Distributed Bragg reflector tunable laser diode

Patent metadata

Field	Value
Publication number	US-10148067-B2
Application number	US-201715712874-A
Country	US
Kind code	B2
Filing date	Sep 22, 2017
Priority date	Jan 19, 2017
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

Provided is a distributed Bragg reflector tunable laser diode including a substrate provided with a gain section having an active waveguide from which a gain of laser light is obtained and a distributed reflector section having a passive waveguide connected to the active waveguide, wherein the distributed reflector section includes gratings disposed on or under the passive waveguide, a current injection electrode disposed on the passive waveguide and configured to provide a current into the passive waveguide to electrically tune a wavelength of the laser light, and a heater electrode disposed on the current injection electrode and configured to heat the passive waveguide to thermally tune the wavelength of the laser light, wherein the gratings, the current injection electrode, and the heater electrode vertically overlap each other.

First claim

What is claimed is:

1. A distributed Bragg reflector tunable laser diode comprising:
a substrate including a gain section which has an active waveguide to get gain of a laser light and a distributed reflector section which has a passive waveguide connected to the active waveguide,
wherein the distributed reflector section comprises:
gratings disposed on or under the passive waveguide;
a current injection electrode disposed on the passive waveguide and configured to provide a current into the passive waveguide to electrically tune a wavelength of the laser light; and
a heater electrode disposed on the current injection electrode and configured to heat the passive waveguide to thermally tune the wavelength of the laser light,
wherein the gratings, the current injection electrode, and the heater electrode vertically overlap each other.

2. The distributed Bragg reflector tunable laser diode of claim 1 , wherein the gain section further comprises:
a first lower electrode under the active waveguide;
a first lower clad between the first lower electrode and the active waveguide;
a first upper clad disposed on the active waveguide; and
a first upper electrode disposed on the first upper clad.

3. The distributed Bragg reflector tunable laser diode of claim 2 , wherein the distributed reflector section further comprises:
a second lower clad connected to the first lower clad and surrounding the gratings; and
a second upper clad connected to the first upper clad and disposed on the passive waveguide.

4. The distributed Bragg reflector tunable laser diode of claim 3 , wherein the distributed reflector section further comprises a second lower electrode connected to the first lower electrode and disposed under the second lower clad.

5. The distributed Bragg reflector tunable laser diode of claim 3 , wherein the gain section further comprises a first contact electrode between the first upper clad and the first upper electrode,
wherein the distributed reflector section further comprises a second contact electrode between the second upper clad and the current injection electrode.

6. The distributed Bragg reflector tunable laser diode of claim 5 , wherein the distributed reflector section further comprises an insulation layer between the current injection electrode and the heater electrode.

7. The distributed Bragg reflector tunable laser diode of claim 6 , wherein the insulation layer is disposed between the first and second contact electrodes.

8. The distributed Bragg reflector tunable laser diode of claim 7 , wherein the distributed reflector section further comprises:
first and second pads connected to the current injection electrode and the heater electrode; and
first and second columns disposed between the first and second pads and the first and second lower clads.

9. The distributed Bragg reflector tunable laser diode of claim 8 , wherein the first and second columns comprise benzocyclobutene.

10. The distributed Bragg reflector tunable laser diode of claim 1 , wherein the substrate further comprises a phase section between the gain section and the distributed reflector section.

11. The distributed Bragg reflector tunable laser diode of claim 1 , wherein the heater electrode has a straight line shape, an uneven shape, a comb shape, or a mesh shape.

12. The distributed Bragg reflector tunable laser diode of claim 1 , wherein the substrate comprises InP.

13. The distributed Bragg reflector tunable laser diode of claim 1 , wherein the current reduces the wavelength of the laser light.

14. The distributed Bragg reflector tunable laser diode of claim 13 , wherein the wavelength of the laser light is increased by heating the passive waveguide.

Assignees

• Electronics & Telecommunications Res Inst

Inventors

• Kwon Oh Kee
• Lee Chul-Wook
• Oh Su Hwan
• Kim Kisoo

Classifications

• H01S5/1221

  Detuning between Bragg wavelength and gain maximum · CPC title

• H01S5/0612

  controlled by temperature · CPC title

• H01S5/06256

  with DBR-structure · CPC title

• H01S5/20

  Structure or shape of the semiconductor body to guide the optical wave {; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers} · CPC title

• G02B2006/12107

  Grating · CPC title