Semiconductor Device, Semiconductor Module, and Electronic Circuit
US-2015207407-A1 · Jul 23, 2015 · US
Temperature sensing semiconductor device
US10141411B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10141411-B2 |
| Application number | US-201715435833-A |
| Country | US |
| Kind code | B2 |
| Filing date | Feb 17, 2017 |
| Priority date | Mar 18, 2016 |
| Publication date | Nov 27, 2018 |
| Grant date | Nov 27, 2018 |
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- Title
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Abstract
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A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion includes an n-type cathode region being in contact with the body region, and a p-type anode region separated from the body region by the cathode region.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device comprising: a semiconductor substrate of silicon carbide, wherein the semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated through an epitaxial growth technique by depositing the n-type drift region on the semiconductor substrate and then by depositing the p-type body region on the n-type drift region; and a temperature sensor portion disposed in the semiconductor substrate and separated from the drift region by the body region, wherein the body region extends from the temperature sensor portion through the areas having a plurality of trench gates, and wherein the temperature sensor portion comprises: an n-type cathode region being in contact with the body region; and a p-type anode region separated from the body region by the cathode region. 2. The semiconductor device according to claim 1 , further comprising the plurality of trench gates, wherein each of the trench gates penetrates the body region and reaches the drift region, wherein the temperature sensor portion is located between adjacent trench gates and is separated from the trench gates by the body region.
Assignees
Inventors
Classifications
Arrangements for thermal protection or thermal control (integrated devices comprising arrangements for thermal protection H10D89/60) · CPC title
using microstructures, e.g. made of silicon · CPC title
using microstructures, e.g. made of silicon · CPC title
using semiconducting elements having PN junctions (G01K7/02, G01K7/16, G01K7/30 take precedence) · CPC title
Electricity · mapped topic
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Frequently asked questions
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- What does patent US10141411B2 cover?
- A semiconductor device includes a semiconductor substrate of silicon carbide, and a temperature sensor portion. The semiconductor substrate includes a portion in which an n-type drift region and a p-type body region are laminated. The temperature sensor portion is disposed in the semiconductor substrate and is separated from the drift region by the body region. The temperature sensor portion in…
- Who is the assignee on this patent?
- Toyota Motor Co Ltd, Denso Corp
- What technology area does this patent fall under?
- Primary CPC classification H01L29/1608. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).