Pressure sensor, microphone, and acoustic processing system
US-2015271586-A1 · Sep 24, 2015 · US
US10145751B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10145751-B2 |
| Application number | US-201615248412-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 26, 2016 |
| Priority date | Sep 4, 2015 |
| Publication date | Dec 4, 2018 |
| Grant date | Dec 4, 2018 |
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According to one embodiment, a sensor includes a deformable film portion, a first sensing element and a second sensing element. The first sensing element is fixed to the film portion, and includes a first magnetic layer of a first material, a first opposing magnetic layer, and a first intermediate layer. The first intermediate layer is provided between the first magnetic layer and the first opposing magnetic layer. The second sensing element is fixed to the film portion, and includes a second magnetic layer of a second material, a second opposing magnetic layer, and a second intermediate layer. The second material is different from the first material. The second intermediate layer is provided between the second magnetic layer and the second opposing magnetic layer.
Opening claim text (preview).
What is claimed is: 1. A sensor, comprising: a film portion, the film portion being deformable; a first sensing element fixed to the film portion, the first sensing element including a first magnetic layer, a first opposing magnetic layer, and a first intermediate layer, the first intermediate layer being provided between the first magnetic layer and the first opposing magnetic layer; a second sensing element fixed to the film portion, the second sensing element including a second magnetic layer, a second opposing magnetic layer, and a second intermediate layer, the second intermediate layer being provided between the second magnetic layer and the second opposing magnetic layer; a third magnetic layer; and a fourth magnetic layer, the third magnetic layer having a first length along a first direction, the first direction being from the film portion toward the first sensing element, a second length along a second direction perpendicular to the first direction, a third length along a third direction perpendicular to the first direction and perpendicular to the second direction, a first composition, and a third magnetization direction, the fourth magnetic layer having at least one of a fourth length along the first direction, the fourth length being different from the first length, a fifth length along the second direction, the fifth length being different from the second length, a sixth length along the third direction, the sixth length being different from the third length, a second composition different from the first composition, or a fourth magnetization direction different from the third magnetization direction. 2. The sensor according to claim 1 , wherein the third magnetic layer includes at least one selected from the group consisting of a first alloy, a second alloy, a third alloy, and a fourth alloy, the first alloy includes Co and Pt, the second alloy includes Fe and Pt, the third alloy Includes Co and Pd, the fourth alloy includes Fe and Pd; and the fourth magnetic layer includes at least one selected from the group consisting of a sixth alloy, a seventh alloy, an eighth alloy, and a ninth alloy, the sixth alloy includes Co and Pt, the seventh alloy includes Fe and Pt, the eighth alloy includes Co and Pd, the ninth alloy includes Fe and Pd. 3. The sensor according to claim 2 , wherein the first alloy includes (Co x Pt 100−x )100− y Cr y , the x is not less than 50 at. % and not more than 85 at. %, and the y is not less than 0 at. % and not more than 40 at. %. 4. The sensor according to claim 1 , wherein the third magnetic layer includes a first film and a second film, the first film includes at least one of Fe, Co, or Ni, and the second film includes at least one selected from the group consisting of Ir—Mn, Pt—Mn, Pd—Pt—Mn, Ru—Mn, Rh—Mn, Ru—Rh—Mn, Fe—Mn, Ni—Mn, Cr—Mn—Pt, and Ni—O; and the fourth magnetic layer includes a third film and a fourth film, the third film includes at least one of Fe, Co, or Ni, and the fourth film includes at least one selected from the group consisting of Ir—Mn, Pt—Mn, Pd—Pt—Mn, Ru—Mn, Rh—Mn, Ru—Rh—Mn, Fe—Mn, Ni—Mn, Cr—Mn—Pt, and Ni—O. 5. The sensor according to claim 4 , wherein the second film overlaps the first film in the first direction, and the fourth film overlaps the third film in the first direction.
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