Conductive structure, manufacturing method therefor, and electrode comprising conductive structure
US-2018046017-A1 · Feb 15, 2018 · US
US10133135B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10133135-B2 |
| Application number | US-201615547635-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 9, 2016 |
| Priority date | May 6, 2015 |
| Publication date | Nov 20, 2018 |
| Grant date | Nov 20, 2018 |
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The present specification relates to a liquid crystal display device.
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The invention claimed is: 1. A liquid crystal display device comprising: a substrate; a plurality of gate lines and a plurality of data lines provided to cross each other on the substrate; a plurality of pixel regions divided by the gate lines and the data lines; a thin film transistor provided on one side of each of the pixel regions, wherein, the thin film transistor includes a gate electrode connected to the gate line, a semiconductor layer provided on the gate electrode while being insulated with the gate electrode, a source electrode electrically connected to the data line, and a drain electrode electrically connected to a pixel electrode or a common electrode; a color filter layer provided on each of the pixel regions; the pixel electrode provided in each of the pixel regions and the common electrode provided corresponding to the pixel electrode; and a light reflection reducing layer provided on at least one surface of the gate electrode, the source electrode, the drain electrode, the gate line and the data line, wherein, in the light reflection reducing layer, the following Formula 1 satisfies a value of greater than or equal to 0.004 and less than or equal to 0.22: ( k × t ) λ [ Formula 1 ] wherein, in Formula 1, k means an extinction coefficient of the light reflection reducing layer, t means a thickness of the light reflection reducing layer, and λ means a wavelength of light. 2. The liquid crystal display device of claim 1 , wherein the light reflection reducing layer has a thickness of greater than or equal to 10 nm and less than or equal to 100 nm. 3. The liquid crystal display device of claim 1 , wherein the light reflection reducing layer has an extinction coefficient (k) of greater than or equal to 0.1 and less than or equal to 2 in light with a wavelength of 550 nm. 4. The liquid crystal display device of claim 1 , wherein the light reflection reducing layer has a refractive index (n) of greater than or equal to 2 and less than or equal to 3 in light with a wavelength of 550 nm. 5. The liquid crystal display device of claim 1 , wherein light reflectance of the electrode provided with the light reflection reducing layer is 50% or less. 6. The liquid crystal display device of claim 1 , wherein the light reflection reducing layer includes one or more types selected from the group consisting of metal oxides, metal nitrides and metal oxynitrides. 7. The liquid crystal display device of claim 6 , wherein the metal oxide, the metal nitride and the metal oxynitride are derived from one, two or more metals selected from the group consisting of Cu, Al, Mo, Ti, Ag, Ni, Mn, Au, Cr and Co. 8. The liquid crystal display device of claim 1 , wherein the pixel electrode and the common electrode each include a plurality of conductive lines, and the pixel electrode and the common electrode are provided in parallel to each other in the pixel region.
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