Vapor transport deposition method and system for material co-deposition

Patent metadata

Field	Value
Publication number	US-10147838-B2
Application number	US-201615290054-A
Country	US
Kind code	B2
Filing date	Oct 11, 2016
Priority date	Nov 18, 2011
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

An improved feeder system and method for continuous vapor transport deposition that includes at least two vaporizers coupled to a common distributor through an improved seal for separately vaporizing and collecting at least any two vaporizable materials for deposition as a material layer on a substrate. Multiple vaporizers provide redundancy and allow for continuous deposition during vaporizer maintenance and repair.

First claim

What is claimed as new and desired to be protected by Letters Patent of the United States is:

1. A method for depositing a material comprising:
vaporizing a first material powder into a first material vapor in a first permeable member of a first vaporizer unit within a vacuum vessel, wherein the first permeable member is permeable to vapor;
vaporizing a second material powder into a second material vapor in a second permeable member of a second vaporizer unit within the vacuum vessel, wherein the second permeable member is permeable to vapor;
collecting the first and second material vapors separately in the vacuum vessel; and
outputting the material vapors separately.

2. The method of claim 1 , wherein the step of collecting the first and second material vapors separately further comprises:
capturing the first material vapor from the first vaporizer unit in a first vapor housing;
passing the first material vapor from the first vapor housing to a first chamber in the vacuum vessel;
capturing the second material vapor from the second vaporizer unit in a second vapor housing; and
passing the second material vapor from the second vapor housing to a second chamber in the vacuum vessel.

3. The method of claim 2 , wherein the first and second material powders are a semiconductor material.

4. The method of claim 2 , wherein the first and second material powder are a mixture of two different semiconductor materials.

5. The method of claim 2 , wherein the first and second material powders are a mixture of a semiconductor material and a dopant.

6. The method of claim 3 , wherein the semiconductor material is CdTe.

7. The method of claim 3 , wherein the semiconductor material is CdS.

8. The method of claim 4 , wherein at least one of the two semiconductor materials is CdTe.

9. The method of claim 5 , wherein the semiconductor material is CdTe and the dopant is Si.

10. A method for continuous vapor transport deposition of a material on a substrate comprising:
vaporizing a first material powder into a first material vapor in a first vaporizing unit comprising a first permeable member within a vacuum vessel, wherein the first permeable member is permeable to vapor;
vaporizing a second material powder into a second material vapor in a second vaporizer unit comprising a second permeable member within the vacuum vessel, wherein the second permeable member is permeable to vapor;
passing the first and second material vapors from the first and second vaporizer units into separate chambers in the vacuum vessel;
separately outputting the vapor first and second material vapors onto a substrate; and
deactivating the first vaporizer unit and continuing to pass the second material vapor from the second vaporizer unit for output; or
deactivating the second vaporizer unit and continuing to pass the first material vapor from the first vaporizer unit for output.

11. The method of claim 10 , wherein the first or second material vapor is a semiconductor material vapor.

12. The method of claim 10 , wherein the first material vapor and the second material vapor are each semiconductor material vapors.

13. The method of claim 10 , wherein the first and second material vapors comprise a semiconductor material vapor and a dopant.

14. The method of claim 11 , wherein the semiconductor material vapor is CdTe vapor.

15. The method of claim 12 , wherein at least one of the first and the second semiconductor material vapors is CdTe vapor.

16. The method of claim 13 , wherein the semiconductor material vapor is CdTe vapor and the dopant is Si.

17. A method for depositing a material comprising:
vaporizing a first material powder into a first material vapor in a first vaporizer unit housed within a vacuum vessel;
vaporizing a second material powder into a second material vapor in a second vaporizer unit housed within the vacuum vessel;
collecting the first and second material vapors separately in the vacuum vessel; and
outputting the material vapors separately.

18. The method of claim 2 , wherein a seal extends from a first opening in the first vapor housing into a vapor distribution unit.

19. The method of claim 10 , wherein the first and second vaporizer units are within first and second vapor housings, and wherein a seal extends from an opening in the first vapor housing into a vapor distribution unit.

20. The method of claim 17 , wherein the first vaporizer unit is within a first vapor housing and the second vaporizer unit is within a second vapor housing, and wherein a seal extends from a first opening in the first vapor housing into a vapor distribution unit.

Assignees

• First Solar Inc

Inventors

• Barden John
• Powell Rick C

Classifications

• H10P14/3432

  Tellurides · CPC title

• H10P14/3428

  Sulfides · CPC title

• C23C14/24

  Vacuum evaporation · CPC title

• C23C14/243

  Crucibles for source material (C23C14/28, C23C14/30 take precedence) · CPC title

• C23C16/448

  characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials · CPC title