Quantum dot and light emitting diode including the same

Patent metadata

Field	Value
Publication number	US-10147844-B2
Application number	US-201615380157-A
Country	US
Kind code	B2
Filing date	Dec 15, 2016
Priority date	Dec 29, 2015
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

A quantum dot includes: a core including at least one first positive ion precursor and at least one negative ion precursor; a shell including at least one second positive ion precursor and at least one negative ion precursor and wrapping the core; and a ligand formed on a surface of the shell, wherein the first positive ion precursor is an n-period element and the second positive ion precursor is an (n-1)-period element, where n is an integer of 3 to 6.

First claim

What is claimed is:

1. A light-emitting device comprising:
a first electrode;
a second electrode facing the first electrode;
an emission layer provided between the first electrode and the second electrode,
wherein the emission layer includes a core including at least one first positive ion precursor and at least one negative ion precursor, a shell including at least one second positive ion precursor and at least one negative ion precursor and wrapping the core, and a ligand formed on a surface of the shell, and wherein the first positive ion precursor is an n-period element and the second positive ion precursor is an (n-1)-period element, where n is an integer of 3 to 6;
a hole transport layer disposed between the first electrode and the emission layer; and
an electron transport layer disposed between the emission layer and the second electrode,
wherein the hole transport layer, the electron transport layer and the core of the emission layer include a same inorganic material,
wherein the hole transport layer includes a p-doped compound of the compound included in the core, the p-doped compound being doped with a metal, a non-metal, or a halogen element, and
the electron transport layer includes an n-doped compound of the compound included in the core, the n-doped compound being doped with a metal, a non-metal, or a halogen element.

2. The light-emitting device of claim 1 , wherein the light-emitting device includes a quantum dot in which a HOMO energy level and a LUMO energy level of the shell are different from a HOMO energy level and a LUMO energy level of the core by equal to or less than 2.0 eV, respectively.

3. The light-emitting device of claim 2 , wherein
the first positive ion precursor includes at least one of Al, Fe, Co, Cu, Zn, Ga, In, Ag, Pb, Bi, and Tl.

4. The light-emitting device of claim 3 , wherein
the at least one negative ion precursor includes at least one of Te, I, O, S, Se, N, P, As, and Sb.

5. The light-emitting device of claim 4 , wherein
the core includes at least one of PbI2, BiI3, Fe2O3, CoO, CuO, Cu2O, AgO, Ag2O, CuS, Cu2S, Ag2S, In2S3, Bi2S3, CuSe, Cu2Se, AgSe, Ga2Se3, In2Se3, TlSe, Cu2Te, ZnTe, Cu3N, Zn3P2, GaP, InP, AlAs, GaAs, and AlSb.

6. The light-emitting device of claim 5 , wherein
the light-emitting device further includes a blocking layer, and
the blocking layer is provided between the hole transport layer and the emission layer and/or between the emission layer and the electron transport layer.

7. The light-emitting device of claim 6 , wherein
the blocking layer includes a first-group metal based halide compound or a second-group metal based halide compound.

8. The light-emitting device of claim 7 , wherein
the blocking layer is 0.5 nm to 5 nm thick.

Assignees

• Samsung Display Co Ltd

Inventors

• Kim Dong Chan
• Cho Yoon Hyeung
• KIM Yi Su

Classifications

• C09K11/88

  containing selenium, tellurium or unspecified chalcogen elements · CPC title

• C09K11/025 Primary

  non-luminescent particle coatings or suspension media · CPC title

• H01L51/5004

  Electricity · mapped topic

• H01L51/5056

  Electricity · mapped topic

• H01L51/5096

  Electricity · mapped topic