Solid-state imaging device, manufacturing method of solid-state imaging device, and electronic device

Patent metadata

Field	Value
Publication number	US-10128291-B2
Application number	US-201715610345-A
Country	US
Kind code	B2
Filing date	May 31, 2017
Priority date	Mar 2, 2011
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

The present technology relates to a solid-state imaging device, manufacturing method of a solid-state imaging device, and an electronic device, which can provide a solid-state imaging device having further improved features such as reduced optical color mixing and the like. Also, an electronic device using the solid-state imaging device thereof is provided. According to a solid-state imaging device having a substrate and multiple photoelectric converters that are formed on the substrate, an insulating film forms an embedded element separating unit. The element separating unit is configured of an insulating film having a fixed charge that is formed so as to coat the inner wall face of a groove portion, within the groove portion which is formed in the depth direction from the light input side of the substrate.

First claim

What is claimed is:

1. A solid-state imaging device comprising:
a semiconductor substrate;
a first photoelectric converter in the semiconductor substrate;
a second photoelectric converter adjacent to the first photoelectric converter in the semiconductor substrate;
a third photoelectric converter adjacent to the second photoelectric converter in the semiconductor substrate;
a first groove portion disposed between the first and second photoelectric converters, wherein the first groove portion extends in a depth direction in the semiconductor substrate, wherein the first groove portion includes a first portion of a first insulating film having a fixed charge and a first portion of a second insulating film, and wherein a first hollow portion is disposed within the first portion of the second insulating film; and
a second groove portion disposed between the second and third photoelectric converters, wherein the second groove portion extends in the depth direction in the semiconductor substrate, wherein the second groove portion includes a second portion of the first insulating film and a second portion of the second insulating film, and wherein a second hollow portion is disposed within the second portion of the second insulating film,
wherein,
the first insulating film extends from the first groove portion to the second groove portion along a light-incident side of the semiconductor substrate.

2. The solid-state imaging device according to claim 1 , wherein the first insulating film includes an oxide or nitride material including at least one of the elements of hafnium (Hf), aluminum (Al), zirconium (Zr), tantalum (Ta), titanium (Ti), Lanthanum (La), Praseodymium (Pr), Cerium (Ce), Neodymium (Nd), Promethium (Pm), Samarium (Sm), Europium (Eu), Gadolinium (Gd), Terbium (Tb), Dysprosium (Dy), Holmium (Ho), Thulium (Tm), Ytterbium (Yb), Lutetium (Lu), or Yttrium (Y).

3. The solid-state imaging device according to claim 1 , wherein the second insulating film includes silicon oxide.

4. The solid-state imaging device according to claim 1 , wherein the semiconductor substrate includes a first side that is a light-incident side and a second side opposite to the first side, and wherein a wiring layer is disposed at the second side of the semiconductor substrate.

5. The solid-state imaging device according to claim 4 , further comprising:
a light-blocking film disposed at the first side of the semiconductor substrate.

6. The solid-state imaging device according to claim 5 , further comprising:
a color filter disposed above the light-blocking film.

7. The solid-state imaging device according to claim 6 , further comprising:
an on-chip lens disposed above the color filter.

8. The solid-state imaging device according to claim 1 , wherein the second insulating film is configured to close off the first groove portion at an opening end of the first groove portion.

9. The solid-state imaging device according to claim 1 , further comprising:
a light-blocking film disposed above at least a portion of the first groove portion.

10. A solid-state imaging device comprising:
a semiconductor substrate;
a first photoelectric converter in the semiconductor substrate;
a second photoelectric converter adjacent to the first photoelectric converter in the semiconductor substrate;
a third photoelectric converter adjacent to the second photoelectric converter in the semiconductor substrate;
a first groove portion disposed between the first and second photoelectric converters, wherein the first groove portion extends in a depth direction in the semiconductor substrate, wherein the first groove portion includes a first portion of an aluminum oxide film and a first portion of a silicon oxide film, wherein a first hollow portion is disposed within the first portion of the silicon oxide film; and
a second groove portion disposed between the second and third photoelectric converters, wherein the second groove portion extends in the depth direction in the semiconductor substrate, wherein the second groove portion includes a second portion of the aluminum oxide film and a second portion of the silicon oxide film, and wherein a second hollow portion is disposed within the second portion of the silicon oxide film,
wherein,
the aluminum oxide film extends from the first groove portion to the second groove portion along a light-incident side of the semiconductor substrate.

11. The solid-state imaging device according to claim 10 , wherein the semiconductor substrate includes a first side that is a light-incident side and a second side opposite to the first side, and wherein a wiring layer is disposed at the second side of the semiconductor substrate.

12. The solid-state imaging device according to claim 11 , further comprising:
a light-blocking film disposed at the first side of the semiconductor substrate.

13. The solid-state imaging device according to claim 10 , further comprising:
an on-chip lens disposed above the first side of the semiconductor substrate.

14. The solid-state imaging device according to claim 10 , wherein the silicon oxide film is configured to close off the first groove portion at an opening end of the first groove portion.

15. The solid-state imaging device according to claim 10 , further comprising:
a light-blocking film disposed above at least a portion of the first groove portion.

16. A solid-state imaging device comprising:
a semiconductor substrate;
a first photoelectric converter in the semiconductor substrate;
a second photoelectric converter adjacent to the first photoelectric converter in the semiconductor substrate;
a third photoelectric converter adjacent to the second photoelectric converter in the semiconductor substrate;
a first groove portion disposed between the first and second photoelectric converters, wherein the first groove portion extends in a depth direction in the semiconductor substrate, and wherein the first groove portion includes a first portion of an aluminum oxide film, a first portion of a tantalum oxide film, and a first portion of a silicon oxide film; and
a second groove portion disposed between the second and third photoelectric converters, wherein the second groove portion extends in the depth direction in the semiconductor substrate, and wherein the second groove portion includes a second portion of the aluminum oxide film, a second portion of the tantalum oxide film and a second portion of the silicon oxide film,
wherein,
the aluminum oxide film, the tantalum oxide film and the silicon oxide film extends from the first groove portion to the second groove portion along a light-incident side of the semiconductor substrate.

17. The solid-state imaging device according to claim 16 , wherein the semiconductor substrate includes a first side that is a light-incident side and a second side opposite to the first side, and wherein a wiring layer is disposed at the second side of the semiconductor substrate.

18. The solid-state imaging device according to claim 16 , further comprising:
an on-chip lens disposed above the first side of the semiconductor substrate.

19. The solid-state imaging device according to claim 16 , wherein the silicon oxide film is configured to close off the first groove portion at an opening end of the first groove portion.

20. The solid-state imaging device according to claim 16 , further comprising:
a light-blocking film disposed above at least a portion of the first groove portion.

Assignees

• Sony Corp

Inventors

• Yanagita Takeshi
• Oshiyama Itaru
• Enomoto Takayuki
• Ikeda Harumi
• Izawa Shinichiro
• Yamamoto Atsuhiko
• Ota Kazunobu

Classifications

• H01L27/14627

  Electricity · mapped topic

• H01L27/1463 Primary

  Electricity · mapped topic

• H01L27/14643

  Electricity · mapped topic

• H01L27/14614

  Electricity · mapped topic

• H01L27/14623

  Electricity · mapped topic