Crystal growth apparatus and crystal production method

Patent metadata

Field	Value
Publication number	US-10145022-B2
Application number	US-201715622427-A
Country	US
Kind code	B2
Filing date	Jun 14, 2017
Priority date	Jun 16, 2016
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

A crystal growth apparatus includes: a raw material supplying part that mixes raw materials including a group III element metal and an alkali metal; a growing part disposed at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism that tilts the raw material supplying part and the growing part; a heater that heats the raw material supplying part and the growing part; a control part that controls an operation of the tilting mechanism; and a supply port that supplies a nitrogen element-containing substance to the growing part, wherein the raw material supplying part having an opening facing to the growing part, the opening being disposed at a bottom portion and one edge portion of the raw material supplying part, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the other edge portion on the side opposite to the one edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and the control part controls the tilting mechanism so as to tilt the raw material supplying part toward the one edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.

First claim

The invention claimed is:

1. A crystal growth apparatus comprising:
a raw material supplying part configured to mix raw materials including a group III element metal and an alkali metal;
a growing part at a stage under the raw material supplying part, the growing part having a seed substrate;
a tilting mechanism configured to tilt the raw material supplying part and the growing part;
a heater configured to heat the raw material supplying part and the growing part;
a control part configured to control an operation of the tilting mechanism; and
a supply port configured to supply a nitrogen element-containing substance to the growing part,
wherein the raw material supplying part has an opening facing the growing part, the opening being defined at a bottom portion and a first edge portion of the raw material supplying part,
wherein the control part is configured to control the tilting mechanism so as to tilt the raw material supplying part toward a second edge portion on a side opposite to the first edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed, and
wherein the control part is further configured to control the tilting mechanism so as to tilt the raw material supplying part toward the first edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed.

2. A crystal production method including:
preparing a crystal growth apparatus including: a raw material supplying part configured to mix raw materials including a group III element metal and an alkali metal; a growing part at a stage under the raw material supplying part, the growing part having a seed substrate; a tilting mechanism configured to tilt the raw material supplying part and the growing part; a heater configured to heat the raw material supplying part and the growing part; a control part configured to control an operation of the tilting mechanism; and a supply port configured to supply a nitrogen element-containing substance to the growing part, wherein the raw material supplying part has an opening facing the growing part, the opening being defined at a bottom portion and a first edge portion of the raw material supplying part,
loading the raw materials including the group III element metal and the alkali metal into the raw material supplying part and loading the seed substrate into the growing part,
tilting the raw material supplying part toward a second edge portion on a side opposite to the first edge portion so as to prevent the raw materials from entering the opening when the raw materials are mixed,
tilting the raw material supplying part toward the first edge portion so that the raw materials drop through the opening to the growing part when the mixing of the raw materials is completed, and
growing a group III nitride crystal on the seed substrate.

3. The crystal production method according to claim 2 , wherein the crystal growth apparatus further includes a uniform dropping structure part between the raw material supplying part and the growing part,
wherein the uniform dropping structure part has a plurality of crucible openings, and
wherein the crystal growth apparatus is configured to cause the tilting mechanism to swing the uniform dropping structure part such that, after the raw materials are dropped through the opening to the uniform dropping structure part, the raw materials are supplied through the plurality of crucible openings to the growing part.

4. The crystal production method according to claim 3 , wherein respective diameters of the plurality of crucible openings become smaller as a distance from a center of the uniform dropping structure part increases.

5. The crystal production method according to claim 2 , wherein the group III element metal is Ga, and
wherein the alkali metal is Na.

Assignees

• Univ Osaka
• Panasonic Corp

Inventors

• Mori Yusuke
• Imade Mamoru
• Komatsu Shinsuke
• Yoshino Michirou

Classifications

• C30B35/00

  Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure · CPC title

• C30B29/406 Primary

  Gallium nitride · CPC title

• C30B9/10

  Metal solvents · CPC title

• C30B9/12 Primary

  Salt solvents, e.g. flux growth · CPC title