Stop-on silicon containing layer additive

Patent metadata

Field	Value
Publication number	US-10144850-B2
Application number	US-201615268956-A
Country	US
Kind code	B2
Filing date	Sep 19, 2016
Priority date	Sep 25, 2015
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

Chemical mechanical polishing (CMP) compositions, methods and systems are for polishing patterned semiconductor wafers. The CMP compositions comprising an abrasive and a water soluble aluminum compound additive with a pH>7 suppress CMP stop layer (a silicon containing layer, such as silicon nitride, silicon oxide, or silicon carbide) removal rate. CMP compositions optionally contain surfactant to help wet surface; a corrosion inhibitor to provide corrosion inhibition on metal lines, vias, or trenches; and a pH adjusting agent that is used to adjust pH of the CMP polishing composition.

First claim

The invention claimed is:

1. A polishing composition comprising:
0.01 wt. % to 20 wt. % of colloidal silica particles;
0.01 wt. % to about 10 wt. % of a water soluble aluminum compound selected from the group consisting of sodium aluminate, potassium aluminate, aluminum acetate, aluminum hydroxide, and combinations thereof;
0.0005 wt % to about 0.5 wt % of a corrosion inhibitor selected from the group consisting of benzotriazole (BTA) and its derivatives, triazole and its derivatives, and combinations thereof;
0.0001 wt. % to about 5 wt. % of a pH adjusting agent selected from the group consisting of potassium hydroxide, sodium hydroxide, ammonia, quaternary organic ammonium hydroxide;
0.1 wt. % to 5 wt. % of an organic acid selected from the group consisting of benzenesulfonic acid, toluenesulfonic acid, and combinations thereof;
and
water;
optionally
0.0001 wt. % to 10 wt. % of a surfactant selected from the group consisting of a). non-ionic surface wetting agents; b). anionic surface wetting agents; c). cationic surface wetting agents; d). ampholytic surface wetting agents; and mixtures thereof; and
0.01 wt. % to 10 wt. % of an oxidizing agent selected from the group consisting of peroxy-compound comprising at least one peroxy group (O—O), oxidized halide, perboric acid, perborate, percarbonate, peroxyacid, permanganate, chromate, cerium compound, ferricyanide, and mixtures thereof;
and
wherein the polishing composition has a pH of 8 to 12.

2. The polishing composition of claim 1 , wherein
the non-ionic surface wetting agent is selected from the group consisting of ethoxylated alcohol, ethoxylated acetylenic diol surfactant, polyethylene glycol alkyl ether, proplylene glycol alkyl ether, glucoside alkyl ether, polyethylene glycol octylphenyl ether, polyethylene glycol alkylpgenyl ether, glycerol alkyl ester, polyoxyethylene glycol sorbiton alkyl ester, sorbiton alkyl ester, cocamide monoethanol amine, cocamide diethanol amine, dodecyl dimethylamine oxide, block copolymers of polyethylene glycol and polypropylene glycol, polyethoxylated tallow amines, fluorosurfactant, and combinations thereof;
the anionic surface wetting agent is selected from the group consisting of alkyl carboxylate, alkyl polyacrylic salt, alkyl sulfate, alkyl phosphate, alkyl bicarboxylate, alkyl bisulfate, alkyl biphosphate, alkoxy carboxylate, alkoxy sulfate, alkoxy phosphate, alkoxy bicarboxylate, alkoxy bisulfate, alkoxy biphosphate, substituted aryl carboxylate, substituted aryl sulfate, substituted aryl phosphate, substituted aryl bicarboxylate, substituted aryl bisulfate, substituted aryl biphosphate, and combinations thereof;
the cationic surface wetting agent is a halide of molecules comprising hydrophobic chain and cationic charge center selected from the group consisting of amine, quaternary ammonium, benzyalkonium and alkylpyridinium ion;
and
the ampholytic surface wetting agent possess both positive (cationic) and negative (anionic) charges on the main molecular chains and with their relative counter ions.

Assignees

• Air Prod & Chem
• Versum Mat Us Llc

Inventors

• Stender Matthias
• Graham Maitland Gary

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10W20/092

  by smoothing the dielectric parts · CPC title

• H10W20/062

  by smoothing of conductive parts, e.g. by planarisation · CPC title

• H10P14/61

  using masks · CPC title