Light emitting diode with polarization control

Patent metadata

Field	Value
Publication number	US-10134948-B2
Application number	US-201213404703-A
Country	US
Kind code	B2
Filing date	Feb 24, 2012
Priority date	Feb 25, 2011
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

An improved light emitting heterostructure is provided. The heterostructure includes an active region having a set of barrier layers and a set of quantum wells, each of which is adjoined by a barrier layer. The quantum wells have a delta doped p-type sub-layer located therein, which results in a change of the band structure of the quantum well. The change can reduce the effects of polarization in the quantum wells, which can provide improved light emission from the active region.

First claim

What is claimed is:

1. A nitride-based light emitting heterostructure comprising:
an electron supply layer;
a hole supply layer; and
an active region located between the electron supply layer and the hole supply layer, the active region including:
a set of barrier layers having strain-induced polarization fields of a first sign; and
a set of quantum wells having strain-induced polarization fields of a second sign opposite the first sign, each quantum well adjoined by a barrier layer in the set of barrier layers, wherein each quantum well has a delta doped p-type sub-layer located in a central portion thereof, wherein the delta doped p-type sub-layer causes an electron ground state in each quantum well to be located above a band bending range of energies caused by polarization effects.

2. The heterostructure of claim 1 , wherein each quantum well further has a thickness less than a characteristic radius of a defect responsible for nonradiative recombination for the nitride-based light emitting heterostructure.

3. The heterostructure of claim 1 , wherein the active region has wurtzite crystal symmetry.

4. The heterostructure of claim 1 , further comprising an electron blocking layer located between the active region and the hole supply layer, wherein the electron blocking layer comprises a graded composition including a plurality of sub-layers forming a first side of a potential well within which the active region is located, and wherein adjacent sub-layers in the plurality of sub-layers have strains of opposite signs.

5. The heterostructure of claim 1 , further comprising an electron supply barrier layer located between the active region and the electron supply layer, wherein the electron supply barrier layer has a graded composition forming a first side of a potential well within which the active region is located.

6. The heterostructure of claim 5 , wherein the electron supply barrier layer creates a band structure profile such that electrons entering the active region have energies approximately the same as an energy of a polar optical phonon.

7. The heterostructure of claim 1 , wherein the hole supply layer comprises a p-type cladding layer including:
a second set of quantum wells; and
a second set of barriers, wherein a band discontinuity between a quantum well in the second set of quantum wells and an adjacent barrier in the second set of barriers coincides with an activation energy of a dopant in the quantum well in the second set of quantum wells.

8. A light emitting heterostructure comprising:
a set of large band gap layers having strain-induced polarization fields of a first sign; and
a set of small band gap layers having strain-induced polarization fields of a second sign opposite the first sign, each small band gap layer adjoined by at least one large band gap layer, wherein each small band gap layer has a delta doped p-type sub-layer located in a central portion thereof, wherein each small band gap layer has a band gap smaller than a band gap of each of the at least one adjoining large band gap layer, wherein the delta doped p-type sub-layer causes an electron ground state in each small band gap layer to be located above a band bending range of energies caused by polarization effects.

9. The heterostructure of claim 8 , wherein the set of large band gap layers and the set of small band gap layers form an active region for the heterostructure, the heterostructure further comprising:
a hole supply layer; and
an electron blocking layer located between the active region and the hole supply layer, wherein the electron blocking layer comprises a graded composition including a plurality of sub-layers forming a first side of a potential well within which the active region is located, and wherein adjacent sub-layers in the plurality of sub-layers have strains of opposite signs.

10. The heterostructure of claim 8 , wherein the set of large band gap layers and the set of small band gap layers are each formed of group III nitride based materials.

11. The heterostructure of claim 10 , wherein each small band gap layer further has a thickness less than a characteristic radius of a defect responsible for nonradiative recombination.

12. The heterostructure of claim 8 , wherein the set of large band gap layers are undoped.

13. The heterostructure of claim 8 , wherein a thickness of each small band gap layer is such that an electron ground state of each small band gap layer is a higher energy than a bottom of a conduction band in the small band gap layer.

14. The heterostructure of claim 8 , wherein each large band gap layer comprises a graded composition.

15. The heterostructure of claim 1 , wherein the delta doped p-type sub-layer is an atomic layer.

16. The heterostructure of claim 1 , wherein the set of quantum wells are formed of aluminum gallium nitride.

Assignees

• Shur Michael
• Gaska Remigijus
• Sensor Electronic Tech Inc

Inventors

• Shur Michael
• Gaska Remigijus

Classifications

• H01L33/06 Primary

  Electricity · mapped topic

• H01S5/0422

  with n- and p-contacts on the same side of the active layer · CPC title

• H01L33/007

  Electricity · mapped topic

• H01S5/0224

  Electricity · mapped topic

• H01S5/3201

  incorporating bulkstrain effects, e.g. strain compensation, strain related to polarisation · CPC title