Anhydride copolymer top coats for orientation control of thin film block copolymers

Patent metadata

Field	Value
Publication number	US-10139724-B2
Application number	US-201514839147-A
Country	US
Kind code	B2
Filing date	Aug 28, 2015
Priority date	Feb 10, 2012
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

The concepts described herein involve the use of random copolymer top coats that can be spin coated onto block copolymer thin films and used to control the interfacial energy of the top coat-block copolymer interface. The top coats are soluble in aqueous weak base and can change surface energy once they are deposited onto the block copolymer thin film. The use of self-assembled block copolymers to produce advanced lithographic patterns relies on their orientation control in thin films. Top coats potentially allow for the facile orientation control of block copolymers which would otherwise be quite challenging.

First claim

The invention claimed is:

1. A layered structure comprising first, second and third layers on a surface, wherein said first layer comprises a crosslinked polymer, wherein said second layer comprises a block copolymer film, and wherein said third layer comprises a random copolymer comprising at least one maleic anhydride unit, wherein said second layer block copolymer are selected from the group consisting of poly(styrene-block-dimethyl siloxane), pTBDMSO-Sty, pMTMSMA, pTMSS-Sty, and pMTMSMA-Sty, wherein pTBDMSO-Sty is

pMTMSMA is

pTMSS-Sty is

and pMTMSMA-Sty is

wherein said third layer comprises

wherein R 1 is selected from the group consisting of H, F, CF 3 , and C(CH 3 ) 3 , R 2 is selected from the group consisting of H, Me, SiMe 3 , CF 3 , and C(CH 3 ) 3 , R 3 is selected from the group consisting of H, CF 3 , and C(CH 3 ) 3 , R 4 is selected from the group consisting of H, F, CF 3 , and C(CH 3 ) 3 , R 5 is selected from the group consisting of H, Me, SiMe 3 , CF 3 , and C(CH 3 ) 3 , R 6 is selected from the group consisting of H, CF 3 , and C(CH 3 ) 3 .

2. The layered structure of claim 1 , wherein said surface comprises silicon.

3. The layered structure of claim 1 , wherein said surface comprises a silicon wafer.

4. A layered structure comprising first, second and third layers on a surface, wherein said first layer comprises a crosslinked polymer, wherein said second layer comprises a block copolymer film, and wherein said third layer comprises a random copolymer comprising at least one maleic anhydride unit, wherein said second layer block copolymer are selected from the group consisting of poly(styrene-block-dimethyl siloxane), pTBDMSO-Sty, pMTMSMA, pTMSS-Sty, and pMTMSMA-Sty, wherein pTBDMSO-Sty is

pMTMSMA is

pTMSS-Sty is

and pMTMSMA-Sty is

wherein said third layer comprises a polymer layer made from the polymer components including

with at least one of the following additional polymer components selected from the group consisting of:

5. The layered structure of claim 4 , wherein said surface comprises silicon.

6. The layered structure of claim 4 , wherein said surface comprises a silicon wafer.

7. A layered structure comprising first, second and third layers on a surface, wherein said first layer comprises a maleic anhydride based substrate neutralization layer, wherein said second layer comprises a block copolymer film, and wherein said third layer comprises a maleic anhydride unit, wherein said second layer block copolymers are selected from the group consisting of poly(styrene-block-dimethyl siloxane), pTBDMSO-Sty, pMTMSMA, pTMSS-Sty, and pMTMSMA-Sty, wherein pTBDMSO-Sty is

pMTMSMA is

pTMSS-Sty is

and pMTMSMA-Sty is

wherein said maleic anhydride based substrate neutralization layer comprises

wherein R 1 is selected from the group consisting of H, F, CF 3 , and C(CH 3 ) 3 , R 2 is selected from the group consisting of H, Me, SiMe 3 , CF 3 , and C(CH 3 ) 3 , R 3 is selected from the group consisting of H, CF 3 , and C(CH 3 ) 3 , R 4 is selected from the group consisting of H, F, CF 3 , and C(CH 3 ) 3 , R 5 is selected from the group consisting of H, Me, SiMe 3 , CF 3 , and C(CH 3 ) 3 , R 6 is selected from the group consisting of H, CF 3 , and C(CH 3 ) 3 .

8. The layered structure of claim 7 , wherein said surface comprises silicon.

9. A layered structure comprising first, second and third layers on a surface, wherein said first layer comprises a maleic anhydride based substrate neutralization layer, wherein said second layer comprises a block copolymer film, and wherein said third layer comprises a maleic anhydride unit, wherein said second layer block copolymers are selected from the group consisting of poly(styrene-block-dimethyl siloxane), pTBDMSO-Sty, pMTMSMA, pTMSS-Sty, and pMTMSMA-Sty, wherein pTBDMSO-Sty is

pMTMSMA is

pTMSS-Sty is

and pMTMSMA-Sty is

wherein said maleic anhydride based substrate neutralization layer comprises a polymer layer made from the polymer components including

with at least one of the following additional polymer components selected from the group consisting of:

10. The layered structure of claim 9 , wherein said surface comprises silicon.

Assignees

• Univ Texas

Inventors

• Willson C Grant
• Ellison Christopher John
• Sleshimo Takehiro
• Cushen Julia
• Bates Christopher M
• Dean Leon
• Santos Logan J
• Rausch Erica L

Classifications

• B05D7/56

  Three layers or more · CPC title

• G03F7/0002

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title

• B05D5/00

  Processes for applying liquids or other fluent materials to surfaces to obtain special surface effects, finishes or structures · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title