Method of forming redistribution layer

Patent metadata

Field	Value
Publication number	US-10134694-B2
Application number	US-201615160618-A
Country	US
Kind code	B2
Filing date	May 20, 2016
Priority date	Feb 13, 2014
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

A structure of an under bump metallization and a method of forming the same are provided. The under bump metallization has a redistribution via hole, viewed from the top, in a round shape or a polygon shape having an angle between adjacent edges greater than 90°. Therefore, the step coverage of the later formed metal layer can be improved.

First claim

What is claimed is:

1. A method of forming a redistribution layer, the method comprising:
forming a first passivation layer on a metal pad disposed on a substrate;
exposing the metal pad by forming a redistribution via hole in the first passivation layer, wherein the redistribution via hole has a polygon shape having an angle between adjacent edges greater than 90°, in a top view;
depositing a first metal layer in the redistribution via hole and on the first passivation layer; and
forming a redistribution layer by patterning the first metal layer, wherein a ratio of a thickness of the redistribution layer over the diameter of the redistribution via hole is about 1.4 to about 2.5.

2. The method of claim 1 , wherein the first passivation layer is made from silicon nitride, undoped silicate glass, polyimide, or any combinations thereof.

3. The method of claim 1 , wherein the redistribution layer comprises a composite metal layer.

4. The method of claim 1 , wherein the angle between adjacent edges of the polygon shape is at least 108°.

5. The method of claim 1 , wherein the angle between adjacent edges of the polygon shape is at least 135°.

6. The method of claim 1 , wherein forming the first passivation layer is performed by chemical vapor deposition, spin coating, or a combination thereof.

7. The method of claim 1 , wherein forming the redistribution via hole is performed by a photolithography process followed by an etching process.

8. The method of claim 1 , wherein depositing the first metal layer is performed by physical vapor deposition, chemical vapor deposition, or plating.

9. The method of claim 1 , further comprising forming an under bump metal layer over the redistribution layer.

10. The method of claim 9 , further comprising forming a second passivation layer between the redistribution layer and the under bump metal layer.

11. The method of claim 10 , wherein the second passivation layer has a terminal via exposing the redistribution layer and a portion of the under bump metal layer is disposed in the terminal via.

12. A method of forming a redistribution layer, the method comprising:
forming a first passivation layer on a metal pad disposed on a substrate;
exposing the metal pad by forming a redistribution via hole in the first passivation layer;
depositing a first metal layer in the redistribution via hole and on the first passivation layer, wherein the lowest portion of a top surface of the first metal layer is in a position higher than a top surface of the first passivation layer, and a portion of the first metal layer is in contact with the top surface of the first passivation layer; and
forming a redistribution layer by patterning the first metal layer, wherein a ratio of a thickness of the redistribution layer over a diameter of the redistribution via hole is at least 1.4.

13. The method of claim 12 , wherein the redistribution via hole has a polygon shape, an angle between adjacent edges of the polygon shape being at least 108°.

14. The method of claim 12 , further comprising forming an under bump metal layer over the redistribution layer.

15. The method of claim 14 , further comprising forming a second passivation layer between the redistribution layer and the under bump metal layer.

16. The method of claim 15 , wherein the second passivation layer has a terminal via exposing the redistribution layer and a portion of the under bump metal layer is disposed in the terminal via.

17. A method of forming a redistribution layer, the method comprising:
forming a first passivation layer on a metal pad disposed on a substrate;
exposing the metal pad by forming a redistribution via hole in the first passivation layer;
depositing a first metal layer in the redistribution via hole and on the first passivation layer; and
forming a redistribution layer by patterning the first metal layer, wherein a ratio of a thickness of the redistribution layer over the diameter of the redistribution via hole is about 1.4 to about 2.5, and no seams and overhangs are formed at the redistribution layer in the redistribution via hole.

18. The method of claim 17 , further comprising forming an under bump metal layer over the redistribution layer.

19. The method of claim 18 , further comprising forming a second passivation layer between the redistribution layer and the under bump metal layer.

20. The method of claim 19 , wherein the second passivation layer has a terminal via exposing the redistribution layer and a portion of the under bump metal layer is disposed in the terminal via.

Assignees

• Taiwan Semiconductor Mfg Co Ltd
• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Lee Chih-Fei
• Chang Fu-Cheng
• Jeng Chi-Cherng
• Chen Hsin-Chi
• Hwang Yuan-Ko

Classifications

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title

• H10W72/942

  relative to underlying supporting features, e.g. bond pads, RDLs or vias · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/9223

  with redistribution layers [RDL] · CPC title