Measurement of semiconductor structures with capillary condensation

US10145674B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10145674-B2
Application numberUS-201715497033-A
CountryUS
Kind codeB2
Filing dateApr 25, 2017
Priority dateMay 2, 2016
Publication dateDec 4, 2018
Grant dateDec 4, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

Methods and systems for performing optical measurements of geometric structures filled by a capillary condensation process are presented herein. Measurements are performed while the structures under measurement are treated with a flow of purge gas that includes a controlled amount of fill material. A portion of the fill material condenses onto the structures under measurement and fills openings in the structural features, spaces between structural features, small volumes such as notches, trenches, slits, contact holes, etc. The degree of saturation of vaporized material in the gaseous flow is adjusted based on the maximum feature size to be filled. In some examples, measurement data, such as spectroscopic data or image data, are collected when a structure is unfilled and when the structure is filled by capillary condensation. The collected data are combined to improve measurement performance.

First claim

Opening claim text (preview).

What is claimed is: 1. A measurement system comprising: an illumination source configured to provide a first amount of illumination light to one or more structural elements disposed on a specimen; a vapor injection system configured to provide a first gaseous flow including a first fill material in a vapor phase to the one or more structural elements during the illumination of the one or more structural elements, wherein a portion of the first fill material is condensed onto the one or more structural elements in a liquid phase, and wherein the portion of the first fill material fills at least a portion of a space between one or more geometric features of the one or more structural elements, wherein the vapor injection system mixes a first flow of unsaturated purge gas with a second flow of purge gas saturated with the first fill material in a vapor phase to provide the first gaseous flow; and a detector configured to receive a first amount of collected light from the one or more structural elements in response to the first amount of illumination light and generate a first set of measurement signals indicative of the first amount of collected light. 2. The measurement system of claim 1 , wherein the vapor injection system is further configured to provide a second gaseous flow including a second fill material in a vapor phase to the one or more structural elements during the illumination of the one or more structural elements, wherein a portion of the second fill material is condensed onto the one or more structural elements in a liquid phase, and wherein the portion of the second fill material fills at least a portion of the space between one or more geometric features of the one or more structural elements. 3. The measurement system of claim 1 , further comprising: a computing system configured to: receive the first set of measurement signals; and estimate a value of a parameter of interest of the one or more structural elements based at least in part on the first set of measurement signals. 4. The measurement system of claim 3 , wherein the estimating of the value of the parameter of interest involves any of a model-based regression, a model-based library search, a model-based library regression, an image-based analysis, and a signal response metrology model. 5. The measurement system of claim 1 , wherein the illumination source is further configured to provide a second amount of illumination light to the one or more structural elements disposed on the specimen, wherein the vapor injection system is further configured to provide a second gaseous flow including the first fill material at a different partial pressure than the first gaseous flow, wherein the detector is further configured to receive a second amount of collected light from the one or more structural elements in response to the second amount of illumination light and generate a second set of measurement signals indicative of the second amount of collected light. 6. The measurement system of claim 5 , further comprising: a computing system configured to: receive the first set of measurement signals; receive the second amount of measurement signals; and estimate a value of a parameter of interest of the one or more structural elements based at least in part on the first and second sets of measurement signals and a multi-target measurement model. 7. The measurement system of claim 5 , wherein the partial pressure of the first fill material in the second gaseous flow is approximately zero. 8. The measurement system of claim 1 , wherein the measurement system is configured as any of a spectroscopic ellipsometer, a spectroscopic reflectometer, an angle resolved reflectometer, a dark field inspection system, a bright field inspection system, and an imaging overlay measurement system. 9. The measurement system of claim 1 , wherein the first amount of illumination light is broadband light including illumination wavelengths from 100 nanometers to 2,500 nanometers. 10. The measurement system of claim 1 , wherein the specimen temperature is approximately the same temperature as a temperature of the first fill material vaporized in the first gaseous flow. 11. The measurement system of claim 1 , wherein the vapor injection system adjusts a partial pressure of the fill material in the first gaseous flow by changing a ratio of the flow of unsaturated purge gas and the flow of purge gas saturated with the first fill material in a vapor phase. 12. The measurement system of claim 1 , wherein the vapor injection system comprises: a bubbler including the first fill material in a liquid phase, wherein a portion of the liquid fill material vaporizes into the second flow of purge gas to saturate the second flow of purge gas with the first fill material in a vapor phase. 13. The measurement system of claim 1 , wherein the fill material is any of water, ethanol, toluene, isopropyl alcohol, methanol, and benzene. 14. The measurement system of claim 1 , wherein the first fill material exhibits fluorescence in response to the first amount of illumination light. 15. A measurement system comprising: an illumination source configured to provide an amount of illumination light to one or more structural elements disposed on a specimen; a vapor injection system comprising: a first mass flow controller that regulates a flowrate of a first flow of a purge gas; a second mass flow controller that regulates a flowrate of a second flow of the purge gas; and a bubbler including a first fill material in a liquid phase, wherein the second flow of the purge gas passes through the bubbler and a portion of the liquid fill material vaporizes into the second flow of the purge gas to saturate the second flow of the purge gas with the first fill material in a vapor phase, wherein the vapor injection system mixes the first flow of purge gas with the second flow of purge gas saturated with the first fill material in a vapor phase to provide a gaseous flow; a nozzle located in close proximity to the one or more structural elements on the specimen, wherein the nozzle provides the gaseous flow locally to the one or more structural elements disposed on the specimen during the illumination of the one or more structural elements, wherein a portion of the first fill material is condensed onto the one or more structural elements in a liquid phase, and wherein the portion of the first fill material fills at least a portion of a space between one or more geometric features of the one or more structural elements; and a detector configured to receive a first amount of collected light from the one or more structural elements in response to the first amount of illumination light and generate a first set of measurement signals indicative of the first amount of collected light. 16. The measurement system of claim 15 , further comprising: a computing system configured to: communicate a first command signal to the first mass flow controller that causes the first mass flow controller to adjust the flowrate of the first flow of the purge gas; and communicate a second command signal to the second mass flow controller that causes the second mass flow controller to adjust the flowrate of the second flow of the purge gas such that a ratio of the flowrate of the first flow of the purge gas and the flowrate of the second flow of the purge gas is adjusted to achieve a desired partial pressure of the first fill material in the gaseous flow. 17. A method comprising: providing a first amount of illumination light to one or more structural elements disposed on a specimen;

Assignees

Inventors

Classifications

  • G01B11/02Primary

    for measuring length, width or thickness (G01B11/08 takes precedence) · CPC title

  • Preparing specimens for investigation {including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q}(mounting specimens on microscopic slides G02B21/34; means for supporting the objects or the materials to be analysed in electron microscopes H01J37/20 {; laboratory gas handling apparatus B01L5/00}) · CPC title

  • Measuring geometric parameters of semiconductor structures, e.g. profile, critical dimensions or trench depth · CPC title

  • Details, e.g. use of specially adapted sources, lighting or optical systems · CPC title

  • Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor (using photoresist structures for special production processes, see the relevant places, e.g. B44C, H10P76/00, H05K) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10145674B2 cover?
Methods and systems for performing optical measurements of geometric structures filled by a capillary condensation process are presented herein. Measurements are performed while the structures under measurement are treated with a flow of purge gas that includes a controlled amount of fill material. A portion of the fill material condenses onto the structures under measurement and fills openings…
Who is the assignee on this patent?
Kla Tencor Corp
What technology area does this patent fall under?
Primary CPC classification G01B11/02. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Dec 04 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).