Solid-state image pickup element and image pickup system

Patent metadata

Field	Value
Publication number	US-10136091-B2
Application number	US-201514809753-A
Country	US
Kind code	B2
Filing date	Jul 27, 2015
Priority date	Jul 31, 2014
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

First claim

What is claimed is:

1. A solid-state image pickup element including a plurality of pixels that are arranged in a two-dimensional manner, each of the plurality of pixels comprising:
a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed on the photoelectric conversion layer;
an amplification transistor in a substrate;
a capacitor having a first wiring, a second wiring disposed facing the first wiring, and an insulating layer disposed between the first wiring and the second wiring, and
a plurality of wiring layers including the first wiring and the second wiring, wherein the plurality of wiring layers are disposed between the plurality of photoelectric conversion units and the substrate
wherein each of the plurality of photoelectric conversion units has a first photoelectric conversion unit and a second photoelectric conversion unit,
wherein light collected by one microlens enters the first photoelectric conversion unit and the second photoelectric conversion unit,
wherein the first wiring is electrically connected to a gate of the amplification transistor,
wherein the second wiring is electrically connected to a bias voltage, and
wherein in the plurality of wiring layers, another wiring layer is disposed between the substrate and both of the first wiring and the second wiring.

2. The solid-state image pickup element according to claim 1 , wherein the plurality of photoelectric conversion units included in each of the plurality of pixels shares one of the pixel electrode and the counter electrode.

3. The solid-state image pickup element according to claim 1 , wherein the plurality of photoelectric conversion units included in each of the plurality of pixels shares the photoelectric conversion layer.

4. The solid-state image pickup element according to claim 1 , wherein the plurality of photoelectric conversion units included in each of the plurality of pixels includes at least one photoelectric conversion layer separating unit including at least one of a light shielding member and an insulating member, the at least one photoelectric conversion layer separating unit being disposed between the photoelectric conversion layers.

5. The solid-state image pickup element according to claim 1 , wherein a light shielding film is disposed on the counter electrode and between two adjacent pixels among the plurality of pixels.

6. The solid-state image pickup element according to claim 5 , wherein a protective film is disposed on the light shielding film.

7. The solid-state image pickup element according to claim 1 , wherein the photoelectric conversion layer is composed of any of an intrinsic hydrogenated amorphous silicon, a compound semiconductor, and an organic semiconductor.

8. The solid-state image pickup element according to claim 1 , wherein the counter electrodes included in the photoelectric conversion units included in the plurality of pixels are supplied with signals through different wiring lines.

9. The solid-state image pickup element according to claim 1 ,
wherein each of the plurality of pixels further comprises a signal reading circuit, and
wherein the signal reading circuit includes the capacitor that includes one node connected to the pixel electrode.

10. The solid-state image pickup element according to claim 9 , further including a pixel electrode controller configured to control a potential of the pixel electrode via the capacitor.

11. The solid-state image pickup element according to claim 1 , wherein each of the plurality of pixels further comprises a photoelectric conversion unit disposed between the plurality of photoelectric conversion units and the microlens.

12. The solid-state image pickup element according to claim 1 , wherein an output node of the first photoelectric conversion unit and an output node of the second photoelectric conversion unit are connected to one and same input node of the amplification transistor.

13. The solid-state image pickup element according to claim 1 ,
wherein a signal for phase difference detection is read from the plurality of photoelectric conversion units, and
wherein a signal for image pickup is read from the first photoelectric conversion unit and the second photoelectric conversion unit.

14. The solid-state image pickup element according to claim 13 , wherein the signal for phase difference detection and the signal for image pickup are read from the same circuit.

15. A solid-state image pickup element including a plurality of pixels that are arranged in a two-dimensional manner, each of the plurality of pixels comprising:
a photoelectric conversion unit including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed on the photoelectric conversion layer;
one microlens disposed on the photoelectric conversion unit;
an amplification transistor in a substrate;
a capacitor having a first wiring, a second wiring disposed facing the first wiring, and an insulating layer disposed between the first wiring and the second wiring, and
a plurality of wiring layers including the first wiring and the second wiring, wherein the plurality of wiring layers are disposed between the plurality of photoelectric conversion units and the substrate
wherein at least one of the pixel electrode and the counter electrode included in each of the plurality of pixels includes a plurality of partial electrodes that are controllable independently of one another,
wherein each of the plurality of partial electrodes have a first partial electrode and a second partial electrode,
wherein the one microlens overlaps both the first partial electrode and the second partial electrode in planar view,
wherein the first wiring is electrically connected to a gate of the amplification transistor,
wherein the second wiring is electrically connected to a bias voltage, and
wherein in the plurality of wiring layers, another wiring layer is disposed between the substrate and both of the first wiring and the second wiring.

16. The solid-state image pickup element according to claim 15 , wherein the pixel electrode includes the plurality of partial electrodes.

17. The solid-state image pickup element according to claim 15 , wherein the counter electrode includes the plurality of partial electrodes.

18. The solid-state image pickup element according to claim 15 , wherein an output node of the first partial electrode and an output node of the second partial electrode are connected to one and same input node of the amplification transistor.

19. The solid-state image pickup element according to claim 15 ,
wherein a signal for phase difference detection is read from the plurality of partial electrodes, and
wherein an image pickup signal is read from the first partial electrode and the second partial electrode.

20. The solid-state image pickup element according to claim 19 , wherein the signal for phase difference detection and the signal for image pickup signal are read from the same circuit.

21. An image pickup system comprising:
the solid-state image pickup element according to claim 1 ;
an optical system configured to form an image on the plurality of pixels; and
a signal processor configured to process a signal for phase difference detection to generate phase difference data and configured to process the signal for image pickup to generate image data.

22. An im

Assignees

• Canon Kk

Inventors

• Ono Toshiaki
• Itahashi Masatsugu
• Inatani Naoki
• Maehashi Yu
• Takahashi Hidekazu

Classifications

• H04N25/77 Primary

  Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components · CPC title

• H04N5/3745 Primary

  Electricity · mapped topic

• H04N5/2173

  Electricity · mapped topic

• H01L27/14667

  Electricity · mapped topic

• H04N25/62

  Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels · CPC title