Semiconductor layering sequence for generating visible light and light emitting diode

Patent metadata

Field	Value
Publication number	US-10134960-B2
Application number	US-201515533006-A
Country	US
Kind code	B2
Filing date	Dec 3, 2015
Priority date	Dec 5, 2014
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

In at least one embodiment, the semiconductor layering sequence ( 1 ) is designed for generating light and comprises semiconductor columns ( 2 ). The semiconductor columns ( 2 ) have a respective core ( 21 ) made of a semiconductor material of a first conductivity type, and a core shell ( 23 ) surrounding the core ( 21 ) made of a semiconductor material of a second conductivity type. There is an active zone ( 22 ) between the core ( 21 ) and the core shell ( 23 ) for generating a primary radiation by means of electroluminescence. A respective conversion shell ( 4 ) is placed onto the semiconductor columns ( 2 ), which conversion shell at least partially interlockingly surrounds the corresponding core shell ( 23 ), and which at least partially absorbs the primary radiation and converts same into a secondary radiation of a longer wavelength by means of photoluminescence. The conversion shells ( 4 ) which are applied to adjacent semiconductor columns ( 2 ), only incompletely fill an intermediate space between the semiconductor columns ( 2 ).

First claim

The invention claimed is:

1. A semiconductor layer sequence for generating visible light with a multiplicity of semiconductor columns, wherein
the semiconductor columns each comprise a core of a semiconductor material of a first conductivity type and a core shell around the core of a semiconductor material of second conductivity type,
an active zone of the semiconductor columns is located between the core and the core shell for generating primary radiation by means of electroluminescence,
the semiconductor material of the first conductivity type is n-doped and the semiconductor material of the second conductivity type is p-doped and the core, the active zone and the core shell are based on the same semiconductor material,
a conversion shell is applied onto each of the semiconductor columns, the conversion shell surrounding the associated core shell at least partially form-fittingly and at least partially absorbing the primary radiation and converting it into secondary radiation of a longer wavelength by way of photoluminescence,
the conversion shell is applied directly onto the core shell and the core shell has a constant layer thickness,
the conversion shells, which are applied to adjacent semiconductor columns, only incompletely fill an interspace between these semiconductor columns, such that no continuous, rectilinear connection is produced between adjacent semiconductor columns solely by way of the conversion shells,
the conversion shells each have a constant thickness, with a tolerance of at most 20% of an average thickness of the conversion shells, and
when in proper use, the conversion shell is the only photoluminescent component and a light-emitting diode associated with the semiconductor layer sequence emits white light when in proper use.

2. The semiconductor layer sequence according to claim 1 , wherein
the semiconductor material of the first conductivity type and the semiconductor material of the second conductivity type as well as the active zone are based on AlInGaN,
the semiconductor columns are grown on a contiguous base layer, which is based on AlInGaN, such that foot points of the semiconductor columns each emerge from the base layer, and
the conversion shell is free of organic materials and is applied to the semiconductor columns form-fittingly at least on each of tips, opposite the foot points, and on lateral surfaces which connect the tips to the foot points.

3. The semiconductor layer sequence according to claim 2 , wherein the conversion shell connects together the foot points of adjacent semiconductor columns and is formed as a continuous layer, wherein the conversion shell is U-shaped when viewed in cross-section, wherein the semiconductor columns are of rectangular shape, wherein the foot points are in direct contact with the base layer only at openings in a mask layer and, between the semiconductor columns, the conversion shell is separated from the base layer by the mask layer.

4. The semiconductor layer sequence according to claim 1 , wherein
the average thickness of the conversion shell is between 2 nm and 500 nm inclusive,
an average column diameter of the semiconductor columns is between 0.1 μm and 5 μm inclusive,
an average column height of the semiconductor columns amounts to between 0.5 μm and 50 μm inclusive,
a quotient of the column height and the column diameter is at least 2.5 and at most 100, and
an average distance between adjacent semiconductor columns amounts to between 0.5 μm and 10 μm inclusive.

5. The semiconductor layer sequence according to claim 1 , wherein the conversion shell for converting the primary radiation consists of a layer of a III-V semiconductor material or of a II-VI semiconductor material, and wherein this semiconductor material is doped or is provided with defects with a dopant concentration of between 1×10 18 l/cm 3 and 1×10 22 l/cm 3 inclusive.

6. The semiconductor layer sequence according to claim 1 , wherein the conversion shell for converting the primary radiation comprises at least one of a layer of an organic semiconductor material, of a doped transparent conductive oxide, and of a doped dielectric material.

7. The semiconductor layer sequence according to claim 1 , wherein an interlayer is located between the core shell and the conversion shell, wherein the interlayer directly adjoins the core shell and the conversion shell, and wherein the interlayer is electrically conductive and transmissive to the primary radiation and is formed from a transparent conductive oxide.

8. The semiconductor layer sequence according to claim 1 , wherein an interlayer is located between the core shell and the conversion shell, and wherein the interlayer is electrically insulating and transmissive to the primary radiation and is formed from a dielectric material.

9. The semiconductor layer sequence according to claim 1 , wherein all the semiconductor columns or groups of a plurality of semiconductor columns are electrically connected in parallel.

10. The semiconductor layer sequence according to claim 1 , wherein the conversion shell comprises on each of the semiconductor columns a plurality of three-dimensional conversion structures or consists of such three-dimensional conversion structures.

11. A light-emitting diode with
at least one semiconductor layer sequence for generating visible light with a multiplicity of semiconductor columns, wherein
the semiconductor columns each comprise a core of a semiconductor material of a first conductivity type and a core shell around the core of a semiconductor material of second conductivity type,
an active zone of the semiconductor columns is located between the core and the core shell for generating primary radiation by means of electroluminescence,
a conversion shell is applied onto each of the semiconductor columns, the conversion shell surrounding the associated core shell at least partially form-fittingly and at least partially absorbing the primary radiation and converting it into secondary radiation of a longer wavelength by way of photoluminescence,
the conversion shells, which are applied to adjacent semiconductor columns, only incompletely fill an interspace between these semiconductor columns, such that no continuous, rectilinear connection is produced between adjacent semiconductor columns solely by way of the conversion shells,
the conversion shells each have a constant thickness, with a tolerance of at most 20% of an average thickness of the conversion shells; and

at least two electrical terminals to feed current to the semiconductor layer sequence, wherein
the light-emitting diode can be handled as a self-contained electronic component,
at least one further luminescent material for at least partial conversion of the primary radiation and the secondary radiation into longer-wavelength tertiary radiation by means of photoluminescence is arranged downstream of the semiconductor layer sequence,
an average distance between the further luminescent material and the semiconductor columns amounts to at least 1 μm and at least one organic bonding agent is located between the luminescent material and the semiconductor columns.

12. The light-emitting diode according to claim 11 , wherein, when in proper use, the conversion shell is the only photoluminescent component, and wherein the light-emitting diode emits white light when in proper use.

13. A semiconductor layer sequence for generating visible light with a multiplicity of semiconductor columns, wherein
the semiconductor columns each comprise a core of a semiconductor material of a first conductivity type and a core shell around the core of a semiconductor material of second co

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Scholz Dominik
• Mandl Martin
• Stoll Ion
• Strassburg Martin
• Huckenbeck Barbara

Classifications

• H01L33/24

  Electricity · mapped topic

• H01L33/505 Primary

  Electricity · mapped topic

• H01L2933/0041

  Electricity · mapped topic

• H01L33/16

  Electricity · mapped topic

• H01L33/508

  Electricity · mapped topic