Integration of millimeter wave antennas on microelectronic substrates

Patent metadata

Field	Value
Publication number	US-10147997-B2
Application number	US-201715445618-A
Country	US
Kind code	B2
Filing date	Feb 28, 2017
Priority date	Mar 26, 2012
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

A high performance antenna incorporated on a microelectronic substrate by forming low-loss dielectric material structures in the microelectronic substrates and forming the antenna on the low-loss dielectric material structures. The low-loss dielectric material structures may be fabricated by forming a cavity in a build-up layer of the microelectronic substrate and filling the cavity with a low-loss dielectric material.

First claim

What is claimed is:

1. A microelectronic structure, comprising:
a microelectronic substrate comprising a substrate core having a first build-up layer on a first surface thereof and a second build-up layer on a second surface of the substrate core opposing the substrate core first surface;
a low-loss dielectric material structure formed within the first build-up layer, which extends through the substrate core and extends at least partially into the second build-up layer; and
an antenna contacting the low-loss dielectric material structure.

2. The microelectronic structure of claim 1 , wherein the low-loss dielectric material structure contacts the substrate core of the microelectronic substrate.

3. The microelectronic structure of claim 1 , wherein the antenna is embedded in the low-loss dielectric material structure.

4. The microelectronic structure of claim 1 , wherein the low-loss dielectric material structure is selected from the group comprising epoxy, crystal polymer, benzocyclobutene, and polyimide.

5. The microelectronic structure of claim 1 , wherein the low-loss dielectric material structure includes magnetic nanoparticles.

6. The microelectronic structure of claim 1 , further including a microelectronic device attached to the microelectronic substrate and a transmission line connecting the microelectronic device to the antenna.

7. The microelectronic structure of claim 6 , further including a transmission line isolation structure formed in the microelectronic substrate, wherein the transmission line is disposed on the transmission line isolation structure.

8. The microelectronic structure of claim 1 , wherein the first build-up layer comprises a plurality of alternating metallization layers and dielectric layers.

9. A method of fabricating a microelectronic structure, comprising:
forming a microelectronic substrate comprising a substrate core having a first build-up layer on a first surface thereof;
forming a second build-up layer on a second surface of the substrate core opposing the substrate core first surface;
forming a low-loss dielectric material structure within the first build-up layer, which extends through the substrate core and extends at least partially into the second build-up layer; and
forming an antenna contacting the low-loss dielectric material structure.

10. The method of claim 9 , wherein forming the low-loss dielectric material structure comprises forming the low-loss dielectric material structure to contact the substrate core of the microelectronic substrate.

11. The method of claim 9 , wherein forming the antenna comprises embedding the antenna within the low-loss dielectric material structure.

12. The method of claim 9 , wherein forming the low-loss dielectric material structure comprises forming the low-loss dielectric material structure from a low-loss dielectric material selected from the group comprising epoxy, crystal polymer, benzocyclobutene, and polyimide.

13. The method of claim 9 , wherein forming a low-loss dielectric material structure within the microelectronic substrate comprises forming a low-loss dielectric material structure having magnetic nanoparticles dispensed therein within the microelectronic substrate.

14. The method of claim 9 , wherein the forming the low-loss dielectric material structure comprises forming a cavity in the microelectronic substrate and disposing a low-loss dielectric material within the cavity.

15. The method of claim 9 , further including attaching a microelectronic device to the microelectronic substrate and connecting the microelectronic device to the antenna with a transmission line.

16. The method of claim 15 , further including forming a transmission line isolation structure formed in the microelectronic substrate, wherein the transmission line is disposed on the transmission line isolation structure.

Assignees

• Intel Corp

Inventors

• Kamgaing Telesphor

Classifications

• H01Q1/2283 Primary

  mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package · CPC title

• Y10T29/49016

  Antenna or wave energy "plumbing" making · CPC title

• H01Q21/0025 Primary

  Modular arrays · CPC title

• H01Q21/0087

  Apparatus or processes specially adapted for manufacturing antenna arrays (manufacturing waveguides H01P11/00) · CPC title