Direct electrostatic assembly with capacitively coupled electrodes
US-2015262856-A1 · Sep 17, 2015 · US
US10141285B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10141285-B2 |
| Application number | US-201314031529-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2013 |
| Priority date | Sep 19, 2013 |
| Publication date | Nov 27, 2018 |
| Grant date | Nov 27, 2018 |
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A system and method form charge patterns on micro objects. The system and method employ a micro object including a rectifying device. The rectifying device exhibits an asymmetric current-voltage (I-V) response curve. Further, the system and method employ a device external to the micro object to induce the flow of charge through the rectifying device.
Opening claim text (preview).
What is claimed is: 1. A system for forming charge patterns on micro objects, said system comprising: a micro object including a rectifying device, the rectifying device exhibiting an asymmetric current-voltage (I-V) response curve, the micro object includes a substrate, and wherein the rectifying device is formed on or in the substrate; and a device external to the micro object, configured to generate an electric or magnetic field to induce a flow of charge through the rectifying device, wherein the device external to the micro object induces the flow of charge through the rectifying device using capacitive or magnetic coupling, and wherein the device external to the micro object which generates the electric or magnetic field, uses at least a part of the electric or magnetic field to generate charge patterns, and wherein motion is induced as an interaction of the electric or magnetic field, induced charge and the micro-object. 2. The system of claim 1 , wherein the micro object further includes: an insulator with a first side adjoining the substrate, and a second side adjoining two coupling electrodes opposite the first side of the insulator. 3. The system of claim 1 , wherein the rectifying device includes at least one diode. 4. The system of claim 1 , wherein the rectifying device includes a thin film diode. 5. The system of claim 4 , wherein the thin film diode includes at least one of an s-Si:H PIN diode and an organic thin film diode. 6. The system of claim 1 , wherein the rectifying device includes a thin film Schottky diode. 7. The system of claim 6 , wherein the thin film Schottky diode includes a thin film material being one of cadmium selenide (CdSe) and gallium indium zinc oxide (GIZO). 8. The system of claim 1 , wherein a terminal of the rectifying device is connected to an external environment of the micro object. 9. The system of claim 1 , wherein the device external to the micro object is configured to generate light incident on the rectifying device to induce the flow of charge through the rectifying device. 10. The system of claim 9 , wherein the rectifying device is a photodiode. 11. A system for forming charge patterns on micro objects, said system comprising: a micro object including a rectifying device, the rectifying device exhibiting an asymmetric current-voltage (I-V) response curve, the micro object includes a substrate, and wherein the rectifying device is formed on or in the substrate; and a device external to the micro object configured to induce a flow of charge through the rectifying device, wherein the device external to the micro object induces the flow of charge through the rectifying device using capacitive or magnetic coupling, wherein the device external to the micro object induces the flow of charge by generating a static electric field, and wherein the micro object is moving relative to the device. 12. A system for forming charge patterns on micro objects, said system comprising: a micro object including a first rectifying device, the first rectifying device exhibiting an asymmetric current-voltage (I-V) response curve, the micro object includes a substrate, and wherein the first rectifying device is formed on or in the substrate, and wherein the micro object includes a second rectifying device exhibiting an asymmetric I-V response curve, wherein the first rectifying device and the second rectifying device are configured to induce the flow of charge between opposing surfaces of the micro object and to induce the flow of charge between opposing ends of the surfaces; and a device external to the micro object configured to induce a flow of charge through the rectifying device, wherein the device external to the micro object induces the flow of charge through the rectifying device using capacitive or magnetic coupling. 13. A system for forming charge patterns on micro objects, said system comprising: a micro object including a rectifying device, the rectifying device exhibiting an asymmetric current-voltage (l-V) response curve, the micro object includes a substrate, and wherein the rectifying device is formed on or in the substrate, wherein the micro object further includes a first insulator with a first side adjoining the substrate, and a second side adjoining two coupling electrodes opposite the first side of the first insulator, and wherein the micro object further includes a second insulator adjoining the second side of the first insulator and positioned over the two coupling electrodes; and a device external to the micro object configured to induce a flow of charge through the rectifying device, wherein the device external to the micro object induces the flow of charge through the rectifying device using capacitive or magnetic coupling.
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