Micro-electro-mechanical device and manufacturing process thereof

US10150666B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10150666-B2
Application numberUS-201715602760-A
CountryUS
Kind codeB2
Filing dateMay 23, 2017
Priority dateNov 19, 2015
Publication dateDec 11, 2018
Grant dateDec 11, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

First claim

Opening claim text (preview).

The invention claimed is: 1. A micro-electro-mechanical device, comprising: a monolithic body of semiconductor material; a first buried cavity in the monolithic body of semiconductor material; a sensitive region in the monolithic body facing the first buried cavity; and a decoupling trench extending into the monolithic body as far as the first buried cavity, the decoupling trench decoupling the sensitive region from a peripheral portion of the monolithic body and forming the sensitive region. 2. The device according to claim 1 , wherein the monolithic body includes a second buried cavity in the sensitive region, the second buried cavity overlapping the first buried cavity. 3. The device according to claim 1 , further comprising a membrane over the sensitive region, the membrane having a perimeter that is coupled to the sensitive region. 4. The device according to claim 3 , wherein the membrane is spaced apart from the sensitive region by a cavity. 5. The device according to claim 1 , wherein the decoupling trench has a spiral shape that extends around an entire perimeter of the sensitive region. 6. The device according to claim 5 , wherein the decoupling trench has a first end portion and a second end portion, the first end portion and the second end portion extending along a same side of the sensitive region. 7. The device according to claim 1 , further comprising a cap element coupled to a surface of the peripheral portion of the monolithic body. 8. A micro-electro-mechanical device, comprising: a monolithic body of semiconductor material; a buried cavity in the monolithic body of semiconductor material; a sensitive region in the monolithic body covering the buried cavity; and a movable element including a central portion and a perimeter portion, the perimeter portion coupled to the sensitive region, the central portion of the movable element being separated from the sensitive region by a second cavity. 9. The device according to claim 8 , wherein the movable element is a MEMS inertial sensor that moves in response to acceleration. 10. The device according to claim 8 , comprising a decoupling trench having a spiral shape that separates the sensitive region from a peripheral portion of the monolithic body. 11. The device according to claim 10 , wherein the decoupling trench has a first end portion and a second end portion, the first end portion and the second end portion extending along a same side of the sensitive region. 12. The device according to claim 10 , comprising a cap coupled to the peripheral portion of the monolithic body, the cap forming a cavity with the monolithic body, the movable element being located in the cavity. 13. The device according to claim 8 , wherein monolithic body includes a through opening that places the buried cavity in fluid communication with an environment that is external to the micro-electro-mechanical device. 14. An electronic apparatus comprising: a microprocessor; and a micro-electro-mechanical device including: a monolithic body of semiconductor material; a buried cavity in the monolithic body of semiconductor material; a sensitive region in the monolithic body facing the buried cavity; and a decoupling trench extending into the monolithic body as far as the buried cavity, the decoupling trench decoupling the sensitive region from a peripheral portion of the monolithic body and forming the sensitive region. 15. The electronic device according to claim 14 , wherein the electronic apparatus is at least one of a sphygmomanometer, a household apparatus, a mobile phone, a personal digital assistant, a notebook, and a pressure measuring apparatus. 16. The electronic device according to claim 14 , wherein the cap is coupled to the first face of the monolithic body and integrates an application-specific integrated circuit. 17. The electronic device according to claim 14 , wherein the cap is coupled to the second face of the monolithic body and integrates an application-specific integrated circuit. 18. The electronic device according to claim 17 , wherein the monolithic body includes a through hole at the second face that places the buried cavity in fluid communication with an environment that is external to the micro-electro-mechanical device.

Assignees

Inventors

Classifications

  • Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function · CPC title

  • Transfer and j oin technology, i.e. forming the electronic processing unit and the micromechanical structure on separate substrates and joining the substrates · CPC title

  • the reflecting means being moved or deformed by piezoelectric means · CPC title

  • Sensors · CPC title

  • Structural features, others than packages, for protecting a device against environmental influences (B81C1/00777 takes precedence) · CPC title

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What does patent US10150666B2 cover?
A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The dec…
Who is the assignee on this patent?
St Microelectronics Srl
What technology area does this patent fall under?
Primary CPC classification B81B3/0072. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Dec 11 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).