CMP slurry composition for polishing copper and polishing method using the same

Patent metadata

Field	Value
Publication number	US-10150890-B2
Application number	US-201515525321-A
Country	US
Kind code	B2
Filing date	Dec 7, 2015
Priority date	Sep 8, 2015
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

Disclosed herein is a CMP slurry composition for polishing copper. The CMP slurry composition includes: polishing particles; and deionized water, wherein the polishing particles include inorganic particles and organic particles, and both the inorganic particles and the organic particles have a positive zeta potential. A polishing method comprising polishing a copper wire using the CMP slurry composition also be provided.

First claim

The invention claimed is:

1. A chemical mechanical planarization slurry composition for polishing copper, comprising:
about 0.01 wt % to about 20 wt % of polishing particles;
about 0.01 wt % to about 10 wt % of an oxidant;
about 0.001 wt % to about 10 wt % of a corrosion inhibitor;
about 0.01 wt % to about 20 wt % of a complexing agent; and
a balance of deionized water,
wherein the polishing particles comprise inorganic particles and organic particles, and
both the inorganic particles and the organic particles having a positive zeta potential.

2. The chemical mechanical planarization slurry composition according to claim 1 , wherein the zeta potential ranges from about +1 mV to about +100 mV.

3. The chemical mechanical planarization slurry composition according to claim 1 , wherein the chemical mechanical planarization slurry composition has a pH of 5 to 9.

4. The chemical mechanical planarization slurry composition according to claim 1 , wherein the polishing particles have an average particle diameter (D50) of about 10 nm to about 500 nm, and average particle diameter (D50) of the organic particles is greater than average particle diameter (D50) of the inorganic particles.

5. The chemical mechanical planarization slurry composition according to claim 1 , wherein a ratio D2/D1 of an average particle diameter (D50) ratio of the organic particles (D2) to an average particle diameter (D50) of the inorganic particles (D1) is greater than about 1 and less than or equal to about 6.

6. The chemical mechanical planarization slurry composition according to claim 1 , wherein the inorganic particles are silica (SiO 2 ), alumina (Al 2 O 3 ), zirconia, ceria, or a mixture thereof.

7. The chemical mechanical planarization slurry composition according to claim 1 , wherein the organic particles are polystyrene, poly(meth)acrylate, polyvinyl chloride, polyacetal, polyester, polyamide, polyimide, or a copolymer thereof.

8. The chemical mechanical planarization slurry composition according to claim 1 , wherein a cationic initiator is chemically bonded to surfaces of the organic particles.

9. The chemical mechanical planarization slurry composition according to claim 8 , wherein the cationic initiator comprises at least one AIBN cationic initiator selected from among 2,2′-azobis(2-methylpropionamidine)dihydrochloride, 2,2′-azobis[2-(2-imidazoline-2-yl)propane]dihydrochloride, 2,2′-azobis[2-(2-imidazoline-2-yl)propane]disulfate dihydrate, 2,2′-azobis[N-(2-carboxyethyl)-2-methylpropionamide], 2,2′-azobis[2-(3,4,5,6-tetrahydropyrimidine-2-yl)propane]dihydrochloride, 2,2′-azobis{2-[1-(2-hydroxyethyl)-2-yl]propane}dihydrochloride, 2,2′-azobis {2-methyl-N-[2-(hydroxybutyl)]propionamide}, 2,2′-azobis[2-methyl-N-[2-(hydroxyethyl)propionamide], and 2,2′-azobis(N-butyl-2-methylpropionamide).

10. The chemical mechanical planarization slurry composition according to claim 1 , further comprising:
a pH regulator, a surfactant, a dispersant, a modifier, or a combination thereof.

11. The chemical mechanical planarization slurry composition according to claim 1 , wherein the polishing particles comprise the inorganic particles and the organic particles in a weight ratio of about 1:0.1 to about 1:0.5.

12. A polishing method comprising: polishing a copper wire using the chemical mechanical planarization slurry composition according to claim 1 .

Assignees

• Samsung Sdi Co Ltd

Inventors

• Jeong Jeong Hwan
• Jung Young Chul
• Kang Dong Hun
• Kim Tae Wan
• Noh Jong Il
• Hong Chang Ki

Classifications

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P52/402

  of semiconductor materials · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1436

  Composite particles, e.g. coated particles · CPC title

• C09K3/1409 Primary

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title