Power converter having switching elements formed of unipolar devices using a wideband gap semiconductor

Patent metadata

Field	Value
Publication number	US-10148197-B2
Application number	US-86559009-A
Country	US
Kind code	B2
Filing date	Jan 21, 2009
Priority date	Jan 31, 2008
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

An inverter circuit ( 120 ) is configured so as to perform synchronous rectification by six switching elements ( 130 ). The switching element ( 130 ) is formed of an unipolar device (SiC MOSFET in this case) using a wideband gap semiconductor. The inverter circuit ( 120 ) uses the body diode ( 131 ) of SiC MOSFET ( 130 ) as a freewheeling diode during synchronous rectification.

First claim

The invention claimed is:

1. A power converter configured so as to perform synchronous rectification by a switching element, wherein
the switching element is comprised of a unipolar device using a wideband gap semiconductor and including a body diode,
the body diode of the unipolar device is used as a freewheeling diode, without the need of providing a separate external freewheeling diode connected in parallel to the unipolar device,
the unipolar device turns on when a reverse current flows through the body diode used as the freewheeling diode, so that the reverse current flows through the unipolar device side to thereby perform synchronous rectification,
power is converted from direct current to alternating current, or from alternating current to alternating current,
the body diode turns on if a voltage is increased up to a predetermined amount or more when synchronous rectification is carried out,
a turn-on voltage of the body diode is higher than an ON voltage of the unipolar device,
the body diode does not turn on until a voltage of the body diode in a forward direction exceeds the turn-on voltage of the body diode,
an on-voltage of a body of the unipolar device is smaller than the turn-on voltage of the body diode in a whole range where the power converter is used, and
SiC is used as the wideband gap semiconductor.

2. The power converter of claim 1 , wherein the power converter is used for an air conditioner.

3. The power converter of claim 2 , wherein a relationship between an effective current value (I rms ) and an on-resistance (R on ) of the switching element under an intermediate load condition of heating operation of the air conditioner, satisfies: I rms <0.9/R on .

4. The power converter of claim 1 , wherein the unipolar device is a MOSFET.

5. The power converter of claim 1 , wherein, of an inverter, converter, matrix converter and boosting chopper circuit which are constructed to perform synchronous rectification by the switching element, at least one is included.

6. The power converter of claim 1 , wherein a turn-on voltage of the body diode of the unipolar device is about 3 volts.

Assignees

• Maeda Toshiyuki
• Sekimoto Morimitsu
• Hibino Hiroshi
• Daikin Ind Ltd

Inventors

• Maeda Toshiyuki
• Sekimoto Morimitsu
• Hibino Hiroshi

Classifications

• H10P10/00

  Bonding of wafers, substrates or parts of devices · CPC title

• H02M7/5387 Primary

  in a bridge configuration · CPC title

• H02M2001/0051

  Electricity · mapped topic

• Y02B70/1491

  Cross-Sectional Technologies · mapped topic

• Y02B70/1408

  Cross-Sectional Technologies · mapped topic