Component Carrier and Component Carrier Arrangement
US-2015342027-A1 · Nov 26, 2015 · US
US10147663B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10147663-B2 |
| Application number | US-201615040405-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 10, 2016 |
| Priority date | Aug 16, 2013 |
| Publication date | Dec 4, 2018 |
| Grant date | Dec 4, 2018 |
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Official abstract text for this publication.
A ceramic circuit board includes a ceramic substrate, a first metal plate bonded to a front surface of the ceramic substrate, and a member bonded to a front surface side of the metal plate. The member is made up from a material which exhibits a lower coefficient of thermal expansion than that of the first metal plate, and which exhibits a higher Young's modulus than that of the first metal plate.
Opening claim text (preview).
What is claimed is: 1. A ceramic circuit board comprising: a ceramic substrate; a first metal plate bonded to a front surface of the ceramic substrate, the first metal plate having a surface configured to be equipped with a power semiconductor; a member bonded to a front surface side of the first metal plate; and a second metal plate bonded to a rear surface of the ceramic substrate; wherein an inequality t 2< ta<t 1 is satisfied, where to represents a thickness of the ceramic substrate, t 1 represents the thickness of the first metal plate, and t 2 represents the thickness of the second metal plate, and wherein the member is formed in an annular shape along an outer circumference of the front surface of the first metal plate, and the member is a component different from the power semiconductor, and wherein the member is made from a material which exhibits a lower coefficient of thermal expansion than that of the first metal plate, and which exhibits a higher Young's modulus than that of the first metal plate. 2. The ceramic circuit board according to claim 1 , wherein a plurality of the members are provided, the plural members being arranged along an outer circumference of the front surface of the first metal plate. 3. The ceramic circuit board according to claim 1 , wherein two of the members are bonded at linearly symmetric positions. 4. The ceramic circuit board according to claim 1 , wherein a portion of the member extends out in a transverse direction beyond an outer circumference of the front surface of the first metal plate. 5. The ceramic circuit board according to claim 1 , wherein an entirety of the member is bonded within the front surface of the first metal plate. 6. The ceramic circuit board according to claim 1 , wherein: a portion of the front surface of the first metal plate includes a recess therein; and the member is bonded in the recess. 7. The ceramic circuit board according to claim 1 , wherein at least material properties and thicknesses of the member and the ceramic substrate are adjusted so as to suppress warping of the ceramic circuit board. 8. The ceramic circuit board according to claim 1 , wherein a constituent material of the member is a ceramic material, which is the same as the ceramic material of the ceramic substrate. 9. The ceramic circuit board according to claim 1 , wherein the constituent material of the ceramic substrate is silicon nitride. 10. An electronic device comprising: a ceramic circuit board; and a power semiconductor, which is mounted on a front surface of a first metal plate of the ceramic circuit board, the ceramic circuit board comprising: a ceramic substrate; the first metal plate bonded to a front surface of the ceramic substrate; a member bonded to a front surface side of the metal plate; and a second metal plate bonded to a rear surface of the ceramic substrate; wherein an inequality t 2< ta<t 1 is satisfied, where to represents a thickness of the ceramic substrate, t 1 represents the thickness of the first metal plate, and t 2 represents the thickness of the second metal plate, and wherein the member is formed in an annular shape along an outer circumference of the front surface of the first metal plate, and the member is a component different from the power semiconductor, and wherein the member is made from a material which exhibits a lower coefficient of thermal expansion than that of the first metal plate, and which exhibits a higher Young's modulus than that of the first metal plate.
Insulating materials thereof · CPC title
Shapes or dispositions of interconnections · CPC title
Conductive package substrates serving as an interconnection, e.g. metal plates (leadframes H10W70/40) · CPC title
protecting against mechanical damage (H10W76/00, H10W74/00 take precedence) · CPC title
having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates · CPC title
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