Method for fine line manufacturing

US10151980B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10151980-B2
Application numberUS-201515523987-A
CountryUS
Kind codeB2
Filing dateDec 9, 2015
Priority dateDec 16, 2014
Publication dateDec 11, 2018
Grant dateDec 11, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A novel method for the manufacturing of fine line circuitry on a transparent substrates is provided, the method comprises the following steps in the given order providing a transparent substrate, depositing a pattern of light-shielding activation layer on at least a portion of the front side of said substrate, placing a photosensitive composition on the front side of the substrate and on the pattern of light-shielding activation layer, photo-curing the photosensitive composition from the back side of the substrate with a source of electromagnetic radiation, removing any uncured remnants of the photosensitive composition; and thereby exposing recessed structures and deposition of at least one metal into the thus formed recessed structures whereby a transparent substrate with fine line circuitry thereon is formed. The method allows for very uniform and fine line circuitry with a line and space dimension of 0.5 to 10 μm.

First claim

Opening claim text (preview).

The invention claimed is: 1. Process for the manufacturing of fine line circuitry on a transparent substrate, the process comprises the following steps in the given order (i) providing a transparent substrate having a front side and a back side; (ii) providing a pattern of light-shielding activation layer on the front side of said substrate; wherein the pattern of light-shielding activation layer is provided by the steps (ii.a) to (ii.c), in the following order: (ii.a) depositing a treatment solution on the front side of the substrate, wherein the treatment solution contains carbon-based conductive, non-transparent particles having a size in the range of 0.1 nm to 1 μm; (ii.b) selectively curing at least one portion of the deposited treatment solution on the front side of said substrate with a laser and thereby forming a pattern of light-shielding activation layer; and (ii.c) removing any uncured remnants of the treatment solution from the substrate; (iii) placing a photosensitive composition on the front side of the substrate including the pattern of light-shielding activation layer; (iv) photo-curing the photosensitive composition from the back side of the substrate with a source of electromagnetic radiation; (v) removing any uncured remnants of the photosensitive composition; and thereby selectively exposing recessed structures on the pattern of light-shielding activation layer; and (vi) depositing of at least one metal or metal alloy into the thus formed recessed structures by an electroless plating process. 2. The process according to claim 1 , characterized in that the treatment solution is deposited by a printing method. 3. The process according to claim 1 , characterized in that height of the pattern of light-shielding activation layer ranges from 1 nm to 1 μm. 4. The process according to claim 1 , characterized in that the substrate is selected from the group consisting of borosilicate glass, quartz glass, silica glass, fluorinated glass, polyimide, polyethylene terephthalate, polyethylene, polypropylene, polyvinyl acetate, polyvinyl alcohol and mixtures and composites of the aforementioned. 5. The process according to claim 1 , characterized in that the photosensitive composition is selected from dry films, liquid resists, printable resists and photo-imageable dielectrics. 6. The process according to claim 5 , characterized in that the photosensitive composition is a dry film. 7. The process according to claim 1 , characterized in that the layer formed by the photosensitive composition has a thickness 0.1 to 20 μm. 8. The process according to claim 1 , characterized in that the metal or metal alloy deposited in step (vi) is selected from copper and copper alloy. 9. The process according to claim 1 , characterized in that the process comprises a further step (vii) to remove a photo-cured resin layer formed in step (iv) after the deposition of the at least one metal or metal alloy into the recessed structures and thereby exposing the formed metal or metal alloy deposit. 10. The process according to claim 1 characterized in that a refractive index of the photosensitive composition n P is substantially the same as a refractive index of the transparent substrate n T . 11. The process according to claim 1 , characterized in that the source of electromagnetic radiation is a source of light which allows for a high degree of collimation of light. 12. The process according to claim 1 , characterized in that fine line circuitry made of metal or metal alloy line sizes having a line width of 0.5 μm to 10 μm is manufactured. 13. The process according to claim 1 , characterized in that the process comprises a further step (vii) to remove a photo-cured resin layer formed in step (iv) after the deposition of the at least one metal or metal alloy into the recessed structures and thereby exposing the formed metal or metal alloy deposit.

Assignees

Inventors

Classifications

  • Activating {or accelerating or sensitising with palladium or other noble metal} · CPC title

  • using masks · CPC title

  • Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure · CPC title

  • G03F7/091Primary

    characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

  • having more than one photosensitive layer (G03F7/075 takes precedence) · CPC title

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What does patent US10151980B2 cover?
A novel method for the manufacturing of fine line circuitry on a transparent substrates is provided, the method comprises the following steps in the given order providing a transparent substrate, depositing a pattern of light-shielding activation layer on at least a portion of the front side of said substrate, placing a photosensitive composition on the front side of the substrate and on the pa…
Who is the assignee on this patent?
Atotech Deutschland Gmbh
What technology area does this patent fall under?
Primary CPC classification G03F7/091. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 11 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).