Compound semiconductor and application thereof

Patent metadata

Field	Value
Publication number	US-10134970-B2
Application number	US-201415039020-A
Country	US
Kind code	B2
Filing date	Nov 28, 2014
Priority date	Nov 29, 2013
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

In the present disclosure, disclosed are a novel compound semiconductor which can be used as a thermoelectric material or the like, and applications thereof. A compound semiconductor according to the present disclosure can be represented by the following chemical formula 1: <Chemical formula 1>[Bi 1-x M x Cu u-w T w O a-y Q1 y Te b Se z ]A c , where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0≤x<1, 0.5≤u≤1.5, 0≤w≤1, 0.2<a<1.5, 0≤y<1.5, 0≤b<1.5, 0≤z<1.5 and 0<c<0.2.

First claim

What is claimed is:

1. A compound semiconductor represented by the following chemical formula 1:
[Bi 1-x M x Cu u-w T w O a-y Q1 y Te b Se z ]A c   <Chemical formula 1>

where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0≤x<1, 0.5≤u≤1.5, 0≤w≤1, 0.2<a<1.5, 0≤y<1.5, 0≤b<1.5, 0≤z<1.5 and 0<c<0.2,
wherein A is one or more elements selected from the group consisting of Ag, Co, Ni, Zn, Au, Pd, Pt, Ag 2 Te, CuTe, Cu 2 Se, Bi 2 Te 3 and CuAgSe.

2. The compound semiconductor of claim 1 , wherein c in the chemical formula 1 satisfies 0<c<0.05.

3. The compound semiconductor of claim 1 , wherein x, y and z in the chemical formula 1 respectively satisfy x=0, y=0 and z=0.

4. The compound semiconductor of claim 1 , wherein w, y, b and z in the chemical formula 1 respectively satisfy w=0, y=0, b=0 and z=1.

5. The compound semiconductor of claim 1 , wherein the chemical formula 1 is represented by [Bi 1-x M x CuOSe]A c .

6. A compound semiconductor in which A particles are distributed randomly in a compound represented by Bi 1-x M x Cu u-w T w O a-y Q1 y Te b Se z ,
wherein M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; and 0≤x<1, 0.5≤u≤1.5, 0≤w≤1, 0.2<a<1.5, 0≤y<1.5, 0≤b<1.5 and 0≤z<1.5,
wherein A is one or more elements selected from the group consisting of Ag, Co, Ni, Zn, Au, Pd, Pt, Ag 2 Te, CuTe, Cu 2 Se, Bi 2 Te 3 and CuAgSe.

7. A thermoelectric conversion device comprising a compound semiconductor according to claim 1 .

8. The thermoelectric conversion device of claim 7 , comprising a compound semiconductor according to claim 1 as a p-type thermoelectric conversion material.

9. A solar cell comprising a compound semiconductor, the compound semiconductor represented by the following chemical formula 1:
[Bi 1-x M x Cu u-w T w O a-y Q1 y Te b Se z ]A c   <Chemical formula 1>

where, in the chemical formula 1, M is one or more elements selected from the group consisting of Ba, Sr, Ca, Mg, Cs, K, Na, Cd, Hg, Sn, Pb, Mn, Ga, In, Tl, As and Sb; Q1 is one or more elements selected from the group consisting of S, Se, As and Sb; T is one or more elements selected from transition metal elements; A is one or more elements selected from the group consisting of transition metal elements and compounds of transition metal elements and group VI elements; and 0≤x<1, 0.5≤u≤1.5, 0≤w≤1, 0.2<a<1.5, 0≤y<1.5, 0≤b<1.5, 0≤z<1.5 and 0<c<0.2.

10. A bulk thermoelectric material comprising a compound semiconductor according to claim 1 .

Assignees

• Lg Chemical Ltd

Inventors

• Kwon O-Jong
• Kim Tae-Hoon
• Park Cheol-Hee
• Ko Kyung-Moon

Classifications

• C01P2004/60

  Particles characterised by their size · CPC title

• H01L35/18 Primary

  Electricity · mapped topic

• H01L31/032

  Electricity · mapped topic

• H01L35/16

  Electricity · mapped topic

• C01P2006/40

  Electric properties · CPC title