Semiconductor element having grooves which divide an electrode layer, and method of forming the grooves

Patent metadata

Field	Value
Publication number	US-10128305-B2
Application number	US-201615151865-A
Country	US
Kind code	B2
Filing date	May 11, 2016
Priority date	Jun 7, 2013
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

A semiconductor element is disclosed including a construction with electrode-dividing grooves, in which a dark current is smaller than in existing examples. A method of forming such grooves is also disclosed. In an embodiment, grooves, which electrically divide an electrode layer formed on the surface of a substrate, are formed with a V-shaped cross-sectional shape, groove side walls in the electrode layer, constituting the grooves, being sloping surfaces. An embodiment of the method of forming the grooves includes using a dicing blade having a blade distal end portion which is sharpened into a V-shape to cut a semiconductor wafer in which multiple patterns of semiconductor elements including an electrode layer on the surface of a substrate are formed, forming the grooves having a V-shaped cross-sectional shape which divide the electrode layer in each semiconductor element.

First claim

The invention claimed is:

1. A method of forming grooves in a semiconductor element having an electrode layer on a surface of a substrate, comprising:
dividing the electrode layer using a dicing blade, having a blade distal end portion sharpened into a V-shape, by cutting V-shaped grooves into the electrode layer and a substrate layer of a semiconductor wafer in which multiple patterns of semiconductor elements having the electrode layer on a surface of the substrate layer are formed; and
forming rectangular shaped grooves only in the substrate layer by cutting groove side walls of the rectangular shaped grooves from a bottom surface of the electrode layer to a flat groove bottom surface formed in the substrate while retaining the V-shaped grooves only in the electrode layer to divide the electrode layer of the semiconductor element.

2. A method of forming grooves in a semiconductor element, comprising:
using a first dicing blade, including a blade distal end portion sharpened into a V-shape, to cut a plurality of V-shaped grooves into an electrode layer and a substrate layer of a semiconductor wafer in which multiple patterns of semiconductor elements having the electrode layer on a surface of the substrate layer are formed; and
after the cutting with the first dicing blade has been performed, using a second dicing blade, including a blade distal end portion having a rectangular shape and width relatively narrower than a blade width of the first dicing blade, to increase a depth of the V-shaped grooves in a substrate and altering the V-shaped grooves in the substrate to have straight sidewalls from a bottom of the electrode layer to a flat groove bottom surface formed in the substrate by the second dicing blade, wherein corner portions of openings of the V-shaped grooves only in the electrode layer are chamfered.

3. The method of claim 1 , wherein multiple pixel electrodes for detecting radiation are formed by dividing the electrode layer by way of the grooves.

4. The method of claim 3 , wherein the semiconductor wafer is a CdTe-based compound semiconductor wafer.

5. The method of claim 2 , wherein multiple pixel electrodes for detecting radiation are formed by dividing the electrode layer by way of the grooves.

6. The method of claim 5 , wherein the semiconductor wafer is a CdTe-based compound semiconductor wafer.

Assignees

• Siemens Ag
• Siemens Healthcare Gmbh

Inventors

• Kaneku Sakari
• Shuto Yasuhiro
• Tachibana Akira

Classifications

• H01L31/0224

  Electricity · mapped topic

• H01L27/14696

  Electricity · mapped topic

• H01L27/14698 Primary

  Electricity · mapped topic

• H01L31/085

  Electricity · mapped topic

• H10F77/20

  Electrodes · CPC title