Semiconductor device and method of manufacturing the same
US-2017221800-A1 · Aug 3, 2017 · US
US10141245B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10141245-B2 |
| Application number | US-201715685850-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 24, 2017 |
| Priority date | Aug 24, 2016 |
| Publication date | Nov 27, 2018 |
| Grant date | Nov 27, 2018 |
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The present disclosure relates to a high-power acoustic device with improved performance. The disclosed acoustic device includes a substrate, a die-attach material, and an acoustic die. The substrate includes a substrate body and a die pad on a top surface of the substrate body. The die-attach material is a sintered material and applied over the die pad. The acoustic die is coupled to the die pad via the die-attach material. Herein, the acoustic die includes a die body and a metallization structure, which is sandwiched between the die body and the die-attach material.
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What is claimed is: 1. An apparatus comprising: a substrate comprising a substrate body and a die pad on a top surface of the substrate body; a die-attach material applied over the die pad, wherein the die-attach material is a sintered material; an acoustic die coupled to the die pad via the die-attach material, wherein: the acoustic die includes a plurality of acoustic components, a die body and a metallization structure; the plurality of acoustic components resides over a top surface of the die body and the metallization structure resides over a bottom surface of the die body; and the metallization structure is vertically sandwiched between the die body and the die-attach material. 2. The apparatus of claim 1 wherein the metallization structure provides adhesion to the die body, chemical bonding to the die-attach material, and a wetting function that provides an interface between the die body and die-attach material. 3. The apparatus of claim 2 wherein the metallization structure comprises: a first layer that is in contact with the die body and provides the adhesion to the die body; a second layer that is in contact with the die-attach material and provides the chemical bonding to the die-attach material; and a third layer that is sandwiched between the first layer and the second layer and provides the wetting function. 4. The apparatus of claim 3 wherein: the first layer is formed of Titanium (Ti), Titanium Tungsten (TiW), or Chromium (Cr); the second layer is formed of gold (Au) or silver (Ag); and the third layer is formed of TiW, Au, Nickel-Vanadium (NiV), or Nickel (Ni). 5. The apparatus of claim 2 wherein the metallization structure comprises: a first layer that is in contact with the die body and provides the adhesion to the die body and the wetting function; and a second layer that is sandwiched between the first layer and the die-attach material and provides the chemical bonding to the die-attach material. 6. The apparatus of claim 2 wherein the metallization structure comprises: a first layer that is in contact with the die body and provides the adhesion to the die body; and a second layer sandwiched between the first layer and the die-attach material, wherein the second layer provides the chemical bonding to the die-attach material and the wetting function. 7. The apparatus of claim 2 wherein the metallization structure comprises: a first layer that is in contact with the die body and provides the adhesion to the die body and the wetting function; and a second layer sandwiched between the first layer and the die-attach material, wherein the second layer provides the chemical bonding to the die-attach material and the wetting function. 8. The apparatus of claim 2 wherein the metallization structure is formed of at least one of a group consisting of TiW, Ti, Cr, Ni, NiV, Ag, and Au. 9. The apparatus of claim 1 wherein the acoustic die further includes an enclosure coupled to the top surface of the die body to encapsulate the plurality of acoustic components, wherein the enclosure includes a cap and an outer wall extending from the cap to the top surface of the die body. 10. The apparatus of claim 9 wherein: the substrate further comprises a plurality of wire-contacts on the top surface of the substrate body and surrounding the die pad; and the acoustic die further comprises a plurality of wires, wherein each of the plurality of wires is outside the enclosure and extends from the top surface of the die body to a corresponding wire-contact on the top surface of the substrate body. 11. The apparatus of claim 1 wherein the substrate body is formed of one of a group consisting of FR-4, BT-NS, PTFE, Rogers RO4003, RO6035, and LCP. 12. The apparatus of claim 1 wherein the substrate body is formed of one of a group consisting of alumina, low temperature co-fired ceramic (LTCC), or high temperature co-fired ceramic (HTCC). 13. The apparatus of claim 1 wherein the substrate is a printed circuit board (PCB). 14. The apparatus of claim 1 wherein the die-attach material is one of a group consisting of sintered silver, sintered copper, and sintered gold. 15. The apparatus of claim 1 wherein the acoustic die is a bulk acoustic wave (BAW) die. 16. The apparatus of claim 1 wherein the acoustic die is a surface acoustic wave (SAW) die. 17. The apparatus of claim 1 wherein the substrate further comprises a heat spreader embedded in the substrate body, wherein the heat spreader is thermally coupled to the die pad and extends from the top surface of the substrate body to a bottom surface of the substrate body. 18. The apparatus of claim 1 wherein the substrate further includes a plurality of thermal vias, wherein each of the plurality of thermal vias is thermally coupled to the die pad and extends from the top surface of the substrate body to a bottom surface of the substrate body. 19. The apparatus of claim 1 further comprising a molding compound formed over the substrate to encapsulate the acoustic die.
comprising aluminium [Al] · CPC title
comprising gold [Au] · CPC title
Encapsulations, e.g. protective coatings · CPC title
Die-attach connectors and bond wires · CPC title
between a chip and a stacked insulating package substrate, interposer or RDL · CPC title
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