5. The method of claim 1 , wherein a thickness of the hardmask is in a range of about 10 nm to about 10,000 nm.

6. The method of claim 1 , wherein forming the hardmask comprises one of spin coating, air spraying, electrospraying, dip coating, spray coating, doctor blade coating, and bar coating.

7. The method of claim 1 , wherein the forming the photoresist layer comprises forming the photoresist layer directly on the hardmask composition.

8. The method of claim 1 , wherein:
a thickness of the two-dimensional layered nanostructure is in a range of about 0.34 nm to about 100 nm, and
the two-dimensional layered nanostructure includes one layer to three hundred layers.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Shin Hyeonjin
• Kim Sangwon
• Park Seongjun

Classifications

• H10P14/3448

  Delta-doping · CPC title

• H10P14/3436

  being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds · CPC title

• H10P14/3434

  being oxide semiconductor materials (Group IIB-VIA semiconductor materials H10P14/3424) · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/265

  using solutions · CPC title